PD – 96114
IRF7805QPbF
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
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Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
A
D
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8
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7
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D
SO-8
T o p V ie w
Device Features
IRF7805Q
VDS
30V
RDS(on)
11mΩ
Qg
31nC
Qsw
11.5nC
Qoss
36nC
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
30
V
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 12
ID @ TA = 25°C
13
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
100
PD @TA = 25°C
Power Dissipation
2.5
ID @ TA = 70°C
e
e
PD @TA = 70°C
Power Dissipation
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
A
10
c
W
1.6
W/°C
°C
0.02
-55 to + 150
Thermal Resistance
Parameter
RθJL
RθJA
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h
Junction-to-Ambient eh
Junction-to-Drain Lead
Typ.
Max.
Units
–––
20
°C/W
–––
50
1
07/23/07
IRF7805QPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
RDS(on)
VGS(th)
h
Static Drain-to-Source On-Resistanceh
Gate Threshold Voltage h
IDSS
Drain-to-Source Leakage Current
BVDSS
Drain-to-Source Breakdown Voltage
–––
–––
V
VGS = 0V, ID = 250µA
–––
1.0
9.2
–––
11
3.0
mΩ
V
VGS = 4.5V, ID = 7.0A
VDS = VGS, ID = 250µA
–––
–––
–––
–––
70
10
µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
150
100
Qg
Gate-to-Source Reverse Leakage
Total Gate Charge
–––
–––
–––
22
-100
31
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
–––
–––
3.7
1.4
–––
–––
–––
–––
6.8
8.2
–––
11.5
Qoss
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
3.0
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
0.5
–––
–––
–––
16
20
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
38
16
–––
–––
h
Qgs1
Qgs2
Qgd
Qsw
h
h
Conditions
30
nA
VDS = 24V, VGS = 0V, TJ = 100°C
VGS = 12V
VGS = -12V
VGS = 5.0V
nC
VDS = 16V
ID = 7.0A
3.6
nC
VDS = 16V, VGS = 0V
1.7
–––
–––
Ω
ns
d
VDD = 16V, VGS = 4.5V
ID = 7.0A
e
RG= 2Ω
Resistive Load
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
Qrr
(Body Diode)
Diode Forward Voltage
Reverse Recovery Charge
c
h
Qrr(s)
Reverse Recovery Charge
(with Parallel Schottky)
f
f
–––
–––
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 7.0A, VGS = 0V
di/dt = 700A/µs
–––
–––
106
–––
–––
88
1.2
V
–––
ns
–––
nC
–––
–––
55
Conditions
MOSFET symbol
2.5
VDS = 16V, VGS = 0V, IS = 7.0A
di/dt = 700A/µs (with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7.0A
Notes:
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Rθ is measured at TJ of approximately 90°C.
Devices are 100% tested to these parameters.
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IRF7805QPbF
Typical Characteristics
Fig 1. Normalized On-Resistance vs. Temperature
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
ISD , Reverse Drain Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
V GS = 0 V
0.1
0.4
0.5
0.6
0.7
0.8
0.9
VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode Forward Voltage
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.1
0.001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
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Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
3
IRF7805QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
4
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IRF7805QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
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