TOSHIBA SSM6P09FU

SSM6P09FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P09FU
High Speed Switching Applications
•
Small package
•
Low Drain-Source ON resistance.
Unit: mm
: Ron = 2.7 Ω (max) (@VGS = −10 V)
: Ron = 4.2 Ω (max) (@VGS = −4 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
DC
ID
−200
Pulse
IDP
−800
PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Drain power dissipation (Ta = 25°C)
Note:
mA
JEDEC
―
JEITA
―
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2J1C
high temperature/current/voltage and the significant change in
Weight: 6.8 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Figure 1.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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SSM6P09FU
Marking
Figure 1: 25.4 mm × 25.4 mm × 1.6 t,
Equivalent Circuit
Cu Pad: 0.32 mm2 × 6
(top view)
6
5
4
6
5
4
Q1
DK
1
2
0.8 mm
0.4 mm
Q2
3
1
2
3
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Gate leakage current
IGSS
Drain-Source breakdown voltage
Drain cut-off current
V (BR) DSS
IDSS
Gate threshold voltage
Vth
⎪Yfs⎪
Forward transfer admittance
Drain-Source ON resistance
RDS (ON)
Test Condition
VGS = ±16 V, VDS = 0
ID = −1 mA, VGS = 0
VDS = −30 V, VGS = 0
Min
Typ.
Max
Unit
⎯
⎯
±1
μA
−30
⎯
⎯
V
⎯
⎯
−1
μA
VDS = −5 V, ID = −0.1 mA
−1.1
⎯
−1.8
V
VDS = −5 V, ID = −100 mA (Note2)
115
⎯
⎯
mS
ID = −100 mA, VGS = −10 V (Note2)
⎯
2.1
2.7
ID = −100 mA, VGS = −4 V (Note2)
⎯
3.3
4.2
ID = −100 mA, VGS = −3.3 V(Note2)
⎯
4.0
6.0
Ω
Input capacitance
Ciss
VDS = −5 V, VGS = 0, f = 1 MHz
⎯
22
⎯
pF
Reverse transfer capacitance
Crss
VDS = −5 V, VGS = 0, f = 1 MHz
⎯
5
⎯
pF
Output capacitance
Coss
VDS = −5 V, VGS = 0, f = 1 MHz
⎯
14
⎯
pF
Switching time
Note2:
Turn-on time
ton
VDD = −5 V, ID = −100 mA,
⎯
85
⎯
Turn-off time
toff
VGS = 0~−4 V
⎯
85
⎯
ns
Pulse test
Switching Time Test Circuit (Q1, Q2 Common)
(a) Test circuit
(b) VIN
0V
OUT
0
50 Ω
IN
−4 V
10 μs
90%
−4 V
RL
VDD
10%
(c) VOUT
VDD = −5 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
VDD
90%
10%
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
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SSM6P09FU
(Q1, Q2 common)
ID – VDS
RDS (ON) – ID
−500
8
Common Source
Common Source
−10
−4
Drain current ID
(mA)
−400
7
Drain-Source on resistance
RDS (ON) (Ω)
Ta = 25°C
−3.3
−300
−3.0
−200
−2.8
−2.6
−100
−0.5
−1
−1.5
Drain-Source voltage
6
5
VGS = −3.3 V
4
−4 V
3
−10 V
2
1
VGS = −2.4 V
0
0
Ta = 25°C
0
0
−2
−100
−200
−300
−500
Drain current ID (mA)
VDS (V)
ID – VGS
RDS (ON) – VGS
−1000
8
Common Source
Common Source
7
VDS = −5 V
Drain-Source on resistance
RDS (ON) (Ω)
(mA)
−100
Drain current ID
−400
25°C
−10
Ta = 100°C
−25°C
−1
−0.1
ID = −100 mA
6
5
Ta = 100°C
4
25°C
3
2
−25°C
1
−0.01
0
−1
−2
−3
Gate-Source voltage
0
0
−4
VGS (V)
−2
−4
−6
Gate-Source voltage
−8
−10
VGS (V)
⏐Yfs⏐ – ID
1000
RDS (ON) – Ta
Common Source
8
500
Common Source
Ta = 25°C
ID = −100 mA
Forward transfer admittance
⏐Yfs⏐ (mS)
Drain-Source on resistance
RDS (ON) (Ω)
7
6
5
VDS = −5 V
VGS = −3.3 V
−4 V
4
3
−10 V
2
300
100
50
30
1
0
−25
0
25
50
75
100
125
10
−10
150
Ambient temperature Ta (°C)
−30
−50
−100
−300 −500
−1000
Drain current ID (mA)
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SSM6P09FU
(Q1, Q2 common)
Vth – Ta
IDR – VDS
−500
−2
ID = −0.1 mA
−1.6
Drain Reveres current IDR (mA)
Vth (V)
Gate threshold voltage
Common Source
VGS = 0
Ta = 25°C
Common Source
−1.8
VDS = −5 V
−1.4
−1.2
−1
−0.8
−0.6
−0.4
−0.2
0
−25
0
50
25
75
100
125
−400
D
−300
G
IDR
S
−200
−100
0
0
150
0.4
0.8
1
Drain-Source voltage
VDS
0.2
Ambient temperature Ta (°C)
C – VDS
100
Switching time t (ns)
(pF)
Capacitance C
5000
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
10
Coss
−10
Drain-Source voltage
1.4
(V)
Common Source
VDD = −5 V
VGS = 0~−4 V
Ta = 25°C
1000
toff
tf
100
ton
tr
Crss
−1
1.2
t – ID
500
1
−0.1
0.6
10
−1
−100
VDS (V)
−10
−100
−1000
Drain current ID (mA)
PD* – Ta
400
Power dissipation PD* (mW)
Mounted on FR4 board.
(25.4 mm × 25.4 mm ×1.6 t
2
Cu pad: 0.32 mm × 6) Figure 1
300
200
100
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
*: Total rating
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SSM6P09FU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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