ROHM FMG9A

EMG9 / UMG9N / FMG9A
Transistors
Emitter common
(dual digital transistors)
EMG9 / UMG9N / FMG9A
!External dimensions (Units : mm)
!Features
1) Two DTC114E in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
(3)
(4)
(2)
(5)
(1)
0.5
0.13
!Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
1.2
1.6
0.5 0.5
1.0
1.6
0.22
EMG9
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : G9
2.0
(2)
(1)
1.3
(3)
(4)
0.2
0.65 0.65
UMG9N
(6)
The following characteristics apply to both the DTr1 and
DTr2.
1.25
0to0.1
0.7
0.15
0.1Min.
R2
(2)
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : G9
FMG9A
(1)
(5)
(1)
(4)
0.3
(5)/(6)
R2
(5) R1=10kΩ
R1 R2=10kΩ
DTr1
2.9
R1
DTr2
(4)
1.1
(4)
R2
(3)
0.8
R2
(1) R1=10kΩ
R1
R2=10kΩ
DTr1
(3)
R1
DTr2
(2)
0.95 0.95
1.9
(3)
FMG9A
(2)
EMG9 / UMG9N
0.9
2.1
!Equivalent circuit
1.6
!Absolute maximum ratings (Ta = 25°C)
Limits
Unit
VCC
50
V
0.3to0.6
Supply voltage
Input voltage
Output current
VIN
40
−10
IO
50
IC (Max.)
100
150 (TOTAL)
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
V
Abbreviated symbol : G9
mA
EMG9, UMG9N
Power
dissipation FMG9A
Pd
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55∼+150
˚C
mW
300 (TOTAL)
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
0to0.1
Symbol
0.15
Parameter
2.8
∗1
∗2
EMG9 / UMG9N / FMG9A
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter
Input voltage
Output voltage
Symbol
Min.
Typ.
Max.
VI (off)
−
−
0.5
VI (on)
3
−
−
VO (on)
−
0.1
0.3
V
II
−
−
0.88
mA
IO (off)
−
−
0.5
µA
VCC=50V, VI=0V
GI
30
−
−
−
VO=5V, IO=5mA
Input current
Output current
DC current gain
Unit
V
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=10mA
IO=10mA, II=0.5mA
VI=5V
Transition frequency
fT
−
250
−
MHz
Input resistance
R1
7
10
13
kΩ
−
Resistance ratio
R2/R1
0.8
1.0
1.2
−
−
∗
VCE=10mA, IE=−5mA, f=100MHz
∗
Transition frequency of the device
!Packaging specifications
Package
Type
Taping
Code
T2R
TR
T148
Basic ordering
unit (pieces)
8000
3000
3000
EMG9
UMG9N
FMG9A
!Electrical characteristic curves
10m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
20
10
5
2
Ta=−40˚C
25˚C
100˚C
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
Fig.1 Input voltage vs. output current
(ON characteristics)
1
lO/lI=20
500m
OUTPUT VOLTAGE : VO (on) (V)
2m
1m
500µ
Ta=100˚C
25˚C
−40˚C
200m
100m
50m
20m
10m
5m
2m
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
VO=5V
500
Ta=100˚C
25˚C
−40˚C
200µ
100µ
50µ
20µ
10µ
200
Ta=100˚C
25˚C
−40˚C
100
50
20
10
5
5µ
2
2µ
OUTPUT CURRENT : IO (A)
1m
100µ 200µ
1k
VCC=5V
5m
50
DC CURRENT GAIN : GI
100
1µ
0
0.5
1.0
1.5
2.0
2.5
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
3.0
1
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current