SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • High drain-source voltage • High speed switching Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-Source voltage Gate-Source voltage Drain current Symbol Rating Unit VDS 50 V V VGSS ±7 DC ID 100 Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD(Note 1) mA 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating,Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) JEDEC JEITA TOSHIBA ― SC-70 (6pin) 2-2J1C Weight: 6.8 mg (typ.) 0.8 mm 0.4 mm Marking 6 Equivalent Circuit 5 4 6 2 4 Q1 DM 1 5 Q2 3 1 2 3 This transistor is a electrostatic sensitive device. Please handle with caution. 1 2007-11-01 SSM6N17FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Min Typ. Max Unit IGSS VGS = ±7 V, VDS = 0 ― ― ±5 μA V (BR) DSS ID = 0.1 mA, VGS = 0 50 ― ― V IDSS VDS = 50 V, VGS = 0 ― ― 1 μA Vth VDS = 3 V, ID = 1 μA 0.9 ― 1.5 V VDS = 3 V, ID = 10 mA 20 40 ― mS ID = 10 mA, VGS = 4 V ― 12 20 ID = 10 mA, VGS = 2.5 V ― 22 40 ― 7 ― pF ― 3 ― pF ― 7 ― pF ― 100 ― ― 40 ― Forward transfer admittance ⏐Yfs⏐ Drain-Source ON resistance RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time Test Condition Turn-on time ton Turn-off time toff VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 20 mA, VGS = 0~3 V, RG = 10 Ω, RL = 150 Ω Ω ns Switching Time Test Circuit (a) Test circuit (b) VIN 3V OUT IN 50 Ω 0 90% 10 Ω 1 μs RL 3V VDD 0V (c) VOUT VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton 2 tf toff 2007-11-01 SSM6N17FU (Q1, Q2 Common) ID – VDS ID – VGS 100 1000 Common source Common source 5 Ta = 25°C 4.5 100 (mA) 4 60 Drain current ID Drain current ID (mA) 80 40 VGS = 2.5 V 20 VDS = 3 V 10 1 Ta = 150°C 0.1 75°C 25°C 0.01 0 0 0.4 0.8 1.2 Drain-Source voltage 1.6 0.001 0 2 VDS (V) −25°C 1 2 RDS (ON) – ID VGS (V) 30 ID = 10 mA Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) 7 Common source VGS = 2.5 V 4V 10 5 3 1 3 5 10 30 50 30 VGS = 2.5 V 20 4V 10 0 −50 100 Drain current ID (mA) 0 50 RDS (ON) – VGS ⎪Yfs⎪ – ID Forward transfer admittance ⎪Yfs⎪ (mS) Ta = 25°C 30 20 100 mA ID = 10 mA 4 Gate-Source voltage 6 150 500 Common source 2 100 Ambient temperature Ta (°C) 40 Drain-Source on resistance RDS (ON) (Ω) 6 RDS (ON) – Ta Common source 0 0 5 40 50 Ta = 25°C 10 4 Gate-Source voltage 100 1 0.5 3 8 Common source 300 VDS = 3 V Ta = 25°C 100 50 30 10 1 10 VGS (V) 3 5 10 30 50 100 Drain current ID (mA) 3 2007-11-01 SSM6N17FU (Q1, Q2 Common) Vth – Ta C – VDS 50 Common source VDS = 3 V ID = 1μA 1.6 Common source 30 VGS = 0 V (pF) f = 1 MHz 1.2 Capacitance C Gate threshold voltage Vth (V) 2 0.8 Ta = 25°C 10 5 Ciss 3 Coss 0.4 Crss 1 1 0 −50 0 50 100 3 150 5 10 30 Drain-Source voltage Ambient temperature Ta (°C) t – ID (V) −250 500 VDD = 3 V 300 VGS = 0~3 V ton 100 Common source Drain reverse current IDR (mA) Common source Switching time t (ns) 100 IDR – VDS 1000 RG = 10 Ω Ta = 25°C tr 50 toff 30 tf 10 5 3 1 VDS 50 3 5 10 30 50 300 500 1000 100 VGS = 0 V −200 D −150 G −100 S −50 0 0 Drain current ID (mA) Ta = 25°C −0.4 −0.8 −1.2 Drain-Source voltage VDS −1.6 −2 (V) PD* – Ta Drain power dissipation PD* (mW) 250 Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N17FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01