APT15GT120B_SR(G)_E.pdf

APT15GT120BR
APT15GT120BR(G)
TYPICAL PERFORMANCE CURVES
APT15GT120BR_SR(G)
APT15GT120SR
APT15GT120SR(G)
1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT®
(B)
TO
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 50KHz
• Low Tail Current
• Ultra Low Leakage Current
-2
D 3 PA K
47
(S)
C
G
G
C
E
E
C
• RBSOA and SCSOA Rated
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT15GT120BR_SR(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
36
I C2
Continuous Collector Current @ TC = 110°C
18
I CM
SSOA
PD
Pulsed Collector Current
1
@ TC = 150°C
TL
Volts
Amps
45
Switching Safe Operating Area @ TJ = 150°C
45A @ 960V
Total Power Dissipation
TJ,TSTG
UNIT
Watts
250
Operating and Storage Junction Temperature Range
-55 to 150
°C
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1mA)
1200
VGE(TH)
Gate Threshold Voltage (VCE = VGE, I C = 0.6mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C)
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C)
I CES
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
MAX
4.5
5.5
6.5
2.5
3.0
3.6
100
2
Gate-Emitter Leakage Current (VGE = ±20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Units
Volts
3.8
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
I GES
TYP
μA
TBD
480
nA
052-6266 Rev E 3-2012
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT15GT120BR_SR(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Qge
Total Gate Charge
SSOA
Switching Safe Operating Area
td(on)
Turn-on Delay Time
tr
td(off )
tf
Eon1
Eon1
65
Gate Charge
10
VGE = 15V
105
VCE = 600V
10
I C = 15A
60
TJ = 150°C, R G = 5Ω, VGE =
15V, L = 100μH,VCE = 960V
11
Turn-off Delay Time
85
I C = 15A
35
RG = 5Ω
585
Turn-on Switching Energy
4
TJ = +25°C
5
10
Current Rise Time
VCC = 800V
11
Turn-off Delay Time
VGE = 15V
95
I C = 15A
42
RG = 5Ω
590
Turn-on Delay Time
Current Fall Time
Turn-on Switching Energy
44
Turn-on Switching Energy (Diode)
Eoff
Turn-off Switching Energy
V
nC
ns
μJ
260
Inductive Switching (125°C)
Eon2
pF
800
6
UNIT
A
VGE = 15V
Current Fall Time
MAX
45
Current Rise Time
Turn-off Switching Energy
tf
f = 1 MHz
10
Eoff
td(off )
100
VCC = 800V
Turn-on Switching Energy (Diode)
tr
VGE = 0V, VCE = 25V
Inductive Switching (25°C)
Eon2
td(on)
1250
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
TYP
Capacitance
3
Qgc
MIN
55
TJ = +125°C
ns
μJ
1440
6
340
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.50
RθJC
Junction to Case (DIODE)
N/A
WT
Package Weight
5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
052-6266 Rev E 3-2012
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
°C/W
gm
TYPICAL PERFORMANCE CURVES
APT15GT120BR_SR(G)
60
45
V
GE
15V
= 15V
14V
40
35
IC, COLLECTOR CURRENT (A)
TJ = -55°C
30
25
TJ = 25°C
20
15
TJ = 125°C
10
13V
40
12V
30
11V
20
10V
9V
10
5
0
8V
0
1
2
3
4
5
6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0
7
0
FIGURE 1, Output Characteristics(TJ = 25°C)
45
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
35
30
25
20
TJ = -55°C
15
TJ = 25°C
10
TJ = 125°C
5
0
0
2
4
6
8
10
12
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 15A
C
T = 25°C
J
14
VCE = 240V
12
VCE = 600V
10
VCE = 960V
8
6
4
2
0
14
0
20
FIGURE 3, Transfer Characteristics
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
5
IC = 30A
4
IC = 15A
3
IC = 7.5A
2
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
100
120
6
9
IC = 30A
4
IC = 15A
IC = 7.5A
3
2
1
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
25
50
75
100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
1.10
-25
45
40
IC, DC COLLECTOR CURRENT(A)
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50
5
0
-50
10
11
12
13
14
15
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
40
60
80
GATE CHARGE (nC)
FIGURE 4, Gate Charge
6
0
30
FIGURE 2, Output Characteristics (TJ = 125°C)
16
250μs PULSE
TEST<0.5 % DUTY
CYCLE
40
5
10
15
20
25
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
35
30
25
20
15
10
5
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
0
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
052-6266 Rev E 3-2012
IC, COLLECTOR CURRENT (A)
50
APT15GT120BR_SR(G)
120
14
VGE = 15V
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
12
10
8
6
4
VCE = 600V
2 TJ = 25°C, TJ =125°C
0
RG = 5Ω
L = 100 μH
40
20 VCE = 800V
RG = 5Ω
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
RG = 5Ω, L = 100μH, VCE = 800V
40
35
tf, FALL TIME (ns)
tr, RISE TIME (ns)
VGE =15V,TJ=25°C
60
45
RG = 5Ω, L = 100μH, VCE = 800V
30
25
20
15
10
30
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
25
20
15
10
TJ = 25 or 125°C,VGE = 15V
5
5
0
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
EOFF, TURN OFF ENERGY LOSS (μJ)
G
3000
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1000
V = 800V
CE
V = +15V
GE
R = 5Ω
3500
EON2, TURN ON ENERGY LOSS (μJ)
VGE =15V,TJ=125°C
L = 100 μH
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
35
0
80
0
5
40
100
TJ = 125°C
2500
2000
1500
1000
500
V = 800V
CE
V = +15V
GE
R = 5Ω
G
800
TJ = 125°C
600
400
200
TJ = 25°C
TJ = 25°C
0
0
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
Eon2,30A
J
6000
5000
4000
3000
2000
Eoff,30A
Eon2,15A
Eoff,15A
1000
Eon2,7.5A
0
0
V = 800V
CE
V = +15V
GE
R = 5Ω
3500
SWITCHING ENERGY LOSSES (μJ)
SWITCHING ENERGY LOSSES (μJ)
052-6266 Rev E 3-2012
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
V = 800V
CE
V = +15V
GE
T = 125°C
7000
5
G
Eon2,30A
3000
2500
2000
1500
Eon2,15A
Eon2,7.5A
500
Eoff,7.5A
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
Eoff,30A
1000
Eoff,7.5A
0
0
Eoff,15A
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT15GT120BR_SR(G)
2,000
50
Cies
45
IC, COLLECTOR CURRENT (A)
1,000
P
C, CAPACITANCE ( F)
500
Coes
100
50
Cres
40
35
30
25
20
15
10
5
10
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.60
D = 0.9
0.40
0.7
0.5
Note:
0.3
P DM
0.30
0.20
t1
t2
0.10
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
SINGLE PULSE
0.1
0.05
0
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
400
100
50
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
10
5
1
T = 125°C
J
T = 75°C
C
D = 50 %
V = 800V
CE
R = 5Ω
G
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
0
5
10
15
20
25
30
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
052-6266 Rev E 3-2012
FMAX, OPERATING FREQUENCY (kHz)
ZθJC, THERMAL IMPEDANCE (°C/W)
0.50
APT15GT120BR_SR(G)
Gate Voltage
APT15DQ120
10%
TJ = 125°C
td(on)
tr
V CE
IC
V CC
Collector Current
90%
10%
5%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circui
Figure 22, Turn-on Switching Waveforms and Definitions
t
90%
Gate Voltage
TJ = 125°C
td(off )
tf
Collector Voltage
90%
10% 0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
3
TO -247 P ackage Outlin e
D PAK Package Outlin e
e1 SAC: Tin, Silver, Copper
e3 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Collector
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
Collector
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
052-6266 Rev E 3-2012
13.41 (.528)
13.51(.532)
Gate
Collector
Emitter
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches
)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs. }
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead )
Heat Sink (Collector)
and Leads are Plated
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