TOSHIBA SSM3K16CT

SSM3K16CT
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K16CT
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
Suitable for high-density mounting due to compact package
•
Low ON-resistance
0.6±0.05
: Ron = 3.0 Ω (max) (@VGS = 4 V)
0.5±0.03
0.25±0.03
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
0.05±0.03
•
1.0±0.05
0.65±0.02
3
Absolute Maximum Ratings (Ta = 25°C)
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
±10
V
DC
ID
100
Pulse
IDP
200
PD (Note 1)
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~150
°C
Drain current
Drain power dissipation (Ta = 25°C)
2
0.05±0.03
0.35±0.02
0.15±0.03
0.38 +0.02
-0.03
Symbol
0.25±0.03
1
Characteristics
mA
CST3
JEDEC
Using continuously under heavy loads (e.g. the application of
JEITA
high temperature/current/voltage and the significant change in
TOSHIBA
2-1J1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.75 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(10 mm × 10 mm × 1.0 t, Cu Pad: 100 mm )
Note:
Marking (Top View)
Polarity mark
SC
Pin Condition (Top View)
Equivalent Circuit
Polarity mark (on the top)
3
1
3
2
1. Gate
2. Source
3. Drain
1
2
*Electrodes: on the bottom
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected
against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
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SSM3K16CT
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±10 V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = 0.1 mA, VGS = 0
20
⎯
⎯
V
IDSS
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.6
⎯
1.1
V
⏐Yfs⏐
VDS = 3 V, ID = 10 mA
40
⎯
⎯
mS
ID = 10 mA, VGS = 4 V
⎯
1.5
3.0
ID = 10 mA, VGS = 2.5 V
⎯
2.2
4.0
ID = 1 mA, VGS = 1.5 V
⎯
5.2
15
RDS (ON)
Ω
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
9.3
⎯
pF
Reverse transfer capacitance
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
4.5
⎯
pF
Output capacitance
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
9.8
⎯
pF
VDD = 3 V, ID = 10 mA,
VGS = 0~2.5 V
⎯
70
⎯
⎯
125
⎯
Switching time
Turn-on time
ton
Turn-off time
toff
ns
Switching Time Test Circuit
(b) VIN
(a) Test circuit
2.5 V
OUT
2.5 V
90%
50 Ω
IN
0
10 μs
0V
RL
VDD
(c) VOUT
VDD = 3 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
10%
VDD
10%
90%
VDS (ON)
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
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SSM3K16CT
ID – VDS
ID – VGS
250
1000
Common source
2.5
Common source
Ta = 25°C
VDS = 3 V
10
(mA)
2.3
2.1
ID
1.9
150
Drain current
Drain current ID
(mA)
200
4 3
1.7
100
1.5
50
100
Ta = 100°C
10
25°C
−25°C
1
0.1
VGS = 1.3 V
0
0
0.5
1
1.5
Drain-Source voltage
0.01
0
2
1
VDS (V)
Gate-Source voltage
RDS (ON) – ID
12
2
VGS (V)
RDS (ON) – VGS
6
Common source
Common source
Ta = 25°C
ID = 10 mA
5
Drain-Source ON-resistance
RDS (ON) (Ω)
Drain-Source ON-resistance
RDS (ON) (Ω)
10
8
VGS = 1.5 V
6
4
2.5 V
2
4
3
Ta = 100°C
2
25°C
1
−25°C
4V
0
1
10
100
0
0
1000
2
4
RDS (ON) – Ta
2
Vth (V)
VGS = 1.5 V, ID = 1 mA
Gate threshold voltage
Drain-Source ON-resistance
RDS (ON) (Ω)
Common source
4
2.5 V, 10 mA
0
−25
4 V, 10 mA
0
25
50
75
8
10
VGS (V)
Vth – Ta
8
2
6
Gate-Source voltage
Drain current ID (mA)
6
3
100
125
1.6
1.2
0.8
0.4
0
−25
150
Ambient temperature Ta (°C)
Common source
ID = 0.1 mA
VDS = 3 V
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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SSM3K16CT
⎪Yfs⎪ – ID
IDR – VDS
250
300 Common source
VDS = 3 V
Ta = 25°C
100
Drain reverse current IDR (mA)
Forward transfer admittance
⎪Yfs⎪ (mS)
500
50
30
10
5
3
1
1
10
100
Drain current
ID
200
D
150
IDR
G
S
100
50
0
0
1000
Common source
VGS = 0 V
Ta = 25°C
−0.2
(mA)
−0.4
−0.6
Drain-Source voltage
−1
VDS
−1.2
−1.4
(V)
t – ID
C – VDS
100
5000
Common source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
3000
50
30
(pF)
Switching time t (ns)
toff
10
Capacitance C
−0.8
Ciss
Coss
5
3
Crss
Common source
1 VGS = 0 V
f = 1 MHz
0.5 Ta = 25°C
0.3
0.1
1000
500
100
ton
50
30
0.3 0.5
3
1
5
Drain-Source voltage
30 50
10
100
10
0.1
VDS (V)
tf
300
tr
1
10
100
Drain current ID (mA)
PD – Ta
Drain power dissipation PD (mW)
250
Mounted on FR4 board
(10 mm × 10 mm × 1.0 t, Cu
Pad: 100 mm2 )
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
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2007-11-01
SSM3K16CT
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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