PD- 91499B
IRLL014N
HEXFET® Power MOSFET
l
l
l
l
l
l
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.14Ω
G
ID = 2.0A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
2.8
2.0
1.6
16
2.1
1.0
8.3
± 16
32
2.0
0.1
7.2
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
1/25/99
IRLL014N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
–––
–––
1.0
2.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.015
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.5
1.1
3.0
5.1
4.9
14
2.9
230
66
30
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.14
VGS = 10V, ID = 2.0A
0.20
Ω
VGS = 5.0V, ID = 1.2A
0.28
VGS = 4.0V, ID = 1.0A
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 1.0A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
14
ID = 2.0A
1.7
nC
VDS = 44V
4.4
VGS = 10V, See Fig. 6 and 9
–––
VDD = 28V
–––
ID = 2.0A
ns
–––
RG = 6.0Ω
–––
RD = 14Ω, See Fig. 10
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 1.3
showing the
A
integral reverse
––– ––– 16
p-n junction diode.
––– ––– 1.0
V
TJ = 25°C, IS = 2.0A, VGS = 0V
––– 41
61
ns
TJ = 25°C, I F = 2.0A
––– 73 110
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 4.0mH
ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, I AS = 4.0A. (See Figure 12)
2
www.irf.com
IRLL014N
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOT TOM 3.0V
10
3.0V
1
0.1
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, D rain-to-Source C urrent (A )
I D , D rain-to-Source C urrent (A)
TO P
20 µ s P U LS E W ID TH
TJ = 2 5°C
A
1
10
10
3.0 V
2 0µ s P U L S E W ID TH
TJ = 15 0°C
A
1
100
0.1
1
V D S , D rain-to-S ourc e V oltage (V )
2.0
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e
(N o rm alize d)
I D , D rain-to-So urce C urren t (A )
100
TJ = 25 °C
T J = 1 50 °C
V DS = 25V
2 0 µ s P UL S E W ID TH
1
3.0
4.0
5.0
6.0
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
100
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
10
10
V D S, D rain-to-S ource V oltage (V )
7.0
A
I D = 2.0 A
1.5
1.0
0.5
V G S = 1 0V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , J unc tion T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLL014N
V GS
C is s
C rs s
C o ss
20
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
I D = 2.0 A
V D S = 4 4V
V D S = 2 8V
16
C iss
300
C , Capacitance (pF)
=
=
=
=
V G S , G ate-to-S ource V oltage (V )
400
12
200
C oss
100
C rss
0
10
4
FO R TE S T C IR C U IT
S E E FIG U R E 9
0
A
1
8
100
0
V D S , D rain-to-S ourc e V oltage (V )
3
6
9
12
A
15
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I D , D rain Current (A )
I S D , R everse Drain C urrent (A )
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
10
TJ = 1 50 °C
TJ = 2 5°C
1
10µ s
10
1 00µs
1m s
1
10m s
V G S = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.6
T A = 25 °C
T J = 15 0°C
S ing le P u lse
0.1
1
A
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
www.irf.com
IRLL014N
RD
VDS
QG
10V
VGS
QGS
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Therm al R esponse (Z thJ A )
1000
100
D = 0.5 0
0 .2 0
0 .1 0
10
0 .0 5
PD M
0 .0 2
t
0 .0 1
1
1
t2
N ote s:
1 . D u ty fac to r D = t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
0.1
0.00001
1
/ t
2
2 . P e a k TJ = P D M x Z th J A + T A
0.0001
0.001
0.01
0.1
1
10
100
A
1000
t 1 , R e cta n g u lar P u lse D u ra tio n (se c )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRLL014N
1 5V
L
VD S
D .U .T
RG
IA S
10V
D R IV E R
+
- VD D
A
0.0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
E A S , S ingle Pulse Avalanc he E nergy (m J)
80
TO P
B OTTOM
ID
1 .8 A
3 .2 A
4.0A
60
40
20
0
V D D = 25 V
25
50
A
75
100
125
150
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
6
www.irf.com
IRLL014N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
www.irf.com
7
IRLL014N
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
E X A M P L E : T H IS IS A N IR FL 0 14
P A R T NU M B E R
IN TE RN A TIO NA L
RE CT IF IE R
LO G O
F L0 14
31 4
TOP
8
W A FER
LO T CO D E
XXXXXX
D A TE CO D E (Y W W )
Y = LA S T D IG IT O F TH E Y E A R
W W = W E EK
B O TT O M
www.irf.com
IRLL014N
Tape & Reel Information
SOT-223 Outline
2 .0 5 (.0 8 0 )
1 .9 5 (.0 7 7 )
TR
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 4 )
0 .3 5 (.0 1 3 )
0 .2 5 (.0 1 0 )
1 .8 5 (.0 7 2 )
1 .6 5 (.0 6 5 )
7 .5 5 (.2 9 7)
7 .4 5 (.2 9 4)
1 6 .3 0 (.6 4 1 )
1 5 .7 0 (.6 1 9 )
7 .6 0 (.2 9 9 )
7 .4 0 (.2 9 2 )
1 .6 0 (.0 6 2 )
1 .5 0 (.0 5 9 )
TYP .
F E E D D IR E C T IO N
1 2 .1 0 (.4 7 5 )
1 1 .9 0 (.4 6 9 )
2 .3 0 (.0 9 0 )
2 .1 0 (.0 8 3 )
7 .1 0 (.2 7 9 )
6 .9 0 (.2 7 2 )
NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S .
1 3 .2 0 (.5 1 9 )
1 2 .8 0 (.5 0 4 )
1 5 .40 (.6 0 7)
1 1 .90 (.4 6 9)
4
330.00
(13.000)
M AX.
N O TE S :
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R ..
3 . D IM E N S IO N M E A S U R E D @ H U B .
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
5 0.00 (1 .9 6 9 )
M IN .
1 4 .4 0 (.5 6 6 )
1 2 .4 0 (.4 8 8 )
3
1 8 .4 0 (.72 4 )
M AX .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 1/99
www.irf.com
9