EMD12 / UMD12N Transistors Power management (dual digital transistors) EMD12 / UMD12N !External dimensions (Units : mm) !Features 1) Both the DTA144E and DTC144E in a EMT or UMT package. 0.22 (5) (6) (3) (2) R1 (2) 1.2 1.6 (1) 0.5 0.13 !Equivalent circuit (3) (4) 0.5 0.5 1.0 1.6 EMD12 (1) ROHM : EMT6 R2 Each lead has same dimensions UMT6 Marking D12 D12 Code T2R TR Basic ordering unit (pieces) 8000 3000 1.3 0.7 UMD12N EMT6 0.1Min. ROHM : UMT6 EIAJ : SC-88 0~0.1 EMD12 0.15 Type 0.9 2.1 !Package, marking, and packaging specifications Package 0.65 1.25 2.0 (3) (1) (2) (4) (5) (6) (6) (5) 0.2 (4) R1 0.65 UMD12N R2 Each lead has same dimensions !Absolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol VCC VIN Input voltage Output current Power dissipation Limits 50 Unit V 40 V −10 IC 100 IO 30 Pd 150(TOTAL) mA mA mW ∗1 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 120mW per element must not be exceeded. PNP type negative symbols have been omitted !Electrical characteristics (Ta=25°C) Parameter Input voltage Symbol Min. Typ. Max. Unit VI (off) − − 0.5 V VCC=5/−5V, IO=100/−100µA VO=0.3/−0.3V, IO=2/−2mA VI (on) 3 − − V Output voltage Input current VO (on) II − − − − 0.3 0.18 V mA Output current IO (off) − − 0.5 µA DC current gain GI 68 − − − Transition frequency Input resistance fT R1 − 32.9 250 47 − 61.1 MHz kΩ R2 / R1 0.8 1 1.2 − Resistance ratio ∗Transition frequency of the device. PNP type negative symbols have been omitted Conditions IO=10/−10mA, II=0.5/−0.5mA VI=5/−5V VCC=50/−50V, VI=0V IO=5/−5mA, VO=5/−5V VCE=10/−10V, IE=−5/5mA, f=100MHz ∗ − −