IRF CPV362MU

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PD - 5.027
CPV362MU
Ultra-Fast IGBT
IGBT SIP MODULE
Features
•
•
•
•
1
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
TM
HEXFRED soft ultrafast diodes
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
3
D1
Q1
9
D3
Q3
15
4
6
D2
Q2
Product Summary
12
D5
Q5
10
D4
Q4
7
18
16
D6
Q6
13
19
Output Current in a Typical 20 kHz Motor Drive
3.5 ARMS per phase (1.1 kW total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
IF @ T C = 100°C
IFM
VGE
VISOL
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
7.2
3.9
22
22
3.4
22
±20
2500
23
9.1
-40 to +150
V
A
V
VRMS
W
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink,flat,greased surface
Weight of module
C-741
To Order
Typ.
Max.
—
—
0.1
20 (0.7)
5.5
9.0
—
—
Units
°C/W
g (oz)
Revision 1
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CPV362MU
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, I C = 250µA
— 0.69 —
V/°C VGE = 0V, IC = 1.0mA
—
2.1 2.6
IC = 3.9A
V GE = 15V
—
2.5
—
V
IC = 7.2A
See Fig. 2, 5
—
2.0
—
IC = 3.9A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-11
— mV/°C VCE = VGE, IC = 250µA
1.4
4.3
—
S
VCE = 100V, I C = 6.5A
—
—
250
µA
VGE = 0V, V CE = 600V
—
— 1700
VGE = 0V, V CE = 600V, T J = 150°C
—
1.4 1.7
V
IC = 8.0A
See Fig. 13
—
1.3 1.6
IC = 8.0A, T J = 150°C
—
— ±500 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During t b
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
16
2.4
7.8
22
12
71
91
0.19
0.07
0.26
23
13
140
200
0.83
330
65
6.0
37
55
3.5
4.5
65
124
240
210
Max. Units
Conditions
22
IC = 6.5A
3.8
nC
VCC = 400V
13
See Fig. 8
—
TJ = 25°C
—
ns
IC = 6.5A, V CC = 480V
95
VGE = 15V, R G = 50Ω
280
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ
See Fig. 9, 10, 11, 18
0.42
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
—
ns
IC = 6.5A, V CC = 480V
—
VGE = 15V, R G = 50Ω
—
Energy losses include "tail" and
—
mJ
diode reverse recovery.
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
55
ns
TJ = 25°C See Fig.
90
TJ = 125°C
14
I F = 8.0A
5.0
A
TJ = 25°C See Fig.
8.0
TJ = 125°C
15
V R = 200V
138
nC
TJ = 25°C See Fig.
360
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-742
To Order
Pulse width 5.0µs,
single shot.
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6
1.9
4
1.2
2
0.6
TC = 90°C
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VC C = 60% of Rated Voltage
To tal O utput P ow er (kW )
L oad C u rren t (A )
CPV362MU
S
0
0
0.1
1
10
100
f, F re quency (kH z)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
100
IC , Collector-to-Em itter C urrent (A)
I C , Collector-to-E m itter C urrent (A)
100
TJ = 2 5°C
TJ = 1 50 °C
10
V G E = 15 V
20 µs P UL S E W ID TH
1
1
TJ = 1 50 °C
10
T J = 2 5°C
1
V C C = 1 00 V
5 µs P U L S E W ID TH
0.1
10
5
10
15
V G E , G ate-to-E m itter V olta g e (V )
V C E , C o llector-to-Em itter V oltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-743
To Order
20
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CPV362MU
14
4.0
V C E , C ollector-to-E m itter V oltage (V )
V G E = 15 V
M aximum D C Collector Current (A )
12
10
8
6
4
2
0
V G E = 15 V
80 µ s P UL S E W IDTH
3.5
I C = 1 3A
3.0
2.5
I C = 6.5A
2.0
I C = 3.3 A
1.5
1.0
25
50
75
100
125
-60
150
T C , C ase Tem perature (°C )
-40
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T h e rm a l R e sp o n s e (Z thJC )
10
D = 0 .5 0
0 .2 0
1
0 .1 0
0 .0 5
0 .0 2
0 .0 1
PD M
0.1
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
t2
N o te s :
1 . D u ty fa c to r D = t
0.01
0.000 01
1
1
/t
2
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R e c ta n g u lar P u ls e D u ra tio n (s e c )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-744
To Order
10
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CPV362MU
700
V G E , G ate -to-E m itter V oltage (V )
600
C , Capacitance (pF )
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
16
500
Cies
400
12
Coes
300
200
Cres
100
V C E = 4 00 V
I C = 6.5 A
8
4
0
0
1
10
0
100
4
V C E , C o llector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VC C
VG E
TC
IC
12
16
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
= 48 0V
= 15V
= 25 °C
= 6.5A
T o tal S w itc hing Los se s (m J)
Total S witching Losses (m J)
0 .35
8
Q g , To ta l G a te C h arg e (nC )
0 .34
0 .33
0 .32
R G = 50 Ω
V GE = 1 5V
V CC = 4 8 0V
I C = 13A
1
I C = 6.5A
I C = 3.3 A
0.1
20
25
30
35
40
45
50
55
-60
R G , G ate R esistance (Ω )
-20
0
20
40
60
80
100 120 14 0 160
TC , C ase Tem peratu re (°C )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
-40
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-745
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CPV362MU
1.0
1000
= 50 Ω
= 1 50°C
= 48 0V
= 1 5V
I C , C o lle c to r-to -E m itte r C u rre n t (A )
RG
TC
VCC
VGE
0.8
0.6
0.4
0.2
VGGE E= 20 V
T J = 125 °C
100
S A FE O P E R A TIN G A R E A
10
1
0.1
0
3
6
9
12
15
1
I C , C o lle c to r-to -E m itte r C u rre n t (A )
10
100
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
T o ta l S w itc h in g L o s s e s (m J )
1.2
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-746
To Order
1000
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CPV362MU
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
60
I F = 8.0A
I IRRM - (A)
t rr - (ns)
IF = 16A
I F = 16A
10
IF = 8.0A
40
I F = 4.0A
I F = 4.0A
20
0
100
1
100
1000
di f /dt - (A/µs)
1000
di f /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
Q RR - (nC)
400
300
I F = 16A
200
I F = 8.0A
IF = 4.0A
1000
IF = 8.0A
I F = 16A
100
IF = 4.0A
0
100
1000
di f /dt - (A/µs)
100
100
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-747
To Order
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CPV362MU
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
Ic
90% Ic
10% Vce
Ic
430µF
80%
of Vce
5% Ic
D.U.T.
td(off)
tf
Eoff =
∫
t1+5µS
Vce ic dt
t1
Fig.18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig.18a,
Defining E rec, trr, Qrr, Irr
Defining E on, td(on), tr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 5 - IMS-2 Package (13 pins)
C-748
To Order
Section D - page D-14