FGH40N120AN 1200V NPT IGBT Chip 1200V, 40A, Eoff 1.1mJ Part VCES ICn VCE (sat) Typ Die Size FGH40N120AN 1200V 40A 2.6 6.5 x 9.7 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • AC & DC Motor Controls • High Speed Switching • General Purpose Inverters • Short Circuit Rated • High Input Impedance Maximum Ratings Symbol Parameter Ratings Units VCES Collector to Emitter Voltage 1200 V Gate to Emitter Voltage ±25 V Continuous (TC = 25°C) 64 A Continuous (TC = 100°C) 40 A 120 A 10 µS -55 to 150 °C VGES IC Drain Current 1 ICM SCWT TJ, TSTG Pulsed Collector Current Short Circuit Withstand Time 3 VCE = 600V, VGE = 15V, TC = 125°C Operation Junction & Storage Temperature Static Characteristics, TJ = 25° unless otherwise noted Symbol Parameter Test Conditions Min Typ BVCES ICES IGES Max Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 - - V Collector Cut-Off Current VCE = VCES , VGE = 0V - - 1 mA G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA Symbol Parameter Test Conditions Min Typ Max Units VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE 3.5 5..5 7.5 V IC = 40A, VGE = 15V - 2.6 3.2 V IC = 40A, VGE = 15V TC = 125°C - 2.9 - V VCE(sat) Collector to Emitter Saturation Voltage Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 On Characteristics, TJ = 25°C unless otherwise noted Dynamic Characteristics2, TJ = 25°C unless otherwise noted Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 30V, VGE = 0V f = 1MHz VCE = 600V, IC = 40A VGE = 15V Min Typ Max Units - 3200 - - 370 - - 125 - - 25 - - 130 - - 220 - Min Typ Max - 15 - ns - 20 - ns - 110 - ns - 40 - ns pF nC Switching Characteristics3, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions td(on) Turn-On Delay Time tr Rise Time td (off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - 2.3 - mJ Eoff Turn-Off Switching Loss - 1.1 - mJ Ets Total Switching Loss - 3.4 - mJ td (on) Turn-On Delay Time - 20 - ns - 25 - ns - 120 - ns - 45 - ns VCC = 600V, IC = 40A RG = 5Ω, VGE = 15V Inductive Load, TC = 25°C Units tr Rise Time td (off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - 2.5 - mJ Eoff Turn-Off Switching Loss - 1.8 - mJ Ets Total Switching Loss - 4.3 - mJ VCC = 600V, IC = 40A RG = 5Ω, VGE = 15V Inductive Load, TC = 125°C Notes: 1. Performance will vary based on assembly technique and substrate choice 2. Defined by chip design, not subject to 100% production test at wafer level 3. Specified in discrete package for indicative purposes only, bare die performance will vary depending on module design. 4. Ordering Guide Part Number Format Detail / Drawing FGH40N120ANMW FGH40N120ANMF FGH40N120ANMD Un-sawn wafer, electrical rejects inked Page 3 Sawn wafer on film-frame Page 4 Singulated die / chips in waffle pack Page 4 Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Die Drawing – Dimensions (µm) 6550 um Chip backside is 9710 um COLLECTOR 570 um 589 um Mechanical Data Parameter Units Chip Dimensions Un-sawn 6550 x 9710 µm Chip Thickness (Nominal) 160 µm Gate Pad Size 587 x 570 µm Wafer Diameter 150 (subject to change) mm 80 (subject to change) µm Saw Street Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 4 µm Backside Metallisation & Thickness V/Ni/Ag 0.35 µm Topside Passivation Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 150µm X1 Recommended Wire Bond – Source Al 380µm X3 Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 Wafer orientation on frame Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 6.96mm ±0.13mm pocket size Y = 10.67mm ±0.13mm pocket size Z = 0.76mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 5 X 3 (15) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,