TENTATIVE TPCA8006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVII) TPCA8006-H Switching Regulator Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 100 µA (max) (V DS = 100 V) • Enhancement mode: V th = 3.0 to 5.0 V (V DS = 10 V, ID = 1 mA) 0.95±0.05 • • 0.15±0.05 4 1 : R DS (ON) = 41 mO (typ.) (V G =10V, ID=9A) 0.05 M A 5 5.0±0.2 0.05 S S 1 4.25±0.2 Symbol Rating Unit Drain-source voltage V DSS 100 V Drain-gate voltage (RGS = 20 kΩ) V DGR 100 V Gate-source voltage V GSS ±20 V JEDEC ? ID 18 A JEITA ? IDP 36 PD 45 W PD 2.8 W PD 1.6 W EA S 224 mJ IAR 18 A EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current (Note 1) Pulsed (Note 1) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) 8 1,2,3：SOURCE 5,6,7,8：DRAIN TOSHIBA A 3.5±0.2 Characteristics 4 0.6±0.1 Maximum Ratings (Ta = 25°C) 0.595 0.166±0.05 High speed switching Low drain-source ON resistance 0.4±0.1 1.1±0.2 Small footprint due to small and thin package • • 6.0±0.3 • 1.27 8 5.0±0.2 0.5±0.1 Unit: mm 5 0.8±0.1 4：GATE 2-5Q1A Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2004-03-08 TENTATIVE TPCA8006-H Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8006-H Type ※ Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V， Tch = 25°C (initial)， L = 0.8 mH， RG = 25 Ω， IAR = 18 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2004-03-08 TENTATIVE TPCA8006-H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±20 V, V DS = 0 V ±100 nA Drain cut-OFF current IDSS V DS = 100 V, V GS = 0 V 100 µA V (BR) DSS ID = 10 mA, V GS = 0 V 100 V V th V DS = 10 V, ID = 1 mA 3.0 5.0 V Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance RDS (ON) V GS = 10 V , ID = 9 A 41 67 mΩ Forward transfer admittance |Yf s | V DS = 10 V , ID = 9 A 7.5 15 S Input capacitance Ciss 780 17 390 (3) (13) 2 13 12 Reverse transfer capacitance Crss Output capacitance Coss tr Turn-ON time ton Fall time tf Turn-OFF time toff V OUT 4.7 Ω Switching time Total gate charge (gate-source plus gate-drain) ID = 9 A V GS 10 V 0V RL = 5.6Ω Rise time V DS = 10 V , V GS = 0 V , f = 1 MHz V DD ∼ − 50 V Duty < 1%, t = 10 µs = w Qg ns Gate-source charge 1 Qgs1 5.6 Gate-drain (“miller”) charge Qgd 4.0 Gate switch charge QSW 6.9 V DD ∼ − 80 V, V GS = 10 V , ID = 18 A pF nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse Symbol Test Condition Min Typ. Max Unit IDRP 36 A −1.7 V V DSF IDR = 18 A, V GS = 0 V 3 2004-03-08 TENTATIVE TPCA8006-H RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire sys tem , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 4 2004-03-08