TOSHIBA SSM6N04FU

SSM6N04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU
High Speed Switch Applications
•
•
•
•
Unit: mm
With built-in gate-source resistor: RGS = 1 MΩ (typ.)
2.5 V gate drive
Low gate threshold voltage: Vth = 0.7~1.3 V
Small package
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
10
V
ID
100
mA
200
mW
DC drain current
Drain power dissipation
PD
(Note 1)
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
Pin Assignment (top view)
(Q1, Q2 common)
Equivalent Circuit
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SSM6N04FU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = 10 V, VDS = 0
⎯
⎯
15
μA
V (BR) DSS
ID = 100 μA, VGS = 0
20
⎯
⎯
V
IDSS
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.7
⎯
1.3
V
Forward transfer admittance
⎪Yfs⎪
VDS = 3 V, ID = 10 mA
25
50
⎯
mS
Drain-source ON resistance
RDS (ON)
ID = 10 mA, VGS = 2.5 V
⎯
4
12
Ω
Gate threshold voltage
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
11.0
⎯
pF
Reverse transfer capacitance
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
3.3
⎯
pF
Output capacitance
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
9.3
⎯
pF
Switching time
Turn-on time
ton
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V
⎯
0.16
⎯
Turn-off time
toff
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V
⎯
0.19
⎯
VGS = 0~10 V
0.7
1.0
1.3
Gate-source resistor
RGS
μs
MΩ
Switching Time Test Circuit
(a)
Test circuit
2
(b)
VIN
VGS
(c)
VOUT
VDS
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SSM6N04FU
(Q1, Q2 common)
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SSM6N04FU
(Q1, Q2 common)
*: Total rating
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SSM6N04FU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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