IRF IRF5852

PD - 93999A
IRF5852
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
VDSS
RDS(on) max (W)
ID
20 V
0.090@VGS = 4.5V
0.120@VGS = 2.5V
2.7A
2.2A
Description
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
TSOP-6
Top View
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
2.7
2.2
11
0.96
0.62
7.7
± 12
-55 to + 150
V
mW/°C
V
°C
Max.
Units
130
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
1/13/03
IRF5852
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
20
–––
–––
–––
0.60
5.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.016
–––
–––
–––
–––
–––
–––
–––
–––
4.0
0.95
0.88
6.6
1.2
15
2.4
400
48
32
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.090
VGS = 4.5V, ID = 2.7A ‚
Ω
0.120
VGS = 2.5V, ID = 2.2A ‚
1.25
V
VDS = V GS, ID = 250µA
–––
S
VDS = 10V, ID = 2.7A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 70°C
100
VGS = 12V
nA
-100
VGS = -12V
6.0
ID = 2.7A
–––
nC
VDS = 16V
–––
VGS = 4.5V ‚
–––
VDD = 10V ‚
–––
ID = 1.0A
ns
–––
RG = 6.2Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
0.96
–––
–––
11
–––
–––
–––
–––
25
6.5
1.2
38
9.8
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 0.96A, VGS = 0V
TJ = 25°C, I F = 0.96A
di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF5852
100
100
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1
1.50V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
1
V DS = 15V
20µs PULSE WIDTH
3.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
2.0
2.5
1
VDS , Drain-to-Source Voltage (V)
100
2.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
Fig 1. Typical Output Characteristics
0.1
1.5
1.50V
1
VDS , Drain-to-Source Voltage (V)
10
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
TOP
TOP
ID = 2.7A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5852
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
500
Ciss
400
300
200
100
Coss
Crss
0
1
10
VGS , Gate-to-Source Voltage (V)
600
VDS = 16V
VDS = 10V
8
6
4
2
0
10
ID = 2.7A
100
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
6
8
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100us
1ms
1
10ms
V GS = 0 V
0.6
10
1.4
TA = 25 °C
TJ = 150 °C
Single Pulse
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5852
3.0
RD
VDS
I D , Drain Current (A)
2.5
V GS
RG
2.0
D.U.T.
+
- VDD
4.5V
1.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS
0.0
90%
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.14
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
IRF5852
0.12
0.10
ID = 2.7A
0.08
0.06
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.30
0.20
VGS = 2.5V
0.10
VGS = 4.5V
0.00
0
2
VGS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
4
6
8
10
12
ID , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
QG
4.5 V
50KΩ
12V
.2µF
.3µF
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRF5852
24
1.2
1.0
ID = 250µA
16
Power (W)
VGS(th) , Variace ( V )
20
0.8
12
8
0.6
4
0
0.4
-75
-50
-25
0
25
50
75
100 125
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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150
0.001
0.010
0.100
1.000
10.000
Time (sec)
Fig 15. Typical Power Vs. Time
7
IRF5852
TSOP-6 Package Outline
TSOP-6 Tape & Reel Information
8
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IRF5852
TSOP-6 Part Marking Information
Notes : T his part marking information applies to devices produced before 02/26/2001
EXAMPLE: T HIS IS AN S I3443DV
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
PART NUMBER
DATE
CODE
TOP
WAFER LOT
NUMBER CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
BOT TOM
WW = (27-52) IF PRECEDED BY A LETTER
PART NUMBER CODE REFERENCE:
3A = SI3443DV
3B = IRF5800
3C = IRF5850
3D = IRF5851
3E = IRF5852
3I = IRF5805
3J = IRF5806
DATE CODE EXAMPLES:
YWW = 9603 = 6C
YWW = 9632 = FF
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
X
Y
Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
Y = YEAR
W = WEEK
PART NUMBER
TOP
PART NUMB ER CODE REFERENCE:
A = SI3443DV
B = IRF5800
C = IRF5850
D = IRF5851
E = IRF5852
I = IRF5805
J = IRF5806
K = IRF5810
L = IRF5804
M = IRF5803
N = IRF5820
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
X
Y
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 1/03
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9
Mouser Electronics
Authorized Distributor
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International Rectifier:
IRF5852TRPBF