TPD1036F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1036F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drivers The TPD1036F is a 2-IN-1 low-side switch. The output has a vertical MOSFET, and the input can be directly driven from CMOS or TTL logic (e.g., an MPU). The IC provides intelligent protection functions. Features • Two built-in power IC chips with a structure that incorporates a control block and a vertical power MOSFET on each chip. • Can be directly driven from a microprocessor, a CMOS logic IC, etc. • Overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter) protections are built in. Weight: 0.08 g (typ.) • Low ON-resistance: RDS (ON) = 0.5 Ω (max) (@VIN = 5 V, ID = 0.7 A, Tch = 25°C) • Low drain cut-off current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C) • Low input current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40 to 110°C) • Housed in the 8-pin SOP package and supplied in embossed carrier tape. Pin Assignment (top view) Marking SOURCE1 1 8 DRAIN1 IN1 2 7 DRAIN1 SOURCE2 3 6 DRAIN2 IN2 4 5 DRAIN2 TPD1036 F Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb) -Free Finish Note: This product has a MOS structure and is sensitive to electrostatic discharge. 1 2008-09-12 TPD1036F Block Diagram SOURCE1 1 8 DRAIN1 Overtemperature Detection /Protection Overcurrent Detection /Protection IN1 2 7 DRAIN1 SOURCE2 3 6 DRAIN2 Overtemperature Detection /Protection Overcurrent Detection /Protection IN2 4 5 DRAIN2 Pin Description Pin No. Symbol 1 SOURCE1 2 IN1 3 SOURCE2 4 IN2 5, 6 DRAIN2 7, 8 DRAIN1 Pin Description Source pin 1. Input pin 1. This pin is connected to a pull-down resistor internally, so that even if the input is open-circuited, output never turns on inadvertently. Source pin 2. Input pin 2. This pin is connected to a pull-down resistor internally, so that even if the input is open-circuited, output never turns on inadvertently. Drain pin 2. Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC. Drain pin 1. Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC. 2 2008-09-12 TPD1036F Timing Chart 5°C hysteresis (typ.) Input signal Overcurrent detection Channel temperature Overtemperature detection 150°C (min) V(CL)DSS VDD Drain-source voltage Inductive load drive Drain current Normal Current limiting (limiter) Active clamp Thermal shutdown Truth Table VIN VDS Output State L H Off H L On L H Off H H Current limiting (limiter) L H Off H H Off Operating State Normal Load short-circuited Overtemperature 3 2008-09-12 TPD1036F Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VDS 30 V Drain current ID Internally limited A Input voltage VIN −0.3 to 6 V PD 2.0 W Single pulse active clamp capability (Note 3) EAS 23 mJ Active clamp current IAR 1.5 A Repetitive active clamp capability (Note 4) EAR 0.2 mJ Operating temperature Topr −40 to 110 °C Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Drain-source voltage Power dissipation DC (t = 10 s) (Note 2) Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient (Note 2) Symbol Max Unit Rth (ch-a) 62.5 °C/W Note 2: Mount on glass epoxy boad [25.4 × 25.4 × 0.8mm] (with the two devices driving)(t =10 s) Note 3: Single pulse active clamp capability test condition VDD = 25 V, Tch = 25°C (initial), L = 10 mH, IAR = 1.5 A, RG = 25Ω Note 4: Repetitive rating: Pulse width limited by maximum channel temperature 4 2008-09-12 TPD1036F Electrical Characteristics Symbol Test Circuit V (CL) DSS ⎯ Vth ⎯ VIN (opr) ⎯ IDSS ⎯ IIN (1) ⎯ Tch = -40 to 110℃ IIN (2) ⎯ Tch = -40 to 110℃ Drain-source ON-resistance RDS (ON) ⎯ Overtemperature detection TS ⎯ Overcurrent detection IS 2 Characteristics Drain-source clamp voltage Input threshold voltage Protective circuit operation input voltage range Drain cut-off current Test Condition Typ. Max Unit 40 ⎯ 60 V 1.0 ⎯ 2.8 0.9 ⎯ 3.0 VIN = 0 V, ID=1mA Tch = -40 to 110℃ Tch = 25℃ VDS = 13 V, ID = 10mA Tch = -40 to 110℃ ⎯ 3 ⎯ 6 ⎯ 3.5 ⎯ 6 ⎯ ⎯ 10 ⎯ ⎯ 100 VIN = 5 V, at normal operation ⎯ ⎯ 300 VIN = 5 V, when overcurrent protective circuit is actuated ⎯ ⎯ 350 ⎯ 0.3 0.5 ⎯ ⎯ 0.75 150 160 ⎯ 1.5 2.5 ⎯ 1 ⎯ ⎯ ⎯ ⎯ 30 ⎯ ⎯ 60 ⎯ ⎯ 60 ⎯ ⎯ 90 ⎯ ⎯ 1.7 Tch = 25℃ Tch = -40 to 110℃ Tch = 25℃ VIN = 0 V, VDS = 30V Tch = -40 to 110℃ Input current Tch = 25℃ VIN = 5 V, ID = 0.7 A Tch = -40 to 110℃ ⎯ VIN = 5 V Tch = 25℃ VIN = 5 V Tch = -40 to 110℃ Switching times 1 tOFF VDSF VDD = 13 V, VIN = 0 V/5 V, ID = 0.7 A Tch = -40 to 110℃ Tch = 25℃ Tch = -40 to 110℃ ⎯ VIN = 0 V, Tch = 25℃ V V μA μA Tch = 25℃ tON Drain-source diode forward voltage Min IF = 1.5 A Ω °C A μs V Test Circuit 1 Switching times measuring circuit Test Circuit Measured Waveforms TPD1036F IN DRAIN SOURCE P.G. V 0V 10% ID = 0.7 A VDD = 13 V 5V 90% VIN Waveform 90% VDS Waveform 13 V 10% tON tOFF Test Circuit 2 Overcurrent detection measuring circuit Test Circuit TPD1036F IN RL decrease RL DRAIN SOURCE IS ID VIN = 5 V V ID RL 0A VDD 5 2008-09-12 TPD1036F V(CL) DSS – Tch Vth – Tch 5 VIN = 0 V ID = 1 mA VDS = 13 V Input threshold voltage Vth (V) Drain-source clamp voltage V(CL) DSS (V) 60 50 40 30 20 10 0 −80 −40 0 40 80 Channel temperature 120 ID = 10 mA 4 3 2 1 0 −80 160 −40 Tch (°C) 0 40 IIN (1) – Tch 400 VIN = 5 V overcurrent protective (μA) operation circuit is actuated 300 IIN(2) 300 IIN(1) (μA) 160 VIN = 5 V normal 200 Input current 200 Input current 120 Tch (°C) IIN (2) – Tch 400 100 0 −80 −40 0 40 80 Channel temperature 120 100 0 −80 160 Tch (°C) −40 0 RDS (ON) – Tch 80 120 160 Tch (°C) RDS (ON) – VIN 0.8 ID = 0.7 A ID = 0.7 A Tch = 25°C Drain-source ON-resistance RDS(ON) (Ω) VIN = 5 V 0.6 0.4 0.2 0.0 −80 40 Channel temperature 0.8 Drain-source ON-resistance RDS(ON) (Ω) 80 Channel temperature −40 0 40 80 Channel temperature 120 0.6 0.4 0.2 0.0 0 160 Tch (°C) 2 4 Input voltage 6 6 8 VIN (V) 2008-09-12 TPD1036F IS – Tch IS – VIN 5 IS (A) VIN = 5 V 4 Overcurrent detection Overcurrent detection IS (A) 5 3 2 1 0 −80 −40 0 40 80 Channel temperature 120 Tch = 25°C 4 3 2 1 0 0 160 2 Tch (°C) 4 tON, tOFF – Tch 2.5 Mount on glass epoxy boad [25.4 × 25.4 × 0.8mm] (with the two devices driving) VIN = 5 V (W) ID = 0.7 A PD 40 Power dissipation Switching times tON, tOFF (μs) VDD = 13 V tOFF 20 tON −40 0 40 80 Channel temperature 8 PD – Ta 60 0 −80 6 VIN (V) Input voltage 120 2.0 1.5 DC 1.0 0.5 0 0 160 t = 10 s 40 80 120 Ambient temperature Tch (°C) 7 160 200 Ta (°C) 2008-09-12 TPD1036F Package Dimensions Weight: 0.08 g (typ.) 8 2008-09-12 TPD1036F RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2008-09-12