2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 μs (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VCBO 160 V VCEX 160 V VCEO 80 V VEBO 9 V DC IC 3.0 A Pulse ICP 5.0 A Base current IB 1.0 A Collector power dissipation PC 1.8 W JEDEC － Junction temperature Tj 150 °C JEITA － Tstg −55～150 °C TOSHIBA Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Storage temperature range 1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER 2-10T1A Weight:1.5g(typ) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = 160 V, IE = 0 － － 1.0 uA Emitter cut-off current IEBO VEB = 9 V, IC = 0 － － 1.0 uA V (BR) CEO IC = 10 mA, IB = 0 80 － － V hFE (1) VCE = 2 V, IC = 1 mA 150 － － hFE (2) VCE = 2 V, IC = 0.5 A 180 － 450 hFE (3) VCE = 2 V, IC = 1 A 100 － － DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance IC = 0.5 A, IB = 50 mA － － 0.3 V VCE (sat) (2) IC = 1 A, IB = 100 mA － － 0.5 V VBE (sat) IC = 1 A, IB = 100 mA － － 1.5 V fT VCE = 2 V, IC = 0.5 A － 150 － MHZ VCB = 10 V, IE = 0,f = 1MHZ － 14 － pF － 0.05 － － 0.4 － － 0.15 － Cob 20 μs tr Input Switching time Storage time IB2 IB1 Rise time VCE (sat) (1) tstg IB1 IB2 Output 24 Ω Collector-emitter breakdown voltage us VCC = 24 V Fall time tf IB1 = −IB2 = 100 mA Duty cycle ≦1% 1 2006-10-20 2SC6077 Marking C6077 Part No. Lot code A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-10-20 2SC6077 IC – VCE IC – VBE 3 3 100 30 2 IC IC (A) 50 (A) 300 Common emitter VCE = 2 V Single nonrepetitive pulse 2 Collector current Collector current 10 5 1 IB = 2 mA 0 0 Common emitter Ta = 25°C Single nonrepetitive pulse 1 2 3 4 Collector-emitter voltage VCE Ta = 100℃ 25 1 − 55 0 0 5 (V) 0.4 hFE – IC Collector-emitter saturation voltage VCE (sat) (V) hFE −55 25 100 10 Common emitter VCE = 2 V Single nonrepetitive pulse 0.01 0.1 1 Collector current 1.6 VBE 2 (V) VCE (sat) – IC 10 Ta = 100°C DC current gain 1.2 Base-emitter voltage 1000 1 0.001 0.8 IC 10 Common emitter IC/IB = 10 Single nonrepetitive pulse 1 0.1 Ta = 100°C −55 0.01 0.001 25 0.01 0.1 Collector current (A) 1 IC 10 (A) VBE (sat) – IC Base -emitter saturation voltage VBE (sat) (V) 10 Common emitter IC/IB = 10 Single nonrepetitive pulse −55 1 0.1 0.001 25 Ta = 100°C 0.01 0.1 Collector current 1 IC 10 (A) 3 2006-10-20 2SC6077 rth – tw Transient thermal impedance rth (℃/W) 100 10 Single nonrepetitive pulse Ta = 25°C Curves should be applied in thermal limited area. 1 0.001 0.01 1 0.1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 10 IC max. (pulsed)* 1 ms* 100 ms* 1 10 ms* Collector current IC (A) IC max. (continuous) DC operation Ta=25℃ 0.1 0.01 * Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 Collector−emitter voltage VCEO MAX. 10 100 VCE (V) 4 2006-10-20 2SC6077 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-10-20