SEMIPOWER SWP634

SAMWIN
SW634
N-channel MOSFET
Features
TO-220F
TO-220
BVDSS : 250V
ID
■ High ruggedness
■ RDS(ON) (Max 0.45 Ω)@VGS=10V
■ Gate Charge (Typ 20nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
: 9A
RDS(ON) : 0.45ohm
1
2
1
3
2
2
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching mode power appliances.
3
Order Codes
Item
1
2
Sales Type
SW P 634
SW F 634
Marking
SW634
SW634
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
250
Unit
V
9.0
9.0*
A
Continuous Drain Current (@TC=100oC)
5.2
5.2*
A
VGS
Gate to Source Voltage
EAS
Single pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak diode Recovery dv/dt
TL
TO-220F
Continuous Drain Current (@TC=25oC)
Drain current pulsed
TSTG, TJ
TO-220
Drain to Source Voltage
IDM
PD
Value
Parameter
(note 1)
Total power dissipation (@TC
Derating Factor above
36
A
± 30
V
(note 2)
200
mJ
(note 1)
7.4
mJ
(note 3)
4.8
V/ns
=25oC)
25oC
Operating Junction Temperature & Storage Temperature
74
38*
W
0.78
0.3
W/oC
-55 ~ + 150
oC
300
oC
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Mar. 2011. Rev. 2.0
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
1.7
TO-220F
3.33
0.5
62.5
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Unit
oC/W
oC/W
oC/W
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SAMWIN
SW634
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
250
-
-
V
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
-
0.35
-
V/oC
-
1
uA
Drain to source leakage current
VDS=250V, VGS=0V
-
IDSS
VDS=200V, TC=125oC
-
-
20
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
-
-
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-
-
-100
nA
2.0
-
4.0
V
0.35
0.45
Ω
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 4.5A
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
32
td(on)
Turn on delay time
38
tr
td(off)
tf
Rising time
Turn off delay time
1220
VGS=0V, VDS=25V, f=1MHz
130
38
VDS=125V, ID=9.0A, RG=25Ω
pF
ns
150
Fall time
80
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
20
VDS=200V, VGS=10V, ID=9A
34
5
nC
10
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
-
9
A
-
-
36
A
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=9A, VGS=0V
-
-
1.5
V
Trr
Reverse recovery time
-
170
-
ns
Qrr
Breakdown voltage temperature
IS=9A, VGS=0V,
dIF/dt=100A/us
-
0.85
-
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 4.5mH, IAS = 9A, VDD = 50V, RG=50Ω, Starting TJ = 25oC
3.
ISD ≤ 9A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
2/7
SAMWIN
SW634
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
25 C
0
10
o
-55 C
،‫ ط‬Notes :
1. VDS = 30V
،‫ ط‬Notes :
1. 250¥‫ى‬s Pulse Test
2. TC = 25،‫ة‬
2. 250¥‫ى‬s Pulse Test
-1
10
-1
10
0
2
1
10
10
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
IDR, Reverse Drain Current [A]
RDS(ON),
Drain-Source On-Resistance [¥‫]ط‬
2.0
1.5
1.0
VGS = 10V
0.5
VGS = 20V
1
10
0
10
150،‫ة‬
،‫ ط‬Notes :
1. VGS = 0V
2. 250¥‫ى‬s Pulse Test
،‫ ط‬Note : TJ = 25،‫ة‬
-1
0.0
0
6
12
18
10
24
0.2
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
1250
12
Coss=Cds+Cgd
Crss=Cgd
،‫ ط‬Notes :
1. VGS = 0V
1000
Coss
2. f=1MHz
750
Ciss
500
VGS, Gate-Source Voltage [V]
Ciss=Cgs+Cgd(Cds=shorted)
Capacitance [pF]
25،‫ة‬
VDS = 200V
10
VDS = 125V
VDS = 50V
8
6
4
250
2
،‫ ط‬Note : ID = 10A
Crss
0
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
35
40
0
0
5
10
15
20
25
QG, Total Gate Charge [nC]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
3/7
SAMWIN
SW634
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
3.0
RDS(on), (Normalized)
1.1
1.0
،‫ ط‬Notes :
1. VGS = 0 V
0.9
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2. ID = 250 ¥‫ى‬A
0.8
-100
2.5
2.0
1.5
1.0
،‫ ط‬Notes :
1. VGS = 10 V
0.5
2. ID = 4.5 A
-50
0
50
100
150
0.0
-100
200
-50
0
50
100
o
TJ, Junction Temperature [ C]
150
200
o
TJ, Junction Temperature [ C]
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
2
10
10
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
ID' Drain Current [A]
8
6
4
100 s
1
10
1 ms
10 ms
DC
0
10
،‫ ط‬Notes :
o
1. TC = 25 C
2
o
2. TJ = 150 C
3. Single Pulse
0
25
-1
10
50
75
100
125
0
1
10
150
2
10
o
10
3
10
VDS, Drain-Source Voltage [V]
TC' Case Temperature [ C]
Fig. 11. Transient thermal response curve
1
Z¥èJC (t), Thermal Response
10
D=0.5
0
10
0.2
،‫ ط‬Notes :
1. Z¥èJC(t) = 1.60 ،‫ة‬/W Max.
0.1
2. Duty Factor, D=t1/t2
0.05
3. TJM - TC = PDM * Z¥èJC(t)
0.02
0.01
-1
10
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t1, Square Wave Pulse Duration [sec]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
4/7
SAMWIN
SW634
Fig. 12. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
VDS
QGD
QGS
DUT
VGS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
VDS
RL
RG
90%
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
td(off)
tr
tON
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
1
EAS =
L
BVDSS
IAS
BVDSS - VDD
IAS
VDS
RG
2
BVDSS
L X IAS2 X
VDD
ID(t)
10VIN
DUT
VDS(t)
tp
time
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5/7
SAMWIN
SW634
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
+ V
DS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
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6/7
SAMWIN
SW634
REVISION HISTORY
Revision No.
Changed Characteristics
Responsible
Date
Issuer
REV 1.0
Origination, First Release
Alice Nie
2007.12.05
XZQ
REV 2.0
Updated the format of datasheet and added
Order Codes.
Alice Nie
2011.03.24
XZQ
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