APT15GT120BR APT15GT120BR(G) TYPICAL PERFORMANCE CURVES APT15GT120BR_SR(G) APT15GT120SR APT15GT120SR(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® (B) TO The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 50KHz • Low Tail Current • Ultra Low Leakage Current -2 D 3 PA K 47 (S) C G G C E E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT15GT120BR_SR(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 36 I C2 Continuous Collector Current @ TC = 110°C 18 I CM SSOA PD Pulsed Collector Current 1 @ TC = 150°C TL Volts Amps 45 Switching Safe Operating Area @ TJ = 150°C 45A @ 960V Total Power Dissipation TJ,TSTG UNIT Watts 250 Operating and Storage Junction Temperature Range -55 to 150 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1mA) 1200 VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 0.6mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) VCE(ON) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) I CES Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) MAX 4.5 5.5 6.5 2.5 3.0 3.6 100 2 Gate-Emitter Leakage Current (VGE = ±20V) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Units Volts 3.8 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES TYP μA TBD 480 nA 052-6266 Rev E 3-2012 Symbol DYNAMIC CHARACTERISTICS Symbol APT15GT120BR_SR(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Total Gate Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr td(off ) tf Eon1 Eon1 65 Gate Charge 10 VGE = 15V 105 VCE = 600V 10 I C = 15A 60 TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100μH,VCE = 960V 11 Turn-off Delay Time 85 I C = 15A 35 RG = 5Ω 585 Turn-on Switching Energy 4 TJ = +25°C 5 10 Current Rise Time VCC = 800V 11 Turn-off Delay Time VGE = 15V 95 I C = 15A 42 RG = 5Ω 590 Turn-on Delay Time Current Fall Time Turn-on Switching Energy 44 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy V nC ns μJ 260 Inductive Switching (125°C) Eon2 pF 800 6 UNIT A VGE = 15V Current Fall Time MAX 45 Current Rise Time Turn-off Switching Energy tf f = 1 MHz 10 Eoff td(off ) 100 VCC = 800V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V Inductive Switching (25°C) Eon2 td(on) 1250 Gate-Emitter Charge Gate-Collector ("Miller ") Charge TYP Capacitance 3 Qgc MIN 55 TJ = +125°C ns μJ 1440 6 340 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .50 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6266 Rev E 3-2012 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. UNIT °C/W gm TYPICAL PERFORMANCE CURVES APT15GT120BR_SR(G) 60 45 V GE 15V = 15V 14V 40 35 IC, COLLECTOR CURRENT (A) TJ = -55°C 30 25 TJ = 25°C 20 15 TJ = 125°C 10 13V 40 12V 30 11V 20 10V 9V 10 5 0 8V 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 7 0 FIGURE 1, Output Characteristics(TJ = 25°C) 45 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 35 30 25 20 TJ = -55°C 15 TJ = 25°C 10 TJ = 125°C 5 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 15A C T = 25°C J 14 VCE = 240V 12 VCE = 600V 10 VCE = 960V 8 6 4 2 0 14 0 20 FIGURE 3, Transfer Characteristics TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 5 IC = 30A 4 IC = 15A 3 IC = 7.5A 2 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 100 120 6 9 IC = 30A 4 IC = 15A IC = 7.5A 3 2 1 VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 1.10 -25 45 40 IC, DC COLLECTOR CURRENT(A) 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 5 0 -50 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 40 60 80 GATE CHARGE (nC) FIGURE 4, Gate Charge 6 0 30 FIGURE 2, Output Characteristics (TJ = 125°C) 16 250μs PULSE TEST<0.5 % DUTY CYCLE 40 5 10 15 20 25 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 35 30 25 20 15 10 5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 052-6266 Rev E 3-2012 IC, COLLECTOR CURRENT (A) 50 APT15GT120BR_SR(G) 120 14 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 12 10 8 6 4 VCE = 600V 2 TJ = 25°C, TJ =125°C 0 RG = 5Ω L = 100 μH 40 20 VCE = 800V RG = 5Ω 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current RG = 5Ω, L = 100μH, VCE = 800V 40 35 tf, FALL TIME (ns) tr, RISE TIME (ns) VGE =15V,TJ=25°C 60 45 RG = 5Ω, L = 100μH, VCE = 800V 30 25 20 15 10 30 TJ = 125°C, VGE = 15V TJ = 25°C, VGE = 15V 25 20 15 10 TJ = 25 or 125°C,VGE = 15V 5 5 0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 EOFF, TURN OFF ENERGY LOSS (μJ) G 3000 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1000 V = 800V CE V = +15V GE R = 5Ω 3500 EON2, TURN ON ENERGY LOSS (μJ) VGE =15V,TJ=125°C L = 100 μH 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 35 0 80 0 5 40 100 TJ = 125°C 2500 2000 1500 1000 500 V = 800V CE V = +15V GE R = 5Ω G 800 TJ = 125°C 600 400 200 TJ = 25°C TJ = 25°C 0 0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 Eon2,30A J 6000 5000 4000 3000 2000 Eoff,30A Eon2,15A Eoff,15A 1000 Eon2,7.5A 0 0 V = 800V CE V = +15V GE R = 5Ω 3500 SWITCHING ENERGY LOSSES (μJ) SWITCHING ENERGY LOSSES (μJ) 052-6266 Rev E 3-2012 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4000 V = 800V CE V = +15V GE T = 125°C 7000 5 G Eon2,30A 3000 2500 2000 1500 Eon2,15A Eon2,7.5A 500 Eoff,7.5A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance Eoff,30A 1000 Eoff,7.5A 0 0 Eoff,15A 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES APT15GT120BR_SR(G) 2,000 50 Cies 45 IC, COLLECTOR CURRENT (A) 1,000 P C, CAPACITANCE ( F) 500 Coes 100 50 Cres 40 35 30 25 20 15 10 5 10 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.60 D = 0.9 0.40 0.7 0.5 Note: 0.3 P DM 0.30 0.20 t1 t2 0.10 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 0.1 0.05 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 400 100 50 F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf 10 5 1 T = 125°C J T = 75°C C D = 50 % V = 800V CE R = 5Ω G f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC 0 5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 052-6266 Rev E 3-2012 FMAX, OPERATING FREQUENCY (kHz) ZθJC, THERMAL IMPEDANCE (°C/W) 0.50 APT15GT120BR_SR(G) Gate Voltage APT15DQ120 10% TJ = 125°C td(on) tr V CE IC V CC Collector Current 90% 10% 5% 5% Collector Voltage A Switching Energy D.U.T. Figure 21, Inductive Switching Test Circui Figure 22, Turn-on Switching Waveforms and Definitions t 90% Gate Voltage TJ = 125°C td(off ) tf Collector Voltage 90% 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 3 TO -247 P ackage Outlin e D PAK Package Outlin e e1 SAC: Tin, Silver, Copper e3 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC Collector (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 Collector 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 052-6266 Rev E 3-2012 13.41 (.528) 13.51(.532) Gate Collector Emitter 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches ) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs. } Emitter Collector Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead ) Heat Sink (Collector) and Leads are Plated