APT30GP60B2DL(G)
APT30GP60LDL(G)
600V, 30A, VCE(ON) = 2.2V Typical
Resonant Mode Combi IGBT®
The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high
frequency, high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Features
G
Typical Applications
• Low Conduction Loss
• SSOA Rated
• Induction Heating
• Low Gate Charge
• RoHS Compliant
• Welding
E
G
• Medical
• Low forward Diode Voltage (VF)
• High Power Telecom
• Ultrasoft Recovery Diode
• Resonant Mode Phase Shifted
Bridge
G
E
Parameter
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±20
Gate-Emitter Voltage Transient
±30
I C1
Continuous Collector Current @ TC = 25°C
100
I C2
Continuous Collector Current @ TC = 110°C
49
I CM
Pulsed Collector Current
PD
TJ,TSTG
TL
UNIT
Ratings
VCES
SSOA
E
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
VGEM
C
C
• Ultrafast Tail Current shutoff
Symbol
C
1
Volts
Amps
120
@ TC = 25°C
120A @ 600V
Switching Safe Operating Area @ TJ = 150°C
Watts
463
Total Power Dissipation
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
TYP
MAX
4.5
6
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C)
2.2
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C)
2.1
3
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
275
2
Gate-Emitter Leakage Current (VGE = ±20V)
2750
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
UNIT
Volts
μA
nA
6-2009
MIN
Rev B
Characteristic / Test Conditions
052-6355
Symbol
APT30GP60B2DL_LDL(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Total Gate Charge
3
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
Switching SOA
MIN
TYP
Capacitance
3200
VGE = 0V, VCE = 25V
295
f = 1 MHz
20
Gate Charge
7.5
VGE = 15V
90
VCE = 300V
20
I C = 30A
30
TJ = 150°C, R G = 5Ω, VGE =
MAX
UNIT
pF
V
nC
120
A
15V, L = 100μH,VCE = 600V
Inductive Switching (25°C)
13
VCC(Peak) = 400V
18
VGE = 15V
55
Current Fall Time
I C = 30A
46
Eon1
Turn-on Switching Energy
RG = 5Ω
260
Eon2
Turn-on Switching Energy (Diode)
TJ = +25°C
335
Eoff
Turn-off Switching Energy
td(on)
Turn-on Delay Time
td(on)
tr
td(off)
tf
tr
td(off)
tf
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
4
6
250
Inductive Switching (125°C)
13
VCC(Peak) = 400V
18
VGE = 15V
84
I C = 30A
80
RG = 5Ω
260
TJ = +125°C
508
Current Rise Time
Turn-off Delay Time
Current Fall Time
4
Eon1
Turn-on Switching Energy
Eon2
Turn-on Switching Energy (Diode)
Eoff
5
Turn-off Switching Energy
5
6
ns
μJ
330
ns
μJ
518
750
TYP
MAX
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case (IGBT)
.27
RθJC
Junction to Case (DIODE)
.88
WT
Package Weight
5.90
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
052-6355
Rev B
6-2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PREFORMANCE CURVES
30
20
TC=25°C
10
TC=125°C
0
FIGURE 1, Output Characteristics(VGE = 15V)
200
TJ = -55°C
160
140
120
100
80
TJ = 25°C
TJ = 125°C
40
20
4
3.5
0
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
IC= 60A
2.5
IC= 30A
2
IC= 15A
1.5
1
0.5
0
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
20
0.90
0.85
0.8
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
J
VCE=120V
VCE=300V
8
VCE=480V
6
4
2
3.5
3
0
10
20 30 40 50 60 70 80 90 100
GATE CHARGE (nC)
FIGURE 4, Gate Charge
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
IC= 60A
2.5
2
IC= 30A
IC=15A
1.5
1
0.5
0
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TRMPERATURE (°C)
FIGURE 6, On State Voltage vs Junction Temperature
120
0.95
I = 30A
C
T = 25°C
10
1.15
1.0
0
0.5
1
1.5
2
2.5
3
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
12
140
1.05
TC=125°C
14
1.2
1.10
TC=25°C
10
0
2
4
6
8
10
12
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
60
IC, DC COLLECTOR CURRENT(A)
IC, COLLECTOR CURRENT (A)
180
30
FIGURE 2, Output Characteristics (VGE = 10V)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
250μs PULSE TEST
<0.5 % DUTY CYCLE
40
0
0
0.5
1
1.5
2
2.5
3
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
TC=-55°C
100
80
60
40
20
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
6-2009
40
50
APT30GP60B2DL_LDL(G)
VGE = 10V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
Rev B
TC=-55°C
IC, COLLECTOR CURRENT (A)
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
50
IC, COLLECTOR CURRENT (A)
60
052-6355
60
APT30GP60B2DL_LDL(G)
100
VGE= 10V
20
15
VGE= 15V
10
VCE = 400V
TJ = 25°C, TJ =125°C
RG = 5Ω
L = 100 μH
0
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
5
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
25
VGE =15V,TJ=125°C
90
80
70
VGE =10V,TJ=125°C
60
50
40
VGE =10V,TJ=25°C
30
20
10
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
RG = 5Ω, L = 100μH, VCE = 400V
TJ = 25 or 125°C,VGE = 10V
80
tf, FALL TIME (ns)
40
tr, RISE TIME (ns)
VGE =15V,TJ=25°C
0
50
30
20
10
0
VCE = 400V
RG = 5Ω
L = 100 μH
TJ = 125°C, VGE = 10V or 15V
60
40
TJ = 25°C, VGE = 10V or 15V
20
TJ = 25 or 125°C,VGE = 15V
RG = 5Ω, L = 100μH, VCE = 400V
0
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
V
= 400V
CE
V
= +15V
GE
R =5Ω
1200
TJ = 125°C,VGE =15V
G
1000
TJ = 125°C,VGE =10V
800
600
TJ = 25°C,VGE =15V
400
TJ = 25°C,VGE =10V
200
V
= 400V
CE
V
= +15V
GE
R =5Ω
EOFF, TURN OFF ENERGY LOSS (μJ)
EON2, TURN ON ENERGY LOSS (μJ)
1400
0
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
G
TJ = 125°C, VGE = 10V or 15V
TJ = 25°C, VGE = 10V or 15V
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
052-6355
SWITCHING ENERGY LOSSES (μJ)
V
= 400V
CE
V
= +15V
GE
T = 125°C
J
2000
Eon2, 60A
1500
Eoff, 60A
1000
Eon2, 30A
500
Eoff, 30A
Eon2, 15A
Eoff, 15A
10
20
30
40
50
60
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
= 400V
V
CE
V
= +15V
GE
R =5Ω
SWITCHING ENERGY LOSSES (μJ)
Rev B
6-2009
2500
G
Eon2,60A
Eoff,60A
Eon2,30A
Eoff, 30A
Eon2,15A
Eoff, 15A
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PREFORMANCE CURVES
APT30GP60B2DL_LDL(G)
140
10,000
Cies
120
500
IC, COLLECTOR CURRENT (A)
1,000
P
C, CAPACITANCE ( F)
5,000
Coes
100
50
Cres
10
5
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
100
80
60
40
20
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.25
0.9
0.20
0.7
0.15
0.5
0.10
0.3
Note:
0.05
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.30
t2
0.1
Duty Factor D = t1/t2
0.05
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0
10
t1
10
10
10
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
-5
-4
-3
-2
1.0
100
Fmax = min(f max1 , f max 2 )
50
10
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 400V
CE
R =5Ω
f max1 =
0.05
t d(on ) + t r + t d(off ) + t f
f max 2 =
Pdiss − Pcond
E on 2 + E off
Pdiss =
TJ − TC
R θJC
G
20
30
40
50
60
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
6-2009
10
Rev B
0
052-6355
FMAX, OPERATING FREQUENCY (kHz)
300
APT30GP60B2DL_LDL(G)
APT30DL60
APT15DF60
Gate Voltage
10 %
TJ = 125 C
td(on)
IC
V CC
tr
V CE
Collector Current
90%
A
5%
D.U.T.
10%
5%
Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST
td(off)
Gate Voltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125 C
Collector Voltage
A
tf
V CE
IC
90%
100uH
V CLAMP
10%
B
0
A
Switching Energy
Collector Current
052-6355
Rev B
6-2009
Figure 23, Turn-off Switching Waveforms and Definitions
DRIVER*
Figure 24, EON1 Test Circuit
D.U.T.
APT30GP60B2DL_LDL(G)
DYNAMIC CHARACTERISTICS
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
APT30GP60B2DL_LDL(G) UNIT
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5)
30
RMS Forward Current (Square wave, 50% duty)
51
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
Forward Voltage
MIN
TYP
MAX
IF = 30A
1.3
1.6
IF = 60A
2.0
IF = 30A, TJ = 125°C
1.9
UNIT
Volts
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C
F
F
R
J
-
64
trr
Reverse Recovery Time
-
317
Qrr
Reverse Recovery Charge
-
962
-
7
-
561
ns
-
2244
nC
-
9
-
264
ns
-
3191
nC
-
26
Amps
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
-
-
Amps
Amps
0.9
0.8
0.7
0.6
0.5
0.4
Note:
0.3
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
IRRM
IF =30A, diF/dt = -200A/μs
nC
0.2
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0
t1
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
6-2009
IRRM
VR = 400V, TC = 25°C
Rev B
IRRM
IF = 30A, diF/dt = -200A/μs
ns
052-6355
Symbol
APT30GP60B2DL_LDL(G)
800
100
TJ= 125°C
TJ= 150°C
60
TJ= 25°C
50
40
30
20
10
0
Qrr, REVERSE RECOVERY CHARGE
(nC)
TJ= 55°C
70
0
0.5
1.0
1.5
2.0
2.5 3.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
4500
T = 125°C
60A
J
V = 400V
R
4000
3500
30A
3000
2500
15A
2000
1500
1000
500
0
tRR
0.6
QRR
0.4
CJ, JUNCTION CAPACITANCE (pF)
T = 125°C
J
V = 400V
28
60A
R
30A
24
15A
20
16
12
8
4
0
40
30
20
10
0
25
50
75
100
125
150
300
6-2009
100
50
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
Rev B
200
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
70
IRRM
0.2
052-6355
300
60
0.8
250
200
150
100
50
0
15A
400
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
32
1
0
30A
500
0
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
R
60A
600
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT (A)
80
T = 125°C
J
V = 400V
700
trr, COLLECTOR CURRENT (A)
90
1
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
Vr
diF /dt Adjust
+18V
0V
D.U.T.
trr/Qrr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
1
4
6
Zero
5
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
0.25 IRRM
3
Slope = diM/dt
2
Figure 10, Diode Reverse Recovery Waveform and Definitions
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Gate
Collector
(Cathode)
(Cathode)
(Anode)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
(Anode)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
6-2009
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
Rev B
Collector
20.80 (.819)
21.46 (.845)
052-6355
Collector
(Cathode)
5.38 (.212)
6.20 (.244)