TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
APT50GP60LDL(G)
600V, 50A, VCE(ON) = 2.2V Typical
Resonant Mode Combi IGBT®
The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high
frequency, high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Features
Typical Applications
• Low Conduction Loss
• Low Gate Charge
• SSOA Rated
• Induction Heating
• RoHS Compliant
• Welding
G
• Medical
• Low forward Diode Voltage (VF)
• High Power Telecom
• Ultrasoft Recovery Diode
• Resonant Mode Phase Shifted
Bridge
Symbol
E
C
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
C
G
E
All Ratings: TC = 25°C unless otherwise specified.
Parameter
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
SSOA
PD
Pulsed Collector Current
7
@ TC = 25°C
TL
Volts
150
72
1
Amps
190
Switching Safe Operating Area @ TJ = 150°C
190A @ 600V
Total Power Dissipation
TJ,TSTG
UNIT
Ratings
Watts
625
Operating and Storage Junction Temperature Range
-55 to 150
°C
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
600
VGE(TH)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
VCE(ON)
I CES
TYP
MAX
4.5
6
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
2.2
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
2.1
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
3
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
I GES
525
2
Gate-Emitter Leakage Current (VGE = ±20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Units
Volts
μA
2750
±100
nA
052-6354 Rev C 3-2012
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50GP60LDL(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Qge
Total Gate Charge
SSOA
Switching Safe Operating Area
td(on)
Turn-on Delay Time
tr
td(off )
tf
Eon1
30
Gate Charge
7.5
VGE = 15V
165
VCE = 300V
40
I C = 50A
50
TJ = 150°C, R G = 4.3Ω, VGE =
15V, L = 100μH,VCE = 600V
36
Turn-off Delay Time
85
Current Fall Time
I C = 50A
60
Turn-on Switching Energy
RG = 4.3Ω
19
Current Rise Time
VCC = 400V
36
Turn-off Delay Time
VGE = 15V
115
Turn-on Delay Time
I C = 50A
Current Fall Time
Turn-on Switching Energy (Diode)
Eoff
Turn-off Switching Energy
ns
μJ
55
ns
85
465
RG = 4.3Ω
44
Turn-on Switching Energy
nC
635
Inductive Switching (125°C)
Eon2
V
835
6
Eon1
pF
465
TJ = +25°C
5
UNIT
A
VGE = 15V
4
MAX
190
Current Rise Time
Turn-off Switching Energy
tf
f = 1 MHz
19
Eoff
td(off )
465
VCC = 400V
Turn-on Switching Energy (Diode)
tr
VGE = 0V, VCE = 25V
Inductive Switching (25°C)
Eon2
td(on)
5700
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
TYP
Capacitance
3
Qgc
MIN
TJ = +125°C
μJ
1260
6
1060
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.20
RθJC
Junction to Case (DIODE)
.63
WT
Package Weight
6.10
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
052-6354 Rev C 3-2012
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
°C/W
gm
APT50GP60LDL(G)
70
70
60
60
IC, COLLECTOR CURRENT (A)
50
40
TJ = -55°C
30
TJ = 25°C
20
TJ = 125°C
40
TJ = -55°C
30
TJ = 25°C
20
TJ = 125°C
10
10
0
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0
FIGURE 1, Output Characteristics(VGE = 15V)
100
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
FIGURE 2, Output Characteristics (VGE = 10V)
16
250μs PULSE
TEST<0.5 % DUTY
CYCLE
90
80
70
60
50
TJ = -55°C
40
TJ = 25°C
30
TJ = 125°C
20
10
0
0
1
2 3
4 5 6
7 8
9
VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE = 120V
12
VCE = 300V
10
8
VCE = 480V
6
4
2
0
20
40
60 80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3
IC = 100A
3.0
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
2.5
IC = 50A
2.0
IC = 25A
1.5
1.0
0.5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
J
33.5
FIGURE 3, Transfer Characteristics
6
IC = 100A
IC = 50A
2
IC = 25A
1.5
1
0.5
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
25
50
75
100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
1.20
-25
200
180
IC, DC COLLECTOR CURRENT(A)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
2.5
0
-50
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
I = 50A
C
T = 25°C
14
0
10
3.5
0
0.5
1.0
1.5
2.0
2.5
3.0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
160
140
120
100
80
60
Lead Temperature
Limited
40
20
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
0
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
052-6354 Rev C 3-2012
IC, COLLECTOR CURRENT (A)
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
140
VGE = 15V
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
25
20
15
10
5 VCE = 400V
TJ = 25°C or 125°C
0
RG = 4.3Ω
L = 100μH
100
VGE =15V,TJ=125°C
80
60
VGE =15V,TJ=25°C
40
20 VCE = 400V
RG = 4.3Ω
L = 100μH
0
20
30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
90
120
20
30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
RG = 4.3Ω, L = 100μH, VCE = 400V
RG = 4.3Ω, L = 100μH, VCE = 400V
80
TJ = 125°C, VGE = 15V
100
60
tf, FALL TIME (ns)
tr, RISE TIME (ns)
70
50
40
30
80
60
TJ = 25°C, VGE = 15V
40
TJ = 25 or 125°C,VGE = 15V
20
20
10
30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
V = 400V
CE
V = +15V
GE
R = 4.3Ω
EON2, TURN ON ENERGY LOSS (μJ)
3500
2500
2000
1500
1000
G
2500
TJ = 125°C
2000
1500
1000
TJ = 25°C
500
30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
Eon2,100A
4000
Eoff,100A
3000
2000
Eon2,50A
Eoff,50A
1000
Eon2,25A
Eoff,25A
0
V = 400V
CE
V = +15V
GE
R = 4.3Ω
3500
J
5000
20
4000
V = 400V
CE
V = +15V
GE
T = 125°C
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (μJ)
SWITCHING ENERGY LOSSES (μJ)
3000
0
20
6000
052-6354 Rev C 3-2012
V = 400V
CE
V = +15V
GE
R = 4.3Ω
TJ = 25°C
30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
0
30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3500
G
500
20
TJ = 125°C
3000
0
0
20
EOFF, TURN OFF ENERGY LOSS (μJ)
0
G
Eon2,100A
3000
Eoff,100A
2500
2000
1500
1000
Eon2,50A
500
Eon2,25A
Eoff,50A
0
Eoff,25A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
10,000
200
Cies
IC, COLLECTOR CURRENT (A)
180
P
C, CAPACITANCE ( F)
1,000
500
Coes
100
50
160
140
120
100
80
60
Cres
40
20
10
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.20
0.16
0.7
0.12
0.5
Note:
0.08
0.3
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
D = 0.9
t1
SINGLE PULSE
0.04
t2
t
0.1
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.05
0
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
220
RC MODEL
100
0.00463
0.0193
0.00218
0.0658
0.0142
0.0658
.1055
0.0142
.346
Powe r
(watts )
Case temperature. ( °C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
50
T = 125°C
J
T = 75°C
C
D = 50 %
V = 667V
CE
R = 5Ω
10
G
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
052-6354 Rev C 3-2012
0.00908
FMAX, OPERATING FREQUENCY (kHz)
Junctio n
temp. ( °C)
APT50GP60LDL(G)
APT50DL60
10%
Gate Voltage
T J = 125 °C
td(on)
V CE
IC
V CC
Collector Current
tr
90%
A
5%
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
t
90%
Gate Voltage
tf
Collector Voltage
90%
0
Switching Energy
10%
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
052-6354 Rev C 3-2012
5 % Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circui
td(off)
10%
T J = 125 °C
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT50GP60LDL(G)
Maximum Average Forward Current (TC = 124°C, Duty Cycle = 0.5)
50
RMS Forward Current (Square wave, 50% duty)
150
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
320
UNIT
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
MIN
Forward Voltage
TYP
MAX
IF = 50A
1.25
1.6
IF = 100A
2.0
IF = 50A, TJ = 125°C
1.25
UNIT
Volts
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
IF = 50A, diF/dt = -200A/μs
Reverse Recovery Time
IF = 50A, diF/dt = -200A/μs
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
VR = 400V, TC = 25°C
VR = 400V, TC = 125°C
Reverse Recovery Time
IF = 50A, diF/dt = -1000A/μs
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
VR = 400V, TC = 125°C
MIN
TYP
MAX
UNIT
-
52
-
399
-
1498
-
9
-
649
ns
-
3734
nC
-
13
-
284
ns
-
5134
nC
-
34
Amps
ns
nC
-
-
Amps
Amps
0.6
0.5
0.4
0.3
Note:
0.2
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.7
t1
t2
t
0.1
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
T J (°C)
T C (°C)
0.316
Dissipated Powe r
(Watts )
0.00467
0.312
0.1483
Z EXT are the external therma l
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction .
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6354 Rev C 3-2012
trr
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
Z EXT
Symbol
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
700
120
TJ= 125°C
R
trr, COLLECTOR CURRENT (A)
IF, FORWARD CURRENT (A)
100
TJ= 55°C
80
TJ= 25°C
60
40
20
0
0.5
1.0
1.5
2.0
2.5
3.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
100A
R
6000
50A
5000
25A
4000
3000
2000
1000
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
50A
400
25A
300
200
100
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
0
40
T = 125°C
J
V = 400V
R
50A
100A
35
30
25A
25
20
15
10
5
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
tRR
1.0
IRRM
0.8
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
500
45
T = 125°C
J
V = 400V
7000
600
0
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
0
8000
T = 125°C
J
V = 400V
100A
TJ= 150°C
QRR
0.6
0.4
0.2
Duty cycle = 0.5
TJ = 126°C
0
0
25
50
75
100
125
150
CJ, JUNCTION CAPACITANCE (pF)
052-6354 Rev C 3-2012
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
500
450
400
350
300
250
200
150
100
50
0
0
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
Vr
diF /dt Adjus t
+18V
0V
D.U.T.
trr/Q rr
Wavefor m
CURRENT
TRANSFORMER
Figure 9. Diode Test Circui
1
I F - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
t
1
4
6
Zer o
3
I RRM - Maximum Reverse Recovery Current
4
e diode
trr - Revers e R ecovery Time, measured from zero crossing wher
current goes from positive to negative, to the point at which the straight
line through I RRM and 0.25 I RRM passes through zero .
.
5
5
Q rr - Area Under the Curve Defined by I
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of t
RRM
3
2
0.25 I RRM
Slope = di
M/dt
and trr.
rr.
Figure 10, Diode Reverse Recovery Waveform and Definition
s
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Collector (Cathode)
Emitter (Anode)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
052-6354 Rev C 3-2012
Collector
(Cathode)
5.79 (.228)
6.20 (.244)