MP4513 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4513 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. · Package with heat sink isolated to lead (SIP 12 pin) · High collector power dissipation (4 devices operation) · High collector current: IC (DC) = 5 A (max) Unit: mm : PT = 5 W (Ta = 25°C) · High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A) · Diode included for absorbing fly-back voltage. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V DC IC 5 Pulse ICP 8 IB 0.1 A PC 3.0 W Collector current Continuous base current A JEDEC ― JEITA ― TOSHIBA 2-32B1A Weight: 6.0 g (typ.) Collector power dissipation (1 device operation, Ta = 25°C) Collector power dissipation Ta = 25°C (4 devices operation) Tc = 25°C 5.0 PT Isolation voltage Junction temperature Storage temperature range W 25 VIsol 1000 V Tj 150 °C Tstg −55 to 150 °C Array Configuration 2 3 4 5 1 9 8 10 11 12 6 7 R1 R2 R1 ≈ 5 kΩ R2 ≈ 150 Ω 1 2002-11-20 MP4513 Thermal Characteristics Characteristics Thermal resistance of junction to ambient Symbol Max Unit ΣRth (j-a) 25 °C/W ΣRth (j-c) 5.0 °C/W TL 260 °C (4 devices operation, Ta = 25°C) Thermal resistance of junction to case (4 devices operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 A ― ― 10 µA Collector cut-off current ICEO VCE = 100 V, IB = 0 A ― ― 10 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 A 0.3 ― 2.0 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 30 mA, IB = 0 A 100 ― ― V hFE (1) VCE = 3 V, IC = 0.5 A 1000 ― ― hFE (2) VCE = 3 V, IC = 3 A 1000 ― ― Collector-emitter VCE (sat) IC = 3 A, IB = 12 mA ― ― 2.0 Base-emitter VBE (sat) IC = 3 A, IB = 12 mA ― ― 2.5 fT VCE = 3 V, IC = 0.5 A ― 10 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 40 ― pF ― 0.5 ― ― 4.0 ― ― 2.5 ― Saturation voltage Transition frequency Collector output capacitance Turn-on time Cob ton Input Storage time 20 µs tstg IB2 IB1 Switching time ― V µs VCC = 30 V IB2 Fall time Output IB1 10 Ω DC current gain tf IB1 = −IB2 = 12 mA, duty cycle ≤ 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 5 A Surge current IFSM Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr t = 1 s, 1 shot ― ― 8 A IF = 1 A, IB = 0 A ― 1.1 1.8 V ― 3.0 ― µs ― 40 ― µC IF = 5 A, VBE = −3 V, dIF/dt = −50 A/µs 2 2002-11-20 MP4513 Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 3 A Reverse current IR VR = 100 V ― ― 0.4 µA Reverse voltage VR IR = 100 µA 100 ― ― V Forward voltage VF IF = 1 A ― ― 1.8 V 3 2002-11-20 MP4513 IC – VCE IC – VBE 10 8 8 Common emitter Tc = 25°C VCE = 3 V (A) 5 6 2 1 4 0.5 0.3 2 6 IC 3 Collector current Collector current IC (A) Common emitter 8 4 Tc = 100°C 25 −55 2 0.2 IB = 0.1 mA 0 0 0 2 4 6 8 Collector-emitter voltage 10 VCE 0 0 12 0.8 (V) 1.6 2.4 3.2 Base-emitter voltage VBE hFE – IC 4.0 (V) VCE – IB 30000 2.4 VCE = 3 V VCE 25 5000 3000 Collector-emitter voltage hFE 10000 DC current gain (V) Common emitter Tc = 100°C −55 1000 500 300 100 0.03 0.1 0.3 1 Collector current 3 IC 10 30 2.0 IC = 5 A 1.6 3 2 1.2 1 0.1 0.8 0.4 Common emitter Tc = 25°C 0 0.03 (A) 0.1 0.3 1 3 Base current VCE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) IC/IB = 250 3 Tc = −55°C 1 25 0.3 0.1 30 100 10 Common emitter 0.5 10 (mA) VBE (sat) – IC 10 5 IB 100 0.3 1 Collector current 3 IC Common emitter 5 3 Tc = −55°C 1 (A) 25 100 0.5 0.3 0.1 10 IC/IB = 250 0.3 1 Collector current 4 3 IC 10 (A) 2002-11-20 MP4513 rth – tw 300 Curves should be applied in thermal Transient thermal resistance rth (°C/W) 100 50 30 (4) limited area. (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. 10 5 3 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation 1 0.3 0.001 0.01 0.1 1 10 Pulse width tw 100 PT – Ta 8 Total power dissipation 1 0.5 0.3 0.1 *: Single nonrepetitive pulse Tc = 25°C 0.05 Curves must be derated linearly VCEO max with increase in temperature. 0.03 3 10 30 100 1 (4) (3) 4 (2) Circuit board (1) 2 40 80 120 160 200 Ambient temperature Ta (°C) 300 (V) ∆Tj – PT 160 (°C) Collector-emitter voltage VCE 6 0 0 Junction temperature increase ∆Tj Collector current PT 100 µs* 10 ms* 1 ms* IC (A) 3 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (W) IC max (pulsed)* 5 1000 (s) Safe Operating Area 20 10 (3) (2) (1) (1) (2) (3) (4) 120 Attached on a circuit board 80 Circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 40 0 0 2 4 6 Total power dissipation 5 8 PT 10 (W) 2002-11-20 MP4513 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-11-20