2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 150* mW Junction temperature Tj 150 °C Tstg −55~150 °C * : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm) 0.13 ± 0.05 Rating 0.5 ± 0.05 Symbol Storage temperature range 1 1 2 Maximum Ratings (Ta = 25°C) Characteristic 0.32 ± 0.05 High hFE 0.4 • 0.80 ± 0.05 0.4 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 0.8 ± 0.05 : VCEO = 50 V, IC = 150 mA (max) • 1.2 ± 0.05 0.22 ± 0.05 • Unit: mm VESM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-1L1A Weight: 0.0015 g (typ.) Mount Pad Dimensions (Reference) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Unit: mm 1 2005-06-28 2SC6026MFV Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 µA 120 ⎯ 400 ⎯ IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V VCE = 10 V, IC = 1 mA 60 ⎯ ⎯ MHz VCB = 10 V, IE = 0, f = 1 MHz ⎯ 0.95 3 pF DC current gain hFE (Note) Collector-emitter saturation voltage VCE (sat) Transition frequency fT Collector output capacitance Cob VCE = 6 V, IC = 2 mA Note: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol Marking Type Name hFE Classification HY 2 2005-06-28 2SC6026MFV IC - VCE hFE - IC 120 1000 1.5 1.0 COLLECTOR CURRENT IC (mA) Ta = 100°C 0.7 80 0.5 60 0.3 DC CURRENT GAIN hFE 2.0 100 0.2 40 IB = 0.1 mA 20 -25 100 COMMON EMITTER VCE = 6 V VCE = 1 V COMMON EMITTER Ta = 25°C 0 10 0 1 2 3 4 5 6 7 0.1 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 10 1000 VBE(sat) - IC VCE(sat) - IC 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER IC/IB = 10 Ta = 100°C 0.1 25 -25 COMMON EMITTER IC/ IB = 10 25 -25 1 Ta = 100°C 0.1 0.01 0.1 1 10 100 0.1 1000 COLLECTOR CURRENT IC (mA) 1 10 COLLECTOR POWER DISSIPATION PC (mV) Ta = 100°C 10 25 -25 1 COMMON EMITTER VCE = 6V 0.1 0 0.2 0.4 0.6 1000 PC - Ta IB - VBE 100 100 COLLECTOR CURRENT IC (mA) 1000 BASE CURRENT IB (µA) 100 COLLECTOR CURRENT IC (mA) 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 25 0.8 1 1.2 1.4 BASE-EMITTER VOLTAGE VBE (V) 250 Mounted on FR4 board (24.5 mm × 24.5 mm × 1.6 mmt) 200 150 100 50 0 0 50 100 150 200 AMBIENT TEMPERATURE Ta (°C) 3 2005-06-28 2SC6026MFV 4 2005-06-28