IRF IRLMS2002

PD- 93758D
IRLMS2002
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
2.5V Rated
A
D
D
1
6
D
2
5
D
G
3
4
S
VDSS = 20V
RDS(on) = 0.030Ω
Top View
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Micro6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
6.5
5.2
20
2.0
1.3
0.016
± 12
-55 to + 150
V
W/°C
V
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambientƒ
1
01/13/03
IRLMS2002
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
20
–––
–––
–––
0.60
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.016
–––
–––
–––
–––
–––
–––
–––
–––
15
2.2
3.5
8.5
11
36
16
1310
150
36
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.030
VGS = 4.5V, ID = 6.5A ‚
Ω
0.045
VGS = 2.5V, ID = 5.2A ‚
1.2
V
VDS = V GS, ID = 250µA
–––
S
VDS = 10V, ID = 6.5A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, V GS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
22
ID = 6.5A
3.3
nC
VDS = 10V
5.3
VGS = 5.0V ‚
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
RD = 10Ω ‚
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
2.0
–––
–––
20
–––
–––
–––
–––
19
13
1.2
29
20
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, I F = 1.7A
di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRLMS2002
100
100
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
10
1.50V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
1.50V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 15V
20µs PULSE WIDTH
2.5
3.0
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
100
2.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
1.5
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
3.5
ID = 5.3A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLMS2002
2000
VGS , Gate-to-Source Voltage (V)
1600
C, Capacitance (pF)
10
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1200
800
400
Coss
Crss
0
1
ID = 6.5A
5.3A
VDS = 10V
8
6
4
2
0
10
0
100
4
8
12
16
20
24
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.2
10
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
6.0
0.20
5.0
0.10
VGS(th) , Variace ( V )
ID , Drain Current (A)
IRLMS2002
4.0
3.0
2.0
0.00
Id = 250µA
-0.10
-0.20
-0.30
1.0
-0.40
0.0
25
50
75
100
125
150
-50
-25
0
TC , Case Temperature ( ° C)
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
RDS ( on) , Drain-to-Source On Resistance ( Ω )
IRLMS2002
RDS(on) , Drain-to -Source Voltage ( Ω )
0.040
0.035
0.030
0.025
Id = 5.3A
0.020
2.0
3.0
4.0
5.0
6.0
7.0
VGS, Gate -to -Source Voltage ( V )
Fig 12. Typical On-Resistance Vs.
Gate Voltage
6
8.0
0.10
0.08
0.06
0.04
VGS= 2.5V
VGS = 4.5V
0.02
0
10
20
30
40
ID, - Drain Current (A )
Fig 13. Typical On-Resistance Vs.
Drain Current
www.irf.com
IRLMS2002
Micro6 Package Outline
3.00 (.118 )
2.80 (.111 )
1.75 (.068 )
1.50 (.060 )
-A-
6
5
LEAD ASSIGNMENTS
2
0.95 ( .0375 )
D
D
6
5
4
1
2
3
D
D
G
2X 0.95 (.0375 )
S
4
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
1
RECOMMENDED FOOTPRINT
-B-
3
2.20 (.087 )
0.50 (.019 )
6X
0.35 (.014 )
2X
6X 0.65 (.025 )
0.15 (.006 ) M C A S B S
O
O
0 -10
1.30 (.051 )
0.90 (.036 )
6X
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
6 SURFACES
0.15 (.006 )
MAX.
0.20 (.007 )
0.09 (.004 )
0.60 (.023 )
0.10 (.004 )
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 P
Micro6 Tape & Reel Information
8mm
4mm
FEED DIRECTION
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
www.irf.com
7
IRLMS2002
Micro6 Part Marking Information
Notes: This part marking information applies to devices produced before 02/26/2001
EXAMPLE: THIS IS AN IRLMS6702
WW = (1-26) IF PRECEDED BY L AST DIGIT OF CALENDAR YEAR
PART NUMBER
DATE
CODE
TOP
WAFER LOT
NUMBER CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
BOT TOM
WW = (27-52) IF PRECEDED BY A LETT ER
PART NUMBER CODE REFERENCE:
2A =
2B =
2C =
2D =
2E =
2F =
2G =
2H =
IRLMS 1902
IRLMS 1503
IRLMS 6702
IRLMS 5703
IRLMS 6802
IRLMS 4502
IRLMS 2002
IRLMS 6803
DAT E CODE EXAMPLES:
YWW = 9603 = 6C
YWW = 9632 = FF
WORK
WEEK
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
W
27
28
29
30
A
B
C
D
50
51
X
Y
Notes: This part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
Y = YEAR
W = WEEK
PART NUMBER
TOP
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
PART NUMBER CODE REFERENCE:
A=
B=
C=
D=
E=
F=
G=
H=
IRLMS 1902
IRLMS 1503
IRLMS 6702
IRLMS 5703
IRLMS 6802
IRLMS 4502
IRLMS 2002
IRLMS 6803
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LET TER
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/03
8
www.irf.com