Central CQ202-4B CQ202-4D CQ202-4M CQ202-4N TM Semiconductor Corp. 4.0 AMP TRIAC 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-202 THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=80°C) IT(RMS) Peak Non-Repetitive Surge Current (t=8.3ms) ITSM Peak Non-Repetitive Surge Current (t=10ms) ITSM CQ202 -4B CQ202 -4D 200 400 CQ202 -4M CQ202 -4N UNITS 600 800 V 4.0 A 40 A 35 A I 2t 6.0 A2s PGM PG (AV) 3.0 W Average Gate Power Dissipation 0.2 W Peak Gate Current (tp=10µs) IGM 1.2 A Storage Temperature Tstg TJ -40 to +150 °C Junction Temperature -40 to +125 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 7.5 °C/W I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10µs) ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III TYP 6.6 MAX UNITS 10 µA 200 µA 20 mA VD=12V, QUAD IV 35 50 mA IH VGT RGK=1KΩ 5.2 25 mA VD=12V, QUAD I, II, III 1.1 1.5 V VGT VD=12V, QUAD IV 2.0 2.5 V VTM dv/dt ITM=6.0A, tp=380µs VD=2 /3 VDRM, TC=125°C 1.25 1.60 5.0 V V/µs R5 (27-June 2005) Central TM CQ202-4B CQ202-4D CQ202-4M CQ202-4N Semiconductor Corp. 4.0 AMP TRIAC 200 THRU 800 VOLTS TO-202 THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE NOTE: TAB IS COMMON TO PIN 2 (MT2) MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F (DIA) G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.057 0.061 1.45 1.55 0.019 0.021 0.49 0.52 0.175 0.180 4.44 4.56 0.376 0.388 9.55 9.85 0.118 0.134 3.00 3.40 0.124 0.126 3.15 3.20 0.035 0.043 0.90 1.10 0.023 0.028 0.59 0.71 0.098 0.102 2.49 2.59 0.459 0.559 11.66 14.21 0.280 0.301 7.12 7.65 0.406 0.425 10.30 10.80 0.024 0.059 0.60 1.50 TO-202 Thyristor (REV: R0) R5 (27-June 2005)