BOURNS CDNBS08-SLVU2.8-8

PL
IA
NT
Features
S
CO
M
■
*R
oH
■
■
■
■
Applications
Lead free device (RoHS compliant*)
Protects up to 4 I/O ports
Bidirectional configuration
ESD protection
Low capacitance 6 pF
■
■
■
■
■
Ethernet – 10/100/1000 Base T
Personal digital assistant
Handheld electronics
Cellular phones
Video cards
CDNBS08-SLVU2.8-8 – Low Capacitance TVS Array
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
8
7
6
5
1
2
3
4
Bourns offers Transient Voltage Suppressor Array combination diodes for surge and
ESD protection applications in an 8 Lead Narrow Body SOIC package size format.
Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard
pick and place equipment and their flat configuration minimizes roll away.
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Nom.
Max.
Unit
Peak Pulse Current (tp = 8/20 µs)
I PP
30
A
Peak Pulse Power (tp = 8/20 µs)1
PPP
600
W
Working Voltage
VWM
Breakdown Voltage @ 1 mA
VBR
Leakage Current @ VWM
ID
Capacitance @ 0 V, 1 MHz
C
Snapback Voltage
2.8
3.0
V
V
1.0
6
µA
pF
2.8
V
@ IPP = 2 A
VC
5.5
V
@ IPP = 5 A
VC
8.5
V
@ IPP = 24 A
VC
15
V
@ IPP = 30 A
VC
17
V
Clamping Voltage
Note:
1. See Peak Pulse Power vs. Pulse Time.
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Operating Temperature
Storage Temperature
Symbol
Min.
Nom.
Max.
Unit
TJ
-55
+25
+150
°C
TSTG
-55
+25
+150
°C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDNBS08-SLVU2.8-8 – Low Capacitance TVS Array
Mechanical Characteristics
This is a molded JEDEC Narrow Body SO-8 package with lead free 100 % Sn plating on the lead frame. It weighs approximately 15 mg and
has a flammability rating of UL 94V-0.
Product Dimensions
Recommended Footprint
A
A
B
F
B
H
C
D
G
C
E
DIMENSIONS = MILLIMETERS
(INCHES)
D
Dimensions
E
Dimensions
A
1.143 - 1.397
(0.045 - 0.055)
B
0.635 - 0.889
(0.025 - 0.035)
A
4.80 - 5.00
(0.189 - 0.196)
C
B
3.80 - 4.00
(0.150 - 0.157)
D
3.937 - 4.191
(0.155 - 0.165)
C
5.80 - 6.20
(0.229 - 0.244)
E
1.016 - 1.27
(0.040 - 0.050)
D
1.35 - 1.75
(0.054 - 0.068)
E
0.10 - 0.25
(0.004 - 0.008)
F
0.25 - 0.50
(0.010 - 0.019)
G
0.40 - 1.250
(0.016 - 0.049)
H
0.18 - 0.25
(0.007 - 0.009)
How To Order
CD NBS08 - SLVU 2.8 - 8
Common Code
CD = Chip Diode
Package
NBS08 = Narrow Body SOIC8 Package
Model
SLVU = Low Capacitance TVS Array
Working Peak Reverse Voltage
2.8 = 2.8 VRWM (Volts)
Number of Diodes
Typical Part Marking
CDNBS08-SLVU2.8-8 ..........................................................
6.223
Min.
(0.245)
SL8
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDNBS08-SLVU2.8-8 – Low Capacitance TVS Array
Packaging
The surface mount product is packaged in a 8 mm x 4 mm Tape and Reel format per EIA-481 standard.
TOP SIDE VIEW
(INTO COMPONENT POCKET)
4.0 ± 0.1
(.16 ± .004)
0.3 ± 0.05
(.01 ± .002)
1.5 ± 0.1/-0
(.06 ± .004/-0)
DIA.
2.0 ± 0.05
(.08 ± .002)
R
1.75 ± 0.1
(.07 ± .004)
0.3
MAX.
(0.01)
12.0 ± 0.3
(.47 ± .01)
2.1 ± 0.1
(.083 ± .004)
5.5 ± 0.3
(.22 ± .01)
6.4 ± 0.1
(.252 ± .004)
9.0 ± 0.1
(.354 ± .004)
8.0 ± 0.3
(.31 ± .01)
ORIENTATION
OF COMPONENT
IN POCKET
R 0.25 TYP.
(0.010)
BACKSIDE FACING UP
Block Diagram
Device Pinout
8
7
6
5
Pin
1
2
3
4
5
6
7
8
1
2
3
4
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Bidirectional
Common Mode
Line 1
GND
GND
Line 4
Line 3
GND
GND
Line 2
Bidirectional
Differential
Mode
Line Pair 1
Line Pair 1
Line Pair 2
Line Pair 2
Line Pair 4
Line Pair 4
Line Pair 3
Line Pair 3
CDNBS08-SLVU2.8-8 – Low Capacitance TVS Array
Performance Graphs
Peak Pulse Power vs Pulse Time
Pulse Wave Form
120
IPP – Peak Pulse Current (% of IPP)
PPP – Peak Pulse Current (W)
10,000
600 W, 8/20 µs Waveform
1,000
100
Test Waveform Parameters
tt = 8 µs
td = 20 µs
tt
100
80
et
60
40
td = t|IPP/2
20
0
10
0.01
1
10
100
1,000
10,000
0
5
10
15
20
25
t – Time (µs)
td – Pulse Duration (µs)
Power Derating Curve
% of Rated Power
100
Peak Pulse Power
8/20 µs
80
60
40
20
Average Power
0
0
25
50
75
100
125
150
TL – Lead Temperature (°C)
Reliable Electronic Solutions
Asia-Pacific:
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe:
Tel: +41-41 768 5555 • Fax: +41-41 768 5510
The Americas:
Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
REV. 05/06
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
30