VISHAY TZMC3V9-GS08

TZM-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
•
•
•
•
•
•
•
•
•
Very sharp reverse characteristic
Low reverse current level
e2
Very high stability
Low noise
TZMC - VZ-tolerance ± 5 %
TZMB - VZ-tolerance ± 2 %
Available with tighter tolerances
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
17205
Applications
• Voltage stabilization
Mechanical Data
Case: MiniMELF Glass case (SOD-80)
Weight: approx. 31 mg
Packaging codes/ options:
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
Symbol
Value
Unit
Ptot
500
mW
IZ
Ptot/VZ
mA
RthJA ≤ 300 K/W
Z-current
Junction temperature
Tj
175
°C
Tstg
- 65 to + 175
°C
Symbol
Value
Unit
RthJA
500
K/W
Storage temperature range
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 84122
Rev. 1.4, 28-Feb-06
Test condition
IF = 200 mA
Symbol
VF
Min
Typ.
Max
Unit
1.5
V
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TZM-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Zener Voltage
Range
VZ at IZT
1)
rzjT at
IZT
Test Current
Reverse Leakage Current
rzjK at
IZK
IZT
IZK
IR
IR1)
at VR
mA
mA
µA
µA
V
V
V
Ω
Ω
min
max
typ
typ
TZMC2V4
2.28
2.56
< 85
< 600
5
1
< 50
< 100
TZMC2V7
2.5
2.9
< 85
< 600
5
1
< 10
< 50
TZMC3V0
2.8
3.2
< 90
< 600
5
1
<4
TZMC3V3
3.1
3.5
< 90
< 600
5
1
TZMC3V6
3.4
3.8
< 90
< 600
5
1
TZMC3V9
3.7
4.1
< 90
< 600
5
TZMC4V3
4
4.6
< 90
< 600
5
Temperature
Coefficient of
Zener Voltage
TKVZ
%/K
%/K
min
max
1
- 0.09
- 0.06
1
- 0.09
- 0.06
< 40
1
- 0.08
- 0.05
<2
< 40
1
- 0.08
- 0.05
<2
< 40
1
- 0.08
- 0.05
1
<2
< 40
1
- 0.08
- 0.05
1
<1
< 20
1
- 0.06
- 0.03
TZMC4V7
4.4
5
< 80
< 600
5
1
< 0.5
< 10
1
- 0.05
0.02
TZMC5V1
4.8
5.4
< 60
< 550
5
1
< 0.1
<2
1
- 0.02
0.02
TZMC5V6
5.2
6
< 40
< 450
5
1
< 0.1
<2
1
- 0.05
0.05
TZMC6V2
5.8
6.6
< 10
< 200
5
1
< 0.1
<2
2
0.03
0.06
TZMC6V8
6.4
7.2
<8
< 150
5
1
< 0.1
<2
3
0.03
0.07
TZMC7V5
7
7.9
<7
< 50
5
1
< 0.1
<2
5
0.03
0.07
TZMC8V2
7.7
8.7
<7
< 50
5
1
< 0.1
<2
6.2
0.03
0.08
TZMC9V1
8.5
9.6
< 10
< 50
5
1
< 0.1
<2
6.8
0.03
0.09
TZMC10
9.4
10.6
< 15
< 70
5
1
< 0.1
<2
7.5
0.03
0.1
TZMC11
10.4
11.6
< 20
< 70
5
1
< 0.1
<2
8.2
0.03
0.11
TZMC12
11.4
12.7
< 20
< 90
5
1
< 0.1
<2
9.1
0.03
0.11
TZMC13
12.4
14.1
< 26
< 110
5
1
< 0.1
<2
10
0.03
0.11
TZMC15
13.8
15.6
< 30
< 110
5
1
< 0.1
<2
11
0.03
0.11
TZMC16
15.3
17.1
< 40
< 170
5
1
< 0.1
<2
12
0.03
0.11
TZMC18
16.8
19.1
< 50
< 170
5
1
< 0.1
<2
13
0.03
0.11
TZMC20
18.8
21.2
< 55
< 220
5
1
< 0.1
<2
15
0.03
0.11
TZMC22
20.8
23.3
< 55
< 220
5
1
< 0.1
<2
16
0.04
0.12
TZMC24
22.8
25.6
< 80
< 220
5
1
< 0.1
<2
18
0.04
0,12
TZMC27
25.1
28.9
< 80
< 220
5
1
< 0.1
<2
20
0.04
0.12
TZMC30
28
32
< 80
< 220
5
1
< 0.1
<2
22
0.04
0.12
TZMC33
31
35
< 80
< 220
5
1
< 0.1
<2
24
0.04
0.12
TZMC36
34
38
< 80
< 220
5
1
< 0.1
<2
27
0.04
0.12
TZMC39
37
41
< 90
< 500
2.5
0.5
< 0.1
<5
30
0.04
0.12
TZMC43
40
46
< 90
< 600
2.5
0.5
< 0.1
<5
33
0.04
0.12
TZMC47
44
50
< 110
< 700
2.5
0.5
< 0.1
<5
36
0.04
0.12
TZMC51
48
54
< 125
< 700
2.5
0.5
< 0.1
< 10
39
0.04
0.12
TZMC56
52
60
< 135
< 1000
2.5
0.5
< 0.1
< 10
43
0.04
0.12
TZMC62
58
66
< 150
< 1000
2.5
0.5
< 0.1
< 10
47
0.04
0.12
TZMC68
64
72
< 200
< 1000
2.5
0.5
< 0.1
< 10
51
0.04
0.12
TZMC75
70
79
< 250
< 1500
2.5
0.5
< 0.1
< 10
56
0.04
0.12
at Tj = 150 °C
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Dynamic
Resistance
Document Number 84122
Rev. 1.4, 28-Feb-06
TZM-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Zener Voltage
Range
VZ at IZT
1)
Dynamic
Resistance
rzjT at
IZT
Test Current
Reverse Leakage Current
rzjK at
IZK
IZT
IZK
IR
IR1)
at VR
mA
mA
µA
µA
V
Temperature
Coefficient of
Zener Voltage
TKVZ
V
V
Ω
Ω
min
max
typ
typ
TZMB2V4
2.35
2.45
< 85
< 600
5
1
< 50
< 100
1
- 0.09
- 0.06
TZMB2V7
2.64
2.76
< 85
< 600
5
1
< 10
< 50
1
- 0.09
- 0.06
TZMB3V0
2.94
3.06
< 90
< 600
5
1
<4
< 40
1
- 0.08
- 0.05
TZMB3V3
3.24
3.36
< 90
< 600
5
1
<2
< 40
1
- 0.08
- 0.05
TZMB3V6
3.52
3.68
< 90
< 600
5
1
<2
< 40
1
- 0.08
- 0.05
TZMB3V9
3.82
3.98
< 90
< 600
5
1
<2
< 40
1
- 0.08
- 0.05
TZMB4V3
4.22
4.38
< 90
< 600
5
1
<1
< 20
1
- 0.06
-0.03
TZMB4V7
4.6
4.8
< 80
< 600
5
1
< 0.5
< 10
1
- 0.05
0.02
TZMB5V1
5
5.2
< 60
< 550
5
1
< 0.1
<2
1
- 0.02
0.02
%/K
%/K
min
max
TZMB5V6
5.48
5.72
< 40
< 450
5
1
< 0.1
<2
1
- 0.05
0.05
TZMB6V2
6.08
6.32
< 10
< 200
5
1
< 0.1
<2
2
0.03
0.06
TZMB6V8
6.66
6.94
<8
< 150
5
1
< 0.1
<2
3
0.03
0.07
TZMB7V5
7.35
7.65
<7
< 50
5
1
< 0.1
<2
5
0.03
0.07
TZMB8V2
8.04
8.36
<7
< 50
5
1
< 0.1
<2
6.2
0.03
0.08
TZMB9V1
8.92
9.28
< 10
< 50
5
1
< 0.1
<2
6.8
0.03
0.09
TZMB10
9.8
10.2
< 15
< 70
5
1
< 0.1
<2
7.5
0.03
0.1
TZMB11
10.78
11.22
< 20
< 70
5
1
< 0.1
<2
8.2
0.03
0.11
TZMB12
11.76
12.24
< 20
< 90
5
1
< 0.1
<2
9.1
0.03
0.11
TZMB13
12.74
13.26
< 26
< 110
5
1
< 0.1
<2
10
0.03
0.11
TZMB15
14.7
15.3
< 30
< 110
5
1
< 0.1
<2
11
0.03
0.11
TZMB16
15.7
16.3
< 40
< 170
5
1
< 0.1
<2
12
0.03
0.11
TZMB18
17.64
18.36
< 50
< 170
5
1
< 0.1
<2
13
0.03
0.11
TZMB20
19.6
20.4
< 55
< 220
5
1
< 0.1
<2
15
0.03
0.11
TZMB22
21.55
22.45
< 55
< 220
5
1
< 0.1
<2
16
0.04
0.12
TZMB24
23.5
24.5
< 80
< 220
5
1
< 0.1
<2
18
0.04
0,12
TZMB27
26.4
27.6
< 80
< 220
5
1
< 0.1
<2
20
0.04
0.12
TZMB30
29.4
30.6
< 80
< 220
5
1
< 0.1
<2
22
0.04
0.12
TZMB33
32.4
33.6
< 80
< 220
5
1
< 0.1
<2
24
0.04
0.12
TZMB36
35.3
36.7
< 80
< 220
5
1
< 0.1
<2
27
0.04
0.12
TZMB39
38.2
39.8
< 90
< 500
2.5
1
< 0.1
<5
30
0.04
0.12
TZMB43
42.1
43.9
< 90
< 600
2.5
0.5
< 0.1
<5
33
0.04
0.12
TZMB47
46.1
47.9
< 110
< 700
2.5
0.5
< 0.1
<5
36
0.04
0.12
TZMB51
50
52
< 125
< 700
2.5
0.5
< 0.1
< 10
39
0.04
0.12
TZMB56
54.9
57.1
< 135
< 1000
2.5
0.5
< 0.1
< 10
43
0.04
0.12
TZMB62
60.8
63.2
< 150
< 1000
2.5
0.5
< 0.1
< 10
47
0.04
0.12
TZMB68
66.6
69.4
< 200
< 1000
2.5
0.5
< 0.1
< 10
51
0.04
0.12
TZMB75
73.5
76.5
< 250
< 1500
2.5
0.5
< 0.1
< 10
56
0.04
0.12
at Tj = 150 °C
NOTE: Additional measurement of voltage group TZMB9V1 to TZMB75, IR at 95 % VZmin = < 35 nA at Tj = 25 °C
Document Number 84122
Rev. 1.4, 28-Feb-06
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TZM-Series
Vishay Semiconductors
Typical Characteristics
600
500
400
300
200
100
0
0
40
80
120
160
200
TKVZ - Temperature Coefficient of VZ (10-4/K)
Ptot - Total Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
15
10
5
IZ = 5 mA
0
-5
0
Tamb - Ambient Temperature (°C)
95 9602
Figure 1. Total Power Dissipation vs. Ambient Temperature
CD - Diode Capacitance (pF)
IZ = 5 mA
10
150
VR = 2 V
Tj = 25 °C
100
50
0
5
10
15
0
25
20
VZ - Z-Voltage (V)
95 9598
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
20
25
100
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
1.1
4 x 10-4/K
2 x 10-4/K
1.0
0
- 2 x 10-4/K
- 4 x 10-4/K
0.9
95 9599
15
VZ - Z-Voltage (V)
Figure 5. Diode Capacitance vs. Z-Voltage
1.3
0.8
- 60
10
5
95 9601
IF - Forward Current (mA)
VZ - Voltage Change (mV)
Tj = 25 °C
100
0
VZtn - Relative Voltage Change
50
200
1
10
Tj = 25 °C
1
0.1
0.01
0.001
0
60
120
180
0
240
Tj - Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
4
20
40
30
VZ - Z-Voltage (V)
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
1000
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10
95 9600
95 9605
0.2
0.4
0.6
0.8
1.0
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
Document Number 84122
Rev. 1.4, 28-Feb-06
TZM-Series
Vishay Semiconductors
rZ - Differential Z-Resistance (Ω)
100
80
IZ - Z-Current (mA)
Ptot = 500 mW
Tamb = 25 °C
60
40
20
0
0
4
6
12
8
IZ = 1 mA
100
5 mA
10 10 mA
Tj = 25 °C
1
0
20
VZ - Z-Voltage (V)
95 9604
1000
95 9606
5
10
15
20
25
VZ - Z-Voltage (V)
Figure 9. Differential Z-Resistance vs. Z-Voltage
Figure 7. Z-Current vs. Z-Voltage
IZ - Z-Current (mA)
50
Ptot = 500 mW
Tamb = 25 °C
40
30
20
10
0
15
20
95 9607
25
35
30
VZ - Z-Voltage (V)
Zthp - Thermal Resistance for Pulse Cond. (KW)
Figure 8. Z-Current vs. Z-Voltage
1000
tP/T = 0.5
100
tP/T = 0.2
Single Pulse
10
RthJA = 300 K/W
T = Tjmax - Tamb
tP/T = 0.01
tP/T = 0.1
tP/T = 0.02
tP/T = 0.05
1
10-1
95 9603
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
100
101
102
tP - Pulse Length (ms)
Figure 10. Thermal Response
Document Number 84122
Rev. 1.4, 28-Feb-06
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5
TZM-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
1.6 (0.063)
1.4 (0.055)
Cathode indification
0.47 max. (0.019)
3.7 (0.146)
3.3 (0.130)
2.5 (0.098) max
1.25 (0.049) min
2.0 (0.079) min
foot print recommendation:
5.0 (0.197) ref
Document no.: 6.560-5005.01-4
Rev. 7 - Date: 07.February.2005
96 12070
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Document Number 84122
Rev. 1.4, 28-Feb-06
TZM-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84122
Rev. 1.4, 28-Feb-06
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7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1