APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. D G SO 2 T- 27 "UL Recognized" file # E145592 IS OTO P ® D APT58M80J Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 60 Continuous Drain Current @ TC = 100°C 36 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 3725 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 43 A 1 325 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 960 RθJC Junction to Case Thermal Resistance 0.13 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com 0.15 -55 150 °C/W °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m Rev C 8-2011 Min Characteristic 050-8111 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 800 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 43A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 800V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 0.87 0.08 4 -10 0.10 5 100 500 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 3 VGS = VDS, ID = 5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT58M80J Min Test Conditions VDS = 50V, ID = 43A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Typ 80 17550 300 1745 Max Unit S pF 825 VGS = 0V, VDS = 0V to 533V 410 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 533V, ID = 43A tr td(off) tf Turn-Off Delay Time 570 95 290 100 145 435 125 VGS = 0 to 10V, ID = 43A, VDS = 400V RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 MOSFET symbol showing the integral reverse p-n junction diode (body diode) Max Diode Forward Voltage trr Reverse Recovery Time ISD = 43A, VDD = 100V 3 Qrr Reverse Recovery Charge Unit 60 A G ISD = 43A, TJ = 25°C, VGS = 0V Peak Recovery dv/dt Typ D VSD dv/dt Min Test Conditions 325 S diSD/dt = 100A/μs, TJ = 25°C ISD ≤ 43A, di/dt ≤1000A/μs, VDD = 533V, TJ = 125°C 1.0 V ns μC 1100 42 10 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 4.03mH, RG = 2.2Ω, IAS = 43A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 050-8111 Rev C 8-2011 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT58M80J 250 V GS 100 = 10V T = 125°C 80 TJ = 25°C 150 100 TJ = 125°C 50 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) V TJ = -55°C 200 TJ = 150°C 0 5.5V 70 60 50 5V 40 30 20 4.5V 0 4V 0 NORMALIZED TO VGS = 10V @ 43A 1.5 1.0 0.5 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 250 200 TJ = -55°C 150 TJ = 25°C 100 TJ = 125°C 50 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 100 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 30,000 90 TJ = 25°C 70 TJ = 125°C 60 Ciss 10,000 TJ = -55°C 80 C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. 300 2.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 350 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 2.5 = 10, & 15V GS = 6, & 6.5V GS 10 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 3.0 V J 90 50 40 30 1,000 Coss 100 Crss 20 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 200 400 600 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 160V 10 VDS = 400V 8 6 VDS = 640V 4 2 0 0 350 ID = 43A 14 0 10 70 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 300 250 200 TJ = 25°C 150 TJ = 150°C 100 50 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev C 8-2011 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 10 050-8111 0 ISD, REVERSE DRAIN CURRENT (A) 0 APT58M80J 400 400 IDM 10 13μs 100μs 1ms Rds(on) 10ms 1 0.1 100ms Rds(on) 13μs 100μs 10 0.1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 1ms 10ms 100ms DC line TJ = 150°C TC = 25°C 1 Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line TJ = 125°C TC = 75°C 1 IDM 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 C 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.12 0.10 0.7 0.08 0.5 0.06 Note: P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t1 t2 0.02 0 t1 = Pulse Duration t 0.1 10-5 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 0.05 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) Rev C 8-2011 3.3 (.129) 3.6 (.143) 050-8111 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drai n * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) Gate 1.0