TOSHIBA TPCS8214_09

TPCS8214
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCS8214
Lithium Ion Battery Applications
Unit: mm
•
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 10S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
•
Enhancement mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200μA)
•
Common drain
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
V
Drain current
VGSS
±12
DC
(Note 1)
ID
6
Pulse
(Note 1)
IDP
24
PD (1)
1.1
Single-device
Drain power
operation (Note 3a)
dissipation
Single-device value
(t = 10 s)
(Note 2a) at dual operation
(Note 3b)
Single-device
operation (Note 3a)
Drain power
dissipation
Single-device value
(t = 10 s)
(Note 2b) at dual operation
(Note 3b)
A
W
PD (2)
0.75
PD (1)
0.6
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
W
PD (2)
0.35
Single pulse avalanche energy
(Note 4)
EAS
9.4
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.075
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Circuit Configuration
8
7
6
5
1
2
3
4
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
WARNING
【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack】
Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not
noncombustible.Use a unit example PTC Thermistor, which can shut off the power supply if a short-circuit
occurs. If the power supply is not shut off on the occurring short-circuit, a large short-circuit current will flow
continuously, which may cause the device to catch fire or smoke.
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TPCS8214
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(Note 2a) Single-device value at
(t = 10 s)
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(Note 2b) Single-device value at
(t = 10 s)
dual operation
(Note 3b)
Symbol
Max
Rth (ch-a) (1)
114
Rth (ch-a) (2)
167
Rth (ch-a) (1)
208
Rth (ch-a) (2)
357
Unit
°C/W
°C/W
Marking (Note 6)
Part No. (or abbreviation code)
S8214
Lot No.
Note 7
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 6 A
Note 5: Repetitive rating: pulse width limited by max channel temperature
Note 6: ○ on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Note 7: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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TPCS8214
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −12 V
15
⎯
⎯
Vth
VDS = 10 V, ID = 200 μA
0.5
⎯
1.4
VGS = 2.5 V, ID = 4.2 A
⎯
12.5
18.5
VGS = 4.0 V, ID = 4.8 A
⎯
11
13.5
VGS = 4.5 V, ID = 4.8 A
⎯
10.5
13
VDS = 10 V, ID = 3.0 A
5
10
⎯
⎯
3240
⎯
⎯
285
⎯
⎯
315
⎯
⎯
21
⎯
⎯
33
⎯
⎯
15
⎯
⎯
66
⎯
⎯
42
⎯
⎯
7
⎯
⎯
14
⎯
Gate threshold voltage
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-ON time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ton
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
4.7 Ω
Switching time
Fall time
tf
toff
ID = 3 A
5V
VGS
0V
VDD ∼
− 15 V
VOUT
RL = 4.7Ω
Drain-source breakdown voltage
Duty <
= 1%, tw = 10 μs
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
VDD ∼
− 24 V, VGS = 5 V, ID = 6 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
24
A
⎯
⎯
−1.2
V
VDSF
IDR = 6 A, VGS = 0 V
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TPCS8214
ID – VDS
ID – VDS
10
20
4.5
2
1.9
Common source
1.8
Ta = 25°C, Pulse test
(A)
8 3.1
ID
4
6
1.7
Drain current
Drain current
ID
(A)
2.5
4
1.6
2
16
2.5
Common source
2
Ta = 25°C
3.1
4
4.5
Pulse test
1.9
12
1.8
8
1.7
4
VGS = 1.5 V
1.6
VGS = 1.5 V
0
0
0.2
0.4
0.6
0.8
Drain-source voltage VDS
0
0
1.0
(V)
1
2
ID – VGS
(V)
VDS – VGS
Common source
VDS (V)
VDS = 10 V
Pulse test
(A)
8
Drain−source voltage
ID
Drain current
5
0.5
Common source
6
25
4
2
100
0
0
1
Ta = −55°C
Ta = 25°C
Pulse test
0.4
0.3
0.2
ID = 1.5 A
3
12
0.1
6
0
0
3
2
Gate-source voltage VGS
(V)
2
4
8
6
Gate-source voltage VGS
|Yfs| – ID
10
12
(V)
RDS (ON) – ID
100
100
Common source
Ta = −55°C
25
100
Ta = 25°C
50
Drain-source ON resistance
RDS (ON) (mΩ)
50
Forward transfer admittance
|Yfs| (S)
4
Drain-source voltage VDS
12
10
3
30
10
5
3
Common source
Pulse test
30
3.1
VGS = 2.5 V
10
4
4.5
5
3
VDS = 10 V
Pulse test
1
0.1
0.3 0.5
1
3
5
10
30 50
1
0.1
100
Drain current ID (A)
0.3 0.5
1
3
5
10
30 50
100
Drain current ID (A)
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TPCS8214
RDS (ON) – Ta
IDR – VDS
30
100
(A)
Pulse test
20
IDR
ID = 6 A
3
Drain reverse current
1.5
VGS = 2.5 V
10
0
−80
4.5
30
10
3
10
5
5
3
1
0.5
Common source
0.3
Ta = 25°C
Pulse test
−40
0
40
80
120
0.1
0
160
−0.2
−0.4
C – VDS
2.0
Vth (V)
Coss
Crss
100
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
1
0.1
10
ID = 200 μA
Pulse test
1.2
0.8
0.4
−40
0.4
(3)
VDS (V)
(4)
50
100
120
160
30
0.2
0
0
80
Dynamic input/output
characteristics
Drain−source voltage
Drain power dissipation PD (W)
0.6
40
(V)
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 10 s
(2)
0
Ambient temperature Ta (°C)
PD – Ta
1
(V)
VDS = 10 V
1.6
100
Drain−source voltage VDS
(1)
−1.2
Common source
0
−80
1
−1.0
150
VDD = 24 V
20
6
10
2
VDD = 12, 24 V
6
Common source
ID = 6 A
Ta = 25°C, Pulse test
10
20
30
40
Total gate charge
Ambient temperature Ta (°C)
5
4
VGS
VDS
12
0
0
200
6
(V)
Capacitance
Gate threshold voltage
1000
C
(pF)
Ciss
0.8
−0.8
Vth – Ta
10000
1.2
−0.6
Drain-source voltage VDS
Ambient temperature Ta (°C)
10
VGS = −1 V
0
1
50
Qg
60
VGS
3.1
4
50
Gate-source voltage
Drain-source ON resistance
RDS (ON) (mΩ)
Common source
0
70
(nC)
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TPCS8214
rth − tw
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
500 (1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
300
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
(3)
(2)
(1)
100
50
Transient thermal impedance
rth (°C/W)
1000
30
10
5
3
1
0.5
0.3
Single pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (s)
Safe operating area
100
Single-device value at dual
operation
(Note 3b)
1 ms *
10
Drain current
ID
(A)
ID max (Pulse) *
10 ms *
1
* Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.1
1
VDSS max
10
Drain−source voltage VDS
100
(V)
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TPCS8214
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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