APT85GR120JD60 APT85GR120JD60 1200V, 85A, Vce(on) = 2.5V Typical Ultra Fast NPT - IGBT® E E The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses. C G Features • Low Saturation Voltage • Low Tail Current file # E145592 ISOTOP ® • High Frequency Switching • RoHS Compliant 27 "UL Recognized" • Short Circuit Withstand Rated SO 2 T- Combi (IGBT and Diode) • Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 118 I C2 Continuous Collector Current @ TC = 75°C 85 I CM Pulsed Collector Current 340 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 μs Total Power Dissipation @ TC = 25°C 595 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 5.0 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 25°C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 125°C) 3.3 Collector-Emitter On Voltage (VGE = 15V, I C = 170A, Tj = 25°C) 3.5 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 20 (VCE = VGE, I C = 2.5mA, Tj = 25°C) 3.5 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES 2 Unit Volts 1100 µA ±250 nA 200 Gate-Emitter Leakage Current (VGE = ±20V) Microsemi Website - http://www.microsemi.com 052-6404 Rev B 3-2013 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate- Collector Charge td(on) Turn-On Delay Time tr td(off) tf APT85GR120JD60 Min Typ Capacitance 8400 VGE = 0V, VCE = 25V 725 f = 1MHz 190 V 490 660 60 85 IC = 85A 230 320 VGE = 15V VCE= 600V Inductive Switching (25°C) 43 Current Rise Time VCC = 600V 70 Turn-Off Delay Time VGE = 15V 300 nC ns 85 IC = 85A Turn-On Switching Energy RG = 4.3 Ω 6000 9000 Eoff 6 Turn-Off Switching Energy TJ = +25°C 3800 5700 td(on) Turn-On Delay Time Eon2 5 tr td(off) tf Eon2 4 Inductive Switching (125°C) 43 Current Rise Time VCC = 600V 70 Turn-Off Delay Time VGE = 15V 350 Current Fall Time Unit pF 7.5 Gate Charge Current Fall Time Max µJ ns 95 IC = 85A 5 Turn-On Switching Energy RG = 4.3 Ω Eoff 6 Turn-Off Switching Energy TJ = +125°C 4 7800 11,700 4900 7350 µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit RθJC Junction to Case Thermal Resistance (IGBT) - - 0.21 RθJC Junction to Case Thermal Resistance (Diode) - - 0.56 WT Package Weight - 1.03 - oz - - 10 in·lbf - - 1.1 N·m 2500 - - Volts Torque Terminals and Mounting Screws. VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) °C/W 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6404 D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 P DM ZθJC, THERMAL IMPEDANCE (°C/W) Rev B 3-2013 0.25 0.3 t2 0.05 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0 0.05 10-5 t1 SINGLE PULSE 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 TYPICAL PERFORMANCE CURVES APT85GR120JD60 60 200 IC, COLLECTOR CURRENT (A) 40 30 20 10 0 100 120 140 160 IC(A) FIGURE 2, Max Frequency vs Current (Tcase = 75°C) 300 15V 13V 60 10V 200 9.0V 150 8.0V 100 7.5V 50 7V 0 6.5V 0 4 8 12 16 250 200 150 100 TJ= 150°C 50 80 0 40 20 0 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Saturation Voltage Characteristics 1 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 6, Transfer Characteristics 6 5 4 IC = 85A 3 2 IC = 42.5A 1 0 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 5, On State Voltage vs Junction Temperature 6 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 5 4 IC = 170A 3 IC = 85A IC = 42.5A 2 1 6 140 1.15 1.10 1.05 1.00 0.95 0.90 0.85 IC = 170A 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage 160 IC, DC COLLECTOR CURRENT (A) CES , BREAKDOWN VOLTAGE (NORMALIZED) 1.20 TJ= -55°C TJ= 150°C 60 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE FIGURE 8, Breakdown Voltage vs Junction Temperature 120 100 80 60 Rev B 3-2013 0 TJ= 125°C TJ= 25°C TJ= 125°C 100 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250µs PULSE TEST<0.5 % DUTY CYCLE TJ= 25°C 120 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 4, Output Characteristics (TJ = 25°C) 300 TJ= - 55°C 140 80 250 = 15V 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) FIGURE 9, DC Collector Current vs Case Temperature 052-6404 IC, COLLECTOR CURRENT (A) 40 GE 160 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FREQUENCY (kHz) 50 BV V 180 TYPICAL PERFORMANCE CURVES APT85GR120JD60 2.0E−8 1.0E−8 C, CAPACITANCE (F) VGE, GATE-TO-EMITTER VOLTAGE (V) 18 Cies 1.0E−9 Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 10, Capacitance vs Collector-To-Emitter Voltage 180 SWITCHING TIME (ns) 140 100 80 Td(on) 0 100 200 300 400 GATE CHARGE (nC) FIGURE 11, Gate charge 500 Td(off) 350 300 250 VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C TJ = 125°C 200 150 Tf 0 20 40 60 80 100 120 140 160 180 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-Off Time vs Collector Current 16000 VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C TJ = 125°C 14000 SWITCHING ENERGY LOSS (μJ) SWITCHING ENERGY LOSS (μJ) 2 10 20 50 70 90 110 130 150 170 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Turn-On Time vs Collector Current Eon2 12000 Eon2 10000 10000 5000 Eoff 8000 Eoff 6000 4000 VCE = 600V, VGE=15V, IC = 85A TJ = 125°C 2000 0 0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Energy Loss vs Collector Current 8000 0 10 20 30 40 50 RG, GATE RESISTANCE (Ω) FIGURE 15, Energy Loss vs Gate Resistance 1000 Eon2 7000 6000 IC, COLLECTOR CURRENT (A) SWITCHING ENERGY LOSSES (μJ) 4 50 0 Rev B 3-2013 VCE = 960V 6 20 20000 052-6404 8 100 15000 VCE = 600V 10 40 0 VCE = 240V 12 400 Tr 120 60 14 450 SWITCHING TIME (ns) 160 J 0 1.0E−10 VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C or 125°C I = 85A C T = 25°C 16 VCE = 600V, VGE=15V, RG = 4.3Ω IC = 85A 5000 Eoff 4000 3000 0 25 50 75 100 125 100µs 10 1ms 10ms 1 0.1 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy vs Junction Temperature 100 1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 17, Minimum Switching Safe Operating Area APT85GR120JD60 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Characteristic / Test Conditions IF(AV) IF(RMS) IFSM APT85GR120JD60 Maximum Average Forward Current (TC = 92°C, Duty Cycle = 0.5) 60 RMS Forward Current (Square wave, 50% duty) 73 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 540 Unit Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions VF Forward Voltage Min Type IF = 60A 2.5 IF = 120A 3.07 IF = 60A, TJ = 125°C 1.82 Max Unit Volts DYNAMIC CHARACTERISTICS Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current Test Conditions Min Typ Max IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 60 - - 265 - - 560 - nC - 5 - Amps - 350 - ns - 2890 - nC - 13 - Amps - 150 - ns - 4720 - nC - 40 - Amps IF = 60A, diF/dt = -200A/µs VR = 800V, TC = 25°C IF = 60A, diF/dt = -200A/µs VR = 800V, TC = 125°C IF = 60A, diF/dt = -1000A/µs VR = 800V, TC = 125°C Unit ns D = 0.9 0.50 0.40 0.7 0.30 0.5 0.20 0.3 Note: P DM t1 t2 0.10 SINGLE PULSE 0.05 10 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 18. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -5 10-4 Rev B 3-2013 0 t 0.1 052-6404 RθJC, THERMAL IMPEDANCE (°C/W) 0.60 Dynamic Characteristics TJ = 25°C unless otherwise specified 200 400 TJ = 175°C 120 100 TJ = 125°C 80 60 TJ = 25°C 40 TJ = -55°C 20 0 T = 125°C J V = 800V R 120A 5000 4000 60A 3000 30A 2000 1000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 21. Reverse Recovery Charge vs. Current Rate of Change IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) IRRM 40 35 30 25 60A 20 15 30A 10 5 Duty cycle = 0.5 T = 175°C J 60 50 40 30 Qrr 20 10 0 0 75 100 125 150 175 Case Temperature (°C) Figure 24. Maximum Average Forward Current vs. CaseTemperature 350 300 250 200 150 100 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 25. Junction Capacitance vs. Reverse Voltage 1 CJ, JUNCTION CAPACITANCE (pF) 120A R 70 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 23. Dynamic Parameters vs. Junction Temperature 0 T = 125°C J V = 800V 45 80 0.4 0.0 50 90 trr 0.2 Rev B 3-2013 052-6404 0.6 100 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 22. Reverse Recovery Current vs. Current Rate of Change trr 0.8 150 0 Qrr 1.0 30A 200 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 20. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 6000 60A 250 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 19. Forward Current vs. Forward Voltage 7000 300 R 50 0 1.2 trr, REVERSE RECOVERY TIME (ns) 140 160 T = 125°C J V = 800V 120A 350 IF, FORWARD CURRENT (A) 180 APT85GR120JD60 25 50 APT85GR120JD60 Vr diF /dt Adjus t +18V 0V D.U.T. 30µH trr/Q rr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 26. Diode Test Circuit 1 IF - Forward Conduction Current 1 2 diF/dt - Rate of Diode Current Change Through Zero Crossing. 4 Zer o 3 IRRM - Maximum Reverse Recovery Current 4 trr - Reverse Recovery Time measured from zero crossing where diode current goes from positive to negative, to the point at 5 3 0.25 IRRM 2 which the straight line through IRRM and 0.25, IRRM passes through zero. 5 Qrr - Area Under the Curve Defined by IRRM and tRR. Figure 27. Diode Reverse Recovery Waveform Definition SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Emitter/Anode Collector/Cathode 30.1 (1.185) 30.3 (1.193) *Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Dimensions in Millimeters and (Inches) Gate Rev B 3-2013 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 052-6404 7.8 (.307) 8.2 (.322) APT85GR120JD60 052-6404 Rev B 3-2013 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp