SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE - FZT855 FZT955 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO 250 V V CEO 150 V Emitter-Base Voltage V EBO 6 V Peak Pulse Current I CM 10 A Continuous Collector Current IC 5 A Power Dissipation at T amb=25°C P tot 3 W Operating and Storage Temperature Range T j :T stg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum 78 FZT855 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 250 Collector-Emitter Breakdown Voltage V (BR)CER Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 375 V I C=100 A 250 375 V I C =1 A, RB 1k V (BR)CEO 150 180 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 6 8 V I E=100 A Collector Cut-Off Current I CBO 50 1 nA A V CB=200V V CB=200V, T amb=100°C Collector Cut-Off Current I CER R 1k 50 1 nA A V CB=200V V CB=200V, T amb=100°C Emitter Cut-Off Current I EBO 10 nA V EB=6V 40 65 110 355 mV mV mV mV I C=100mA, I B=5mA* I C=500mA, I B=50mA* I C=1A, I B=100mA* I C=5A, I B=500mA* Collector-Emitter Saturation V CE(sat) Voltage 20 35 60 260 MAX. Base-Emitter Saturation Voltage V BE(sat) 1250 mV I C=5A, I B=500mA* Base-Emitter Turn-On Voltage V BE(on) 1.1 V I C =5A, V CE=5V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 90 MHz I C==100mA, V CE=10V f=50MHz Output Capacitance C obo 22 pF V CB=10V, f=1MHz Switching Times t on t off 66 2130 ns ns I C=1A, I B1=100mA I B2=100mA, V CC=50V 100 100 15 200 200 30 10 I C=10mA, V CE=5V I C=1A, V CE=5V* I C=5A, V CE=5V* I C=10A, V CE=5V* 300 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 78 FZT855 TYPICAL CHARACTERISTICS 1.6 0.4 IC/IB=10 IC/IB=50 0.2 0 0.01 0.1 1 10 1.2 1.0 0.8 0.6 200 VCE=5V VCE=10V 0.2 0 100 0.01 0.1 100 10 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.0 VCE=5V 1.5 VBE - (Volts) 2.0 IC/IB=10 IC/IB=50 1.0 1.5 1.0 0.5 0.5 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 100 Single Pulse Test Tamb=25C 10 IC - Collector Current (A) VBE(sat) - (Volts) 100 0.4 IC - Collector Current (Amps) 0.001 hFE - Typical Gain 0.6 300 1.4 hFE - Normalised Gain VCE(sat) - (Volts) 0.8 1 0.1 0.01 1 DC 1s 100ms 10ms 1ms 100s 10 100 VCE - Collector Voltage (V) Safe Operating Area 78 1000