SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR FZT869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 60 Collector-Emitter Breakdown Voltag V(BR)CER Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 120 V IC=100µA 60 120 V IC=1µA, RB ≤1kΩ V(BR)CEO 25 35 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA Collector Cut-Off Current ICBO 50 1 µA nA VCB=50V VCB=50V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ 50 1 nA µA VCB=50V VCB=50V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 50 110 215 350 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=6.5A, IB=150mA* 1.2 V IC=6.5A, IB=300mA PARTMARKING DETAILS - 35 67 168 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT 100 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 70 pF VCB=10V, f=1MHz* Switching Times ton toff 60 680 ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V 1.13 300 300 200 40 V IC=6.5A, VCE=1V* E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 7 A Power Dissipation at Tamb=25°C Ptot 3 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 272 C FZT869 IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* 450 450 300 100 FZT869 ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts 3 - 271 SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR FZT869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 60 Collector-Emitter Breakdown Voltag V(BR)CER Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 120 V IC=100µA 60 120 V IC=1µA, RB ≤1kΩ V(BR)CEO 25 35 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA Collector Cut-Off Current ICBO 50 1 µA nA VCB=50V VCB=50V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ 50 1 nA µA VCB=50V VCB=50V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 50 110 215 350 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=6.5A, IB=150mA* 1.2 V IC=6.5A, IB=300mA PARTMARKING DETAILS - 35 67 168 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT 100 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 70 pF VCB=10V, f=1MHz* Switching Times ton toff 60 680 ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V 1.13 300 300 200 40 V IC=6.5A, VCE=1V* E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 7 A Power Dissipation at Tamb=25°C Ptot 3 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 272 C FZT869 IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* 450 450 300 100 FZT869 ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts 3 - 271