TOSHIBA 2SC5064

2SC5064
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5064
VHF~UHF Band Low Noise Amplifier Applications
•
Low noise figure, high gain.
•
NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Base current
IB
15
mA
Collector current
IC
30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
Min
Typ.
Max
Unit
GHz
VCE = 5 V, IC = 10 mA
5
7
⎯
2
VCE = 5 V, IC = 10 mA, f = 500 MHz
⎯
17
⎯
2
VCE = 5 V, IC = 10 mA, f = 1 GHz
8.5
12
⎯
NF (1)
VCE = 5 V, IC = 3 mA, f = 500 MHz
⎯
1
⎯
NF (2)
VCE = 5 V, IC = 3 mA, f = 1 GHz
⎯
1.1
2.0
Min
Typ.
Max
Unit
fT
⎪S21e⎪ (1)
⎪S21e⎪ (2)
dB
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
⎯
⎯
1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
⎯
⎯
1
μA
VCE = 5 V, IC = 10 mA
80
⎯
240
⎯
0.7
⎯
pF
⎯
0.45
0.9
pF
DC current gain
hFE
(Note 1)
Output capacitance
Cob
Reverse transfer capacitance
Cre
VCB = 5 V, IE = 0, f = 1 MHz
(Note 2)
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
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Marking
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S-Parameter
ZO = 50 Ω, Ta = 25°C
VCE = 5 V, IC = 5 mA
Frequency
(MHz)
S11
Mag.
S21
S12
S22
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.753
−43.7
10.247
140.6
0.040
65.6
0.827
−22.6
400
0.531
−75.1
7.684
117.1
0.060
57.1
0.648
−30.3
600
0.384
−96.4
5.815
103.0
0.074
56.1
0.551
−32.0
800
0.305
−112.6
4.523
93.6
0.086
57.0
0.500
−32.3
1000
0.255
−126.5
3.788
86.3
0.099
58.9
0.472
−32.4
1200
0.224
−138.4
3.244
80.7
0.112
60.2
0.455
−32.2
1400
0.203
−150.1
2.833
75.4
0.127
60.3
0.442
−32.6
1600
0.187
−159.4
2.529
70.6
0.139
60.0
0.434
−33.0
1800
0.174
−166.5
2.283
66.7
0.150
60.3
0.429
−32.6
2000
0.176
−171.2
2.107
63.0
0.164
59.2
0.428
−32.2
VCE = 5 V, IC = 10 mA
Frequency
S11
S21
S12
S22
(MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.591
−58.0
14.955
129.6
0.034
64.3
0.714
−27.5
400
0.367
−90.3
9.581
107.5
0.052
61.9
0.534
−30.8
600
0.260
−110.7
6.781
96.1
0.067
63.9
0.462
−30.1
800
0.209
−126.9
5.207
88.6
0.083
65.2
0.428
−29.2
1000
0.178
−141.8
4.269
82.5
0.100
66.4
0.412
−28.6
1200
0.160
−153.7
3.618
77.7
0.117
66.7
0.403
−28.3
1400
0.150
−166.3
3.152
72.7
0.135
65.4
0.398
−28.8
1600
0.141
−175.2
2.801
68.7
0.149
64.0
0.393
−29.4
1800
0.130
178.2
2.521
65.0
0.163
63.4
0.392
−29.0
2000
0.133
174.0
2.314
61.7
0.179
61.3
0.395
−28.6
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RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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