TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive • 0.33±0.05 0.05 M A 1 4 2.9±0.1 (PNP Transistor) • 0.05 M B A Low collector-emitter saturation: VCE (sat) = −0.19 V (max) 0.8±0.05 (PNP Transistor) • B 0.65 2.8±0.1 2.4±0.1 0.475 High DC current gain: hFE = 200 to 500 (IC = −0.5 A) 5 8 S 0.025 High-speed switching: tf = 40 ns (typ.) (PNP Transistor) S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 Absolute Maximum Ratings (Ta = 25°C) 1.12 +0.13 -0.12 Transistor Characteristics Collector-base voltage Symbol Rating Unit VCBO −30 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V DC IC −3.0 Pulse ICP −5.0 IB −250 mA 1.0 W Tj 150 °C Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V DC ID 100 Pulse IDP 200 Tj 150 Collector current Base current Collector power dissipation PC (Note 1) Junction temperature 1.Source 2.Collector 3.Collector 4.Collector 0.28 +0.1 -0.11 5.Emitter 6.Base 7.Gate 8.Drain JEDEC ― JEITA ― TOSHIBA 2-3V1B Weight : 0.017g (Typ.) A MOS FET Characteristics Drain current Channel temperature mA °C Note 1: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 TPCP8F01 Common Absolute Maximum Rating (Ta = 25°C) Characteristics Symbol Rating Unit Tstg −55 to 150 °C Storage temperature range Figure 2 Marking (Note 3) 8 7 6 5 8F01 Type * 1 2 3 Lot No. (Weekly code) 4 Note 3 : Black round marking "・" located on the left lower side of parts number marking "8F01" indicates terminal No.1 * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2006-11-13 TPCP8F01 Electrical Characteristics (Ta = 25°C) Transistor Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −30 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA V (BR) CEO IC = −10 mA, IB = 0 −20 ⎯ ⎯ V hFE (1) VCE = −2 V, IC = −0.5 A 200 ⎯ 500 hFE (2) VCE = −2 V, IC = −1.6 A 100 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −1.6 A, IB = −53 mA ⎯ ⎯ −0.19 V Base-emitter saturation voltage VBE (sat) IC = −1.6 A, IB = −53 mA ⎯ ⎯ −1.10 V VCB = −10 V, IE = 0, f = 1MHz ⎯ 28 ⎯ pF ⎯ 70 ⎯ ⎯ 150 ⎯ ⎯ 40 ⎯ Min Typ. Max Unit Collector-emitter breakdown voltage DC current gain Collector Output Capacitance Cob Rise time Switching time tr Storage time See Figure 3 circuit diagram VCC ∼ − −12 V, RL = 7.5 Ω −IB1 = IB2 = −53 mA tstg Fall time tf ns Figure 3. Switching Time Test Circuit & Timing Chart 20us Vout IB1 IB2 RL Vin IB1 Duty Cycle<1% IB2 MOS FET VCC Characteristics Symbol Gate leakage current Drain-source breakdown voltage Drain cut-off current Test Condition IGSS VGS = −10 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 0.1 mA, VGS = 0 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate Threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V Forward Transfer Admittance |Yfs| VDS = 3 V, ID = 10 mA 40 ⎯ ⎯ mS ID = 10 mA, VGS = 4.0 V ⎯ 1.5 3 ID = 10 mA, VGS = 2.5 V ⎯ 2.2 4 ID = 1 mA, VGS = 1.5 V ⎯ 5.2 15 ⎯ 9.3 ⎯ ⎯ 4.5 ⎯ ⎯ 9.8 ⎯ Drain-source ON resistance RDS(ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time Turn-on time ton Turn-off time toff VDS = 3 V, VGS = 0, f = 1 MHz VDD ∼ − −3 V, RL = 300 Ω VGS = 0 to 2.5V ⎯ 70 ⎯ ⎯ 125 ⎯ Ω pF ns Figure 4. Switching Time Test Circuit & Timing Chart Vout 2.5V RL Vin 0 Gate Pulse Width 10us, tr,tf<5ns (Zout=50ohm),Common Source,Ta=25°C Duty Cycle<1% Rg 10us VDD Precautions Vth can be expressed as voltage between gate and source when low operating current value is ID = 100μA for this product. For normal switching operation, VGS(ON) requires higher voltage than Vth snd VGS(OFF) requires lower voltage than Vth. (relationship can be established as follows: VGS(OFF) ＜ Vth ＜ VGS(ON)) Please take this into consideration for using the device. VGS recommended voltage of 2.5V or higher to turn on this product. 3 2006-11-13 TPCP8F01 PNP IC – VCE −6 Common emitter VCE = −2 V Single nonrepetitive pulse −60 mA −80 mA −100 mA DC current gain hFE Collector current IC (A) −5 hFE – IC 10000 Common emitter Ta = 25°C Single nonrepetitive pulse −40 mA −4 −3 −20 mA −2 −10 mA −1 1000 Ta = 100°C 100 −55°C 25°C 10 IB = −5 mA 0 0 −0.4 −1.2 −0.8 −2.0 −1.6 Collector-emitter voltage VCE 1 0.001 −2.4 0.01 Collector current −IC (V) VCE (sat) – IC 0.1 Ta = 100°C 25°C 0.01 −55°C 0.001 0.001 0.01 1 10 (A) VBE (sat) – IC 10 Common emitter β = 30 Single nonrepetitive pulse Base-emitter saturation voltage −VBE (sat) (V) Collector emitter saturation voltage −VCE (sat) (V) 1 0.1 0.1 1 Collector current −IC Common emitter β = 30 Single nonrepetitive pulse 1 100°C 25°C 0.1 0.01 0.001 10 Ta = −55°C 0.01 0.1 Collector current −IC (A) 1 10 (A) IC – VBE Collector current IC (A) −5 Common emitter VCE = −2 V Single nonrepetitive pulse −4 Ta = 100°C −3 −55°C −2 25°C −1 0 0 −0.4 −0.8 Base-emitter voltage −1.2 −1.6 VBE (V) 4 2006-11-13 TPCP8F01 Transient thermal resistance (junction- case) rth (j-c) (°C/W) rth (j-c) – tw 1000 100 10 1 0.001 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe Operation Area 10 IC max (pulsed) * 10 ms* 1 ms* 100 μs* 10 μs* (A) 1 DC OPERATION (Ta = 25°C) 10 s* *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be 0.1 different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase 0.01 in temperature. 0.1 1 Collector-emitter voltage VCEO max Collector current 100 ms* −IC IC max (continuous) 10 100 −VCEO (V) 5 2006-11-13 TPCP8F01 Nch-MOS ID – VDS 250 2.3 1.9 150 Drain current 1.7 100 1.5 50 VGS = 1.3 V 0 0 0.5 1.0 1.5 Drain−source voltage VDS RDS (ON) – Ta 1 4 3 2 1 0 25 50 75 100 Ta 125 150 ID 1000 (A) 100 10 1 1 10 100 Drain current ID 1000 (A) C − VDS 100 Common source VDD = 3 V VGS = 0 to 2.5V Ta = 25°C Common source VGS = 0 V f = 1 MHz Ta = 25°C (pF) toff 100 ⎪Yfs⎪ − ID (°C) t − ID 10000 10 Common source VDS = 20 V Ta = 25°C ⎪Yfs⎪ Forward transfer admittance Drain−source ON resistance RDS (ON) (Ω) 4 1000 5 Ambient temperature 1000 t⎪ C tf 10 Capacitance (ns) 2.5 2 Drain current Common source 0 −25 Switching time 4 (V) 6 ton tr 10 0.1 VGS = 1.5 V 6 0 2.0 7 100 8 (S) 8 Common source Ta = 25°C 10 2.1 ID (A) 10 Drain−source ON resistance RDS (ON) (Ω) 4 3 2.5 200 RDS (ON) − ID 12 Common source Ta = 25°C 1 Drain current 10 ID Ciss Coss Crss 1 0.1 100 (mA) 1 Drain−source voltage 6 10 VDS 100 (V) 2006-11-13 TPCP8F01 RDS (ON) − VGS ID − VGS 8 Common source VDS = 3 V Drain−source ON resistance RDS (ON) (Ω) Drain current ID (mA) 1000 100 10 Ta = 100°C 25 1 −25 0.1 Common source ID = 10 mA 6 4 Ta = 100°C 2 −25 25 0.01 0 1 2 Gate−source voltage 0.1 0 3 2 4 VGS (V) Vth − Ta IDR (mA) 1.6 1.2 0.8 0.4 0 25 0 25 50 75 Ambient temperature 8 10 VGS (V) IDR − VDS 250 Common source ID = 0.1 mA VDS = 3 V Drain reverse current Gate threshold voltage Vth (V) 2.0 6 Gate−source voltage 100 Ta 125 200 150 100 50 0 0 150 (°C) Common source VGS = 0 V Ta = 25°C −0.2 −0.4 −0.6 −0.8 Drain−source voltage 7 −1.0 −1.2 −1.4 VDS (V) 2006-11-13 TPCP8F01 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2006-11-13