APT85GR120JD60_B.pdf

APT85GR120JD60
APT85GR120JD60
1200V, 85A, Vce(on) = 2.5V Typical
Ultra Fast NPT - IGBT®
E
E
The Ultra Fast NPT - IGBT® family of products is the newest generation of planar
IGBTs optimized for outstanding ruggedness and the best trade-off between
conduction and switching losses.
C
G
Features
• Low Saturation Voltage
• Low Tail Current
file # E145592
ISOTOP
®
• High Frequency Switching • RoHS Compliant
27
"UL Recognized"
• Short Circuit Withstand Rated SO
2
T-
Combi (IGBT and Diode)
• Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and
uninterruptible power supplies (UPS).
MAXIMUM RATINGS Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Ratings
Vces
Collector Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
118
I C2
Continuous Collector Current @ TC = 75°C
85
I CM
Pulsed Collector Current
340
SCWT
PD
TJ,TSTG
TL
1
Unit
V
A
Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C
10
μs
Total Power Dissipation @ TC = 25°C
595
W
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Min
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
1200
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
Typ
Max
5.0
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 25°C)
2.5
3.2
Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 125°C)
3.3
Collector-Emitter On Voltage (VGE = 15V, I C = 170A, Tj = 25°C)
3.5
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
20
(VCE = VGE, I C = 2.5mA, Tj = 25°C)
3.5
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
I GES
2
Unit
Volts
1100
µA
±250
nA
200
Gate-Emitter Leakage Current (VGE = ±20V)
Microsemi Website - http://www.microsemi.com
052-6404
Rev B 3-2013
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate to Emitter Plateau Voltage
Qg
Total Gate Charge
3
Qge
Gate-Emitter Charge
Qgc
Gate- Collector Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
APT85GR120JD60
Min
Typ
Capacitance
8400
VGE = 0V, VCE = 25V
725
f = 1MHz
190
V
490
660
60
85
IC = 85A
230
320
VGE = 15V
VCE= 600V
Inductive Switching (25°C)
43
Current Rise Time
VCC = 600V
70
Turn-Off Delay Time
VGE = 15V
300
nC
ns
85
IC = 85A
Turn-On Switching Energy
RG = 4.3 Ω
6000
9000
Eoff 6
Turn-Off Switching Energy
TJ = +25°C
3800
5700
td(on)
Turn-On Delay Time
Eon2
5
tr
td(off)
tf
Eon2
4
Inductive Switching (125°C)
43
Current Rise Time
VCC = 600V
70
Turn-Off Delay Time
VGE = 15V
350
Current Fall Time
Unit
pF
7.5
Gate Charge
Current Fall Time
Max
µJ
ns
95
IC = 85A
5
Turn-On Switching Energy
RG = 4.3 Ω
Eoff 6
Turn-Off Switching Energy
TJ = +125°C
4
7800
11,700
4900
7350
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
RθJC
Junction to Case Thermal Resistance (IGBT)
-
-
0.21
RθJC
Junction to Case Thermal Resistance (Diode)
-
-
0.56
WT
Package Weight
-
1.03
-
oz
-
-
10
in·lbf
-
-
1.1
N·m
2500
-
-
Volts
Torque
Terminals and Mounting Screws.
VIsolation
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
°C/W
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6404
D = 0.9
0.20
0.7
0.15
0.5
Note:
0.10
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
Rev B 3-2013
0.25
0.3
t2
0.05
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.1
0
0.05
10-5
t1
SINGLE PULSE
10-4
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
TYPICAL PERFORMANCE CURVES
APT85GR120JD60
60
200
IC, COLLECTOR CURRENT (A)
40
30
20
10
0
100
120
140
160
IC(A)
FIGURE 2, Max Frequency vs Current (Tcase = 75°C)
300
15V 13V
60
10V
200
9.0V
150
8.0V
100
7.5V
50
7V
0
6.5V
0
4
8
12
16
250
200
150
100
TJ= 150°C
50
80
0
40
20
0
0
1
2
3
4
5
6
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Saturation Voltage Characteristics
1
2 3
4 5
6
7 8
9 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6, Transfer Characteristics
6
5
4
IC = 85A
3
2
IC = 42.5A
1
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
-50
-25
0
25
50 75
100 125
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
6
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
4
IC = 170A
3
IC = 85A
IC = 42.5A
2
1
6
140
1.15
1.10
1.05
1.00
0.95
0.90
0.85
IC = 170A
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage
160
IC, DC COLLECTOR CURRENT (A)
CES
, BREAKDOWN VOLTAGE
(NORMALIZED)
1.20
TJ= -55°C
TJ= 150°C
60
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE
FIGURE 8, Breakdown Voltage vs Junction Temperature
120
100
80
60
Rev B 3-2013
0
TJ= 125°C
TJ= 25°C
TJ= 125°C
100
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
TJ= 25°C
120
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4, Output Characteristics (TJ = 25°C)
300
TJ= - 55°C
140
80
250
= 15V
40
20
0
-50
-25
0
25
50 75 100 125 150
TC, Case Temperature (°C)
FIGURE 9, DC Collector Current vs Case Temperature
052-6404
IC, COLLECTOR CURRENT (A)
40
GE
160
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FREQUENCY (kHz)
50
BV
V
180
TYPICAL PERFORMANCE CURVES
APT85GR120JD60
2.0E−8
1.0E−8
C, CAPACITANCE (F)
VGE, GATE-TO-EMITTER VOLTAGE (V)
18
Cies
1.0E−9
Coes
Cres
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 10, Capacitance vs Collector-To-Emitter Voltage
180
SWITCHING TIME (ns)
140
100
80
Td(on)
0
100
200
300
400
GATE CHARGE (nC)
FIGURE 11, Gate charge
500
Td(off)
350
300
250
VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C
TJ = 125°C
200
150
Tf
0
20 40
60 80 100 120 140 160 180
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-Off Time vs Collector Current
16000
VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C
TJ = 125°C
14000
SWITCHING ENERGY LOSS (μJ)
SWITCHING ENERGY LOSS (μJ)
2
10 20 50 70 90 110 130 150 170
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Turn-On Time vs Collector Current
Eon2
12000
Eon2
10000
10000
5000
Eoff
8000
Eoff
6000
4000
VCE = 600V, VGE=15V, IC = 85A
TJ = 125°C
2000
0
0
40
80
120
160
200
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Energy Loss vs Collector Current
8000
0
10
20
30
40
50
RG, GATE RESISTANCE (Ω) FIGURE 15, Energy Loss vs Gate Resistance
1000
Eon2
7000
6000
IC, COLLECTOR CURRENT (A)
SWITCHING ENERGY LOSSES (μJ)
4
50
0
Rev B 3-2013
VCE = 960V
6
20
20000
052-6404
8
100
15000
VCE = 600V
10
40
0
VCE = 240V
12
400
Tr
120
60
14
450
SWITCHING TIME (ns)
160
J
0
1.0E−10
VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C or 125°C
I = 85A
C
T = 25°C
16
VCE = 600V, VGE=15V, RG = 4.3Ω IC = 85A
5000
Eoff
4000
3000
0
25
50
75
100
125
100µs
10
1ms
10ms
1
0.1
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy vs Junction Temperature
100
1
10
100
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 17, Minimum Switching Safe Operating Area
APT85GR120JD60
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
IF(AV)
IF(RMS)
IFSM
APT85GR120JD60
Maximum Average Forward Current (TC = 92°C, Duty Cycle = 0.5)
60
RMS Forward Current (Square wave, 50% duty)
73
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
540
Unit
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
VF
Forward Voltage
Min
Type
IF = 60A
2.5
IF = 120A
3.07
IF = 60A, TJ = 125°C
1.82
Max
Unit
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
Test Conditions
Min
Typ
Max
IF = 1A, diF/dt = -100A/µs,
VR = 30V, TJ = 25°C
-
60
-
-
265
-
-
560
-
nC
-
5
-
Amps
-
350
-
ns
-
2890
-
nC
-
13
-
Amps
-
150
-
ns
-
4720
-
nC
-
40
-
Amps
IF = 60A, diF/dt = -200A/µs
VR = 800V, TC = 25°C
IF = 60A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
IF = 60A, diF/dt = -1000A/µs
VR = 800V, TC = 125°C
Unit
ns
D = 0.9
0.50
0.40
0.7
0.30
0.5
0.20
0.3
Note:
P DM
t1
t2
0.10
SINGLE PULSE
0.05
10
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 18. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
-5
10-4
Rev B 3-2013
0
t
0.1
052-6404
RθJC, THERMAL IMPEDANCE (°C/W)
0.60
Dynamic Characteristics
TJ = 25°C unless otherwise specified
200
400
TJ = 175°C
120
100
TJ = 125°C
80
60
TJ = 25°C
40
TJ = -55°C
20
0
T = 125°C
J
V = 800V
R
120A
5000
4000
60A
3000
30A
2000
1000
0
0
200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 21. Reverse Recovery Charge vs. Current Rate of Change
IF(AV) (A) Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
IRRM
40
35
30
25
60A
20
15
30A
10
5
Duty cycle = 0.5
T = 175°C
J
60
50
40
30
Qrr
20
10
0
0
75
100 125 150 175
Case Temperature (°C)
Figure 24. Maximum Average Forward Current vs. CaseTemperature
350
300
250
200
150
100
50
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 25. Junction Capacitance vs. Reverse Voltage
1
CJ, JUNCTION CAPACITANCE
(pF)
120A
R
70
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. Dynamic Parameters vs. Junction Temperature
0
T = 125°C
J
V = 800V
45
80
0.4
0.0
50
90
trr
0.2
Rev B 3-2013
052-6404
0.6
100
0
200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 22. Reverse Recovery Current vs. Current Rate of Change
trr
0.8
150
0
Qrr
1.0
30A
200
0
200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 20. Reverse Recovery Time vs. Current Rate of Change
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
6000
60A
250
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 19. Forward Current vs. Forward Voltage
7000
300
R
50
0
1.2
trr, REVERSE RECOVERY TIME (ns)
140
160
T = 125°C
J
V = 800V
120A
350
IF, FORWARD CURRENT
(A)
180
APT85GR120JD60
25
50
APT85GR120JD60
Vr
diF /dt Adjus t
+18V
0V
D.U.T.
30µH
trr/Q rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 26. Diode Test Circuit
1 IF - Forward Conduction Current
1
2 diF/dt - Rate of Diode Current Change Through Zero Crossing.
4
Zer o
3 IRRM - Maximum Reverse Recovery Current
4 trr - Reverse Recovery Time measured from zero crossing where diode current goes from positive to negative, to the point at 5
3
0.25 IRRM
2
which the straight line through IRRM and 0.25, IRRM passes through zero.
5 Qrr - Area Under the Curve Defined by IRRM and tRR.
Figure 27. Diode Reverse Recovery Waveform Definition
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter/Anode
Collector/Cathode
30.1 (1.185)
30.3 (1.193)
*Emitter/Anode terminals are
shorted internally. Current
handling capability is equal for
either Emitter/Anode terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter/Anode
Dimensions in Millimeters and (Inches)
Gate
Rev B 3-2013
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
052-6404
7.8 (.307)
8.2 (.322)
APT85GR120JD60
052-6404
Rev B 3-2013
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