CY7C1041CV33:4-Mbit (256 K × 16) Static RAM Datasheet.pdf

CY7C1041CV33
4-Mbit (256 K × 16) Static RAM
4-Mbit (256 K × 16) Static RAM
Features
Functional Description
■
Temperature ranges
❐ Industrial: –40 °C to 85 °C
The CY7C1041CV33 is a high performance CMOS static RAM
organized as 262,144 words by 16 bits.
■
Pin and function compatible with CY7C1041BV33
■
High speed
❐ tAA = 8 ns
■
Low active power
❐ 360 mW (max)
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (/IO0 through I/O7), is written into the location
specified on the address pins (A0 through A17). If Byte High
Enable (BHE) is LOW, then data from IO pins (I/O8 through I/O15)
is written into the location specified on the address pins (A0
through A17).
■
2.0 V data retention
■
Automatic power down when deselected
■
TTL-compatible inputs and outputs
■
Easy memory expansion with CE and OE features
■
Available in Pb-free 44-pin TSOP II package
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on I/O0 to I/O7. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O8 to I/O15. For more information, see the Truth
Table on page 10 for a complete description of Read and Write
modes.
The input and output pins (I/O0 through I/O15) are placed in a
high impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW
and WE LOW).
For a complete list of related documentation, click here.
Logic Block Diagram
SENSE AMPS
A0
A1
A2
A3
A4
A5
A6
A7
A8
ROW DECODER
INPUT BUFFER
256K x 16
RAM Array
I/O0–I/O7
I/O8–I/O15
•
BHE
WE
CE
OE
BLE
A16
A17
A14
A15
A13
A12
A9
Cypress Semiconductor Corporation
Document Number: 38-05134 Rev. *Q
A10
A11
COLUMN DECODER
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised March 27, 2015
CY7C1041CV33
Contents
Selection Guide ................................................................ 3
Pin Configurations ........................................................... 3
Pin Definitions .................................................................. 4
Maximum Ratings ............................................................. 5
Operating Range ............................................................... 5
Electrical Characteristics ................................................. 5
Capacitance ...................................................................... 6
Thermal Resistance .......................................................... 6
AC Test Loads and Waveforms ....................................... 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 10
Ordering Information ...................................................... 11
Ordering Code Definitions ......................................... 11
Document Number: 38-05134 Rev. *Q
Package Diagram ............................................................ 12
Acronyms ........................................................................ 13
Document Conventions ................................................. 13
Units of Measure ....................................................... 13
Document History Page ................................................. 14
Sales, Solutions, and Legal Information ...................... 16
Worldwide Sales and Design Support ....................... 16
Products .................................................................... 16
PSoC® Solutions ...................................................... 16
Cypress Developer Community ................................. 16
Technical Support ..................................................... 16
Page 2 of 17
CY7C1041CV33
Selection Guide
Description
-8
Unit
8
ns
Maximum Operating Current
100
mA
Maximum CMOS Standby Current
10
mA
Maximum Access Time
Pin Configurations
Figure 1. 44-pin TSOP II pinout (Top View) [1]
A0
A1
A2
A3
A4
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
IO5
IO6
IO7
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
OE
BHE
BLE
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
IO10
IO9
IO8
NC
A14
A13
A12
A11
A10
Note
1. NC pins are not connected on the die.
Document Number: 38-05134 Rev. *Q
Page 3 of 17
CY7C1041CV33
Pin Definitions
Pin Name TSOP Pin Number
I/O Type
Description
A0–A17
1–5, 18–27, 42–44
Input
I/O0–I/O15
7–10,13–16,
29–32, 35–38
Input or Output
NC
28
No Connect
WE
17
Input or Control
Write Enable Input, Active LOW. When selected LOW, a write is
conducted. When deselected HIGH, a read is conducted.
CE
6
Input or Control
Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH,
deselects the chip.
BHE, BLE
40, 39
Input or Control
Byte Write Select Inputs, Active LOW. BHE controls I/O15–I/O8, BLE
controls I/O7–I/O0.
OE
41
Input or Control
Output Enable, Active LOW. Controls the direction of the I/O pins. When
LOW, the IO pins are allowed to behave as outputs. When deasserted HIGH,
the I/O pins are tri-stated and act as input data pins.
VSS
12, 34
Ground
VCC
11, 33
Power Supply
Document Number: 38-05134 Rev. *Q
Address Inputs. Used to select one of the address locations.
Bidirectional Data IO lines. Used as input or output lines depending on
operation.
No Connects. Not connected to the die.
Ground for the Device. Connected to ground of the system.
Power Supply Inputs to the Device.
Page 4 of 17
CY7C1041CV33
DC Input Voltage [2] ............................ –0.5 V to VCC + 0.5 V
Maximum Ratings
Current into Outputs (LOW) ........................................ 20 mA
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Static Discharge Voltage
(MIL-STD-883, Method 3015) ................................. > 2001 V
Storage Temperature ............................... –65 C to +150 C
Latch Up Current ................................................... > 200 mA
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Operating Range
Supply Voltage
on VCC Relative to GND [2] ..........................–0.5 V to +4.6 V
Range
DC Voltage Applied to Outputs
in High Z State [2] ................................ –0.5 V to VCC + 0.5 V
Ambient Temperature (TA)
VCC
–40 C to +85 C
3.3 V  10%
Industrial
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
VOH
Output HIGH Voltage
VCC = Min, IOH = –4.0 mA
VOL
Output LOW Voltage
VCC = Min, IOL = 8.0 mA
VIH
Input HIGH Voltage
[2]
Unit
Min
Max
2.4
–
V
–
0.4
V
2.0
VCC + 0.3
V
–0.3
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
A
IOZ
Output Leakage Current
GND < VOUT < VCC, Output disabled
–1
+1
A
ICC
VCC Operating Supply Current
VCC = Max, f = fMAX = 1/tRC
–
100
mA
ISB1
Automatic CE Power Down
Current – TTL Inputs
Max VCC, CE > VIH,
VIN > VIH or VIN < VIL, f = fMAX
–
40
mA
ISB2
Automatic CE Power Down
Current – CMOS Inputs
Max VCC, CE > VCC – 0.3 V,
VIN > VCC – 0.3 V, or VIN < 0.3 V, f = 0
–
10
mA
VIL
Input LOW Voltage
-8
Note
2. VIL (min) = –2.0 V and VIH(max) = VCC + 0.5 V for pulse durations of less than 20 ns.
Document Number: 38-05134 Rev. *Q
Page 5 of 17
CY7C1041CV33
Capacitance
Parameter [3]
Description
Test Conditions
Max
Unit
8
pF
8
pF
Test Conditions
TSOP II
Unit
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51
42.96
C/W
10.75
C/W
TA = 25 C, f = 1 MHz, VCC = 3.3 V
CIN
Input Capacitance
COUT
Output Capacitance
Thermal Resistance
Parameter [3]
Description
JA
Thermal Resistance
(Junction to Ambient)
JC
Thermal Resistance
(Junction to Case)
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms [4]
10-ns devices:
12-, 15-, 20-ns devices:
Z = 50 
50 
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
R 317
3.3 V
OUTPUT
30 pF*
OUTPUT
R2
351
30 pF*
1.5 V
(b)
(a)
High Z characteristics:
3.0 V
GND
ALL INPUT PULSES
90%
90%
10%
10%
Rise Time: 1 V/ns
(c)
R 317
3.3 V
Fall Time: 1 V/ns
OUTPUT
R2
351
5 pF
(d)
Notes
3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High Z) for 10-ns parts are tested using the load conditions shown in Figure 2 (a). All other speeds are tested using the Thevenin load shown
in Figure 2 (b). High Z characteristics are tested for all speeds using the test load shown in Figure 2 (d).
Document Number: 38-05134 Rev. *Q
Page 6 of 17
CY7C1041CV33
Switching Characteristics
Over the Operating Range
Parameter [5]
Description
-8
Unit
Min
Max
100
–
s
Read Cycle
tpower[6]
VCC(Typical) to the First Access
tRC
Read Cycle Time
8
–
ns
tAA
Address to Data Valid
–
8
ns
tOHA
Data Hold from Address Change
3
–
ns
tACE
CE LOW to Data Valid
–
8
ns
tDOE
OE LOW to Data Valid
–
5
ns
0
–
ns
–
4
ns
3
–
ns
–
4
ns
0
–
ns
tLZOE
OE LOW to Low
Z[7]
Z[7, 8]
tHZOE
OE HIGH to High
tLZCE
CE LOW to Low Z[7]
Z[7, 8]
tHZCE
CE HIGH to High
tPU
CE LOW to Power Up
tPD
CE HIGH to Power Down
–
8
ns
tDBE
Byte Enable to Data Valid
–
5
ns
tLZBE
Byte Enable to Low Z
0
–
ns
Byte Disable to High Z
–
5
ns
tHZBE
Write Cycle
[9, 10]
tWC
Write Cycle Time
8
–
ns
tSCE
CE LOW to Write End
6
–
ns
tAW
Address Setup to Write End
6
–
ns
tHA
Address Hold from Write End
0
–
ns
tSA
Address Setup to Write Start
0
–
ns
tPWE
WE Pulse Width
6
–
ns
tSD
Data Setup to Write End
4
–
ns
tHD
Data Hold from Write End
0
–
ns
tLZWE
WE HIGH to Low Z[7]
3
–
ns
–
4
ns
6
–
ns
[7, 8]
tHZWE
WE LOW to High Z
tBW
Byte Enable to End of Write
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, and input pulse levels of 0 to 3.0 V.
6. tPOWER gives the minimum amount of time that the power supply is at typical VCC values until the first memory access is performed.
7. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.
8. tHZOE, tHZCE, tHZBE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of Figure 2 on page 6. Transition is measured 500 mV from steady state
voltage.
9. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW, and BHE/BLE LOW. CE, WE, and BHE/BLE must be LOW to initiate a write.
The transition of these signals terminate the write. The input data setup and hold timing is referenced to the leading edge of the signal that terminates the write.
10. The minimum Write cycle time for Write Cycle No. 3 (WE Controlled, OE LOW) is the sum of tSD and tHZWE.
Document Number: 38-05134 Rev. *Q
Page 7 of 17
CY7C1041CV33
Switching Waveforms
Figure 3. Read Cycle No. 1 (Address Transition Controlled) [11, 12]
tRC
RC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Figure 4. Read Cycle No. 2 (OE Controlled) [12, 13]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
tLZOE
BHE, BLE
tHZCE
tDBE
tLZBE
DATA OUT
HIGH IMPEDANCE
tLZCE
VCC
SUPPLY
CURRENT
tHZBE
DATA VALID
HIGH
IMPEDANCE
tPD
tPU
50%
50%
ICC
ISB
Notes
11. Device is continuously selected. OE, CE, BHE, and/or BLE = VIL.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
Document Number: 38-05134 Rev. *Q
Page 8 of 17
CY7C1041CV33
Switching Waveforms (continued)
Figure 5. Write Cycle No. 1 (CE Controlled) [14, 15]
tWC
ADDRESS
tSA
tSCE
CE
tAW
tHA
tPWE
WE
t BW
BHE, BLE
tSD
tHD
DATA IO
Figure 6. Write Cycle No. 2 (BLE or BHE Controlled)
tWC
ADDRESS
BHE, BLE
tSA
tBW
tAW
tHA
tPWE
WE
tSCE
CE
tSD
tHD
DATA IO
Notes
14. Data IO is high impedance if OE, BHE, and/or BLE = VIH.
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
Document Number: 38-05134 Rev. *Q
Page 9 of 17
CY7C1041CV33
Switching Waveforms (continued)
Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW) [16]
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
tBW
BHE, BLE
tHZWE
DATA IO
tSD
tHD
Note 17
tLZWE
Notes
16. The minimum write cycle pulse width should be equal to the sum of tSD and tHZWE.
17. During this time I/Os are in output state. Do not apply input signal.
Document Number: 38-05134 Rev. *Q
Page 10 of 17
CY7C1041CV33
Truth Table
CE
OE
WE
BLE
BHE
H
X
X
X
X
High Z
High Z
Power Down
Standby (ISB)
L
L
H
L
L
Data Out
Data Out
Read – All Bits
Active (ICC)
L
H
Data Out
High Z
Read – Lower Bits Only
Active (ICC)
H
L
High Z
Data Out
Read – Upper Bits Only
Active (ICC)
L
L
Data In
Data In
Write – All Bits
Active (ICC)
L
H
Data In
High Z
Write – Lower Bits Only
Active (ICC)
H
L
High Z
Data In
Write – Upper Bits Only
Active (ICC)
L
X
L
I/O0–I/O7
I/O8–I/O15
Mode
Power
L
H
H
X
X
High Z
High Z
Selected, Outputs Disabled
Active (ICC)
L
X
X
H
H
High Z
High Z
Selected, Outputs Disabled
Active (ICC)
Document Number: 38-05134 Rev. *Q
Page 11 of 17
CY7C1041CV33
Ordering Information
Cypress offers other versions of this type of product in many different configurations and features. The below table contains only the
list of parts that are currently available.For a complete listing of all options, visit the Cypress website at www.cypress.com and refer
to the product summary page at http://www.cypress.com/products or contact your local sales representative.
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.
Speed
(ns)
8
Ordering Code
CY7C1041CV33-8ZSXI
Package
Diagram
Package Type
51-85087 44-pin TSOP Type II (Pb-free)
Operating
Range
Industrial
Please contact your local Cypress sales representative for availability of these parts
Ordering Code Definitions
CY 7C
1
04
1
C V33 - 8
ZS X
I
Temperature Range:
I = Industrial
X = Pb-free; X Absent = Leaded
Package Type:
ZS = 44-pin TSOP II
Speed Grade: 8 = 8 ns
V33 = 3.0 V to 3.6 V
Process Technology: C  150 nm
Data width: × 16-bits
Density: 04 = 4-Mbit
Fast Asynchronous SRAM
Marketing Code: 7C = SRAMs
Company ID: CY = Cypress
Document Number: 38-05134 Rev. *Q
Page 12 of 17
CY7C1041CV33
Package Diagram
Figure 8. 44-pin TSOP Z44-II Package Outline, 51-85087
51-85087 *E
Document Number: 38-05134 Rev. *Q
Page 13 of 17
CY7C1041CV33
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CE
Chip Enable
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
I/O
Input/Output
MHz
megahertz
OE
Output Enable
µA
microampere
SRAM
Static Random Access Memory
µs
microsecond
TSOP
Thin Small Outline Package
mA
milliampere
mm
millimeter
ms
millisecond
mW
milliwatt
TTL
Transistor-Transistor Logic
WE
Write Enable
Document Number: 38-05134 Rev. *Q
Symbol
Unit of Measure
ns
nanosecond

ohm
%
percent
pF
picofarad
V
volt
W
watt
Page 14 of 17
CY7C1041CV33
Document History Page
Document Title: CY7C1041CV33, 4-Mbit (256 K × 16) Static RAM
Document Number: 38-05134
Rev.
ECN No.
Issue Date
Orig. of
Change
**
109513
12/13/01
HGK
New data sheet
Description of Change
*A
112440
12/20/01
BSS
Updated 51-85106 from revision *A to *C
*B
112859
03/25/02
DFP
Added CY7C1042CV33 in BGA package
Removed 1042 BGA option pin ACC Final Data Sheet
*C
116477
09/16/02
CEA
Add applications foot note to data sheet
*D
119797
10/21/02
DFP
Added 20-ns speed bin
*E
262949
See ECN
RKF
1) Added Lead (Pb)-Free parts in the Ordering info (Page #9)
2) Added Automotive Specs to Datasheet
*F
361795
See ECN
SYT
Added Pb-Free offerings in the Ordering Information
*G
435387
See ECN
NXR
Removed -8 Speed bin from Product offering.
Corrected typo in description for BHE/BLE in pin definitions table on Page# 3
corrected their Pin name from OE2 to OE.
Included the Maximum Ratings for Static Discharge Voltage and Latch up
Current.
Changed the description of IIX current from Input Load Current to
Input Leakage Current
Added note# 4 on page# 4
Updated the Ordering Information table
*H
499153
See ECN
NXR
Added Automotive-A Operating Range
Changed tpower value from 1 s to 100 s
Updated Ordering Information table
*I
2104110
See ECN
VKN/AESA Added Automotive-E specs for 12 ns speed
Updated Ordering Information table
*J
2897141
03/22/10
AJU/VIVG Updated Ordering Information (Removed inactive parts).
Updated Package Diagram.
*K
3072834
11/12/2010
PRAS
Updated Ordering Information:
Removed inactive parts.
Added Ordering Code Definitions.
*L
3186840
03/03/2011
PRAS
Updated Features.
Updated Selection Guide (Added -8 ns speed grade devices and removed -10
ns, -12 ns, -15 ns and -20 ns speed grade devices).
Removed Figure “48-Ball FBGA Pinout (Top View)” and renamed Figure
“44-Pin SOJ/TSOP II (Top View)” as “44-pin TSOP II (Top View)” in Pin Configurations.
Updated Pin Definitions (Deleted the column “BGA Pin Number” and renamed
the column “SOJ, TSOP Pin Number” as “TSOP Pin Number”.
Updated Operating Range
Updated Electrical Characteristics (Added -8 ns speed grade devices and
removed -10 ns, -12 ns, -15 ns and -20 ns speed grade devices).
Updated Thermal Resistance (Deleted the columns SOJ and FBGA).
Updated Switching Characteristics (Added -8 ns speed grade devices and
removed -10 ns, -12 ns, -15 ns and -20 ns speed grade devices).
Updated Ordering Information (Added new speed bin (-8 ns speed grade
devices) and removed -10 ns, -12 ns, -15 ns and -20 ns speed grade devices).
Added Acronyms and Units of Measure.
Dislodged Automotive information to new datasheet (001-67307)
Removed SOJ and FBGA package related information in all instances in the
document.
Updated to new template.
Document Number: 38-05134 Rev. *Q
Page 15 of 17
CY7C1041CV33
Document History Page (continued)
Document Title: CY7C1041CV33, 4-Mbit (256 K × 16) Static RAM
Document Number: 38-05134
Rev.
ECN No.
Issue Date
Orig. of
Change
Description of Change
*M
3199948
03/18/2011
PRAS
Updated Features (Updated Operating Temperature Range from Commercial
to Industrial).
Updated Operating Range (Updated Operating Temperature Range from
Commercial to Industrial).
Updated Ordering Information (Updated Operating Temperature Range from
Commercial to Industrial).
*N
3266084
05/28/2011
PRAS
Updated Functional Description (Removed “For best practice
recommendations, refer to the Cypress application note AN1064, SRAM
System Guidelines.”).
*O
4315741
03/20/2014
VINI
Updated Package Diagram:
spec 51-85087 – Changed revision from *C to *E.
Updated to new template.
Completing Sunset Review.
*P
4578447
01/16/2015
VINI
Added related documentation hyperlink in page 1.
Updated Switching Waveforms:
Added Note 16 and referred the same note in Figure 7.
*Q
4702949
03/27/2015
VINI
Updated Switching Waveforms:
Added Note 17 and referred the same note in DATA IO in Figure 7.
Completing Sunset Review.
Document Number: 38-05134 Rev. *Q
Page 16 of 17
CY7C1041CV33
Sales, Solutions, and Legal Information
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Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
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the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 38-05134 Rev. *Q
Revised March 27, 2015
All products and company names mentioned in this document may be the trademarks of their respective holders.
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