DIODES ZXMN3A01FTA

ZXMN3A01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 30V; RDS(ON) = 0.12
ID = 2.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A01FTA
7”
8mm
3000 units
ZXMN3A01FTC
13”
8mm
10000 units
PINOUT
DEVICE MARKING
• 7N3
Top View
ISSUE 2 - JULY 2002
1
ZXMN3A01F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
30
V
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
ID
Pulsed Drain Current (c)
I DM
Continuous Source Current (Body Diode) (b)
IS
Pulsed Source Current (Body Diode) (c)
I SM
8
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
20
V
2.0
1.6
1.8
A
8
A
1.3
A
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
200
°C/W
Junction to Ambient (b)
R θJA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 2 - JULY 2002
2
ZXMN3A01F
CHARACTERISTICS
0.7
RDS(on)
Limited
Max Power Dissipation (W)
ID Drain Current (A)
10
1
DC
100m
1s
10m
Single Pulse
Tamb=25°C
100ms
10ms
100m
1ms
100µs
1
10
VDS Drain-Source Voltage (V)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
MaximumPower (W)
Thermal Resistance (°C/W)
Tamb=25°C
D=0.5
100
Single Pulse
D=0.2
D=0.05
D=0.1
0
100µ 1m
10m 100m
1
10
80
100 120 140 160
Derating Curve
150
50
60
Temperature (°C)
Safe Operating Area
200
40
100
1k
Single Pulse
Tamb=25°C
10
1
100µ 1m
Pulse Width (s)
10m 100m
1
10
100
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JULY 2002
3
1k
ZXMN3A01F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
30
I D =250µA, V GS =0V
0.5
µA
V DS =30V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
I =250µA, V DS = V GS
D
Ω
Ω
V GS =10V, I D =2.5A
V GS =4.5V, I D =2.0A
V DS =4.5V,I D =2.5A
1
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
V
0.106
0.12
0.18
g fs
3.5
S
Input Capacitance
C iss
190
pF
Output Capacitance
C oss
38
pF
Reverse Transfer Capacitance
C rss
20
pF
Turn-On Delay Time
t d(on)
1.7
ns
Rise Time
tr
2.3
ns
Turn-Off Delay Time
t d(off)
6.6
ns
Fall Time
tf
2.9
ns
Gate Charge
Qg
2.3
nC
Total Gate Charge
Qg
3.9
nC
Gate-Source Charge
Q gs
0.6
nC
Gate-Drain Charge
Q gd
0.9
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
DYNAMIC (3)
V DS =25 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =15V, I D =2.5A
R G @ 6.0Ω, V GS =10V
V DS =15V,V GS =5V,
I D =2.5A
V DS =15V,V GS =10V,
I D =2.5A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =1.7A,
V GS =0V
17.7
ns
T J =25°C, I F =2.5A,
di/dt= 100A/µs
13.0
nC
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JULY 2002
4
ZXMN3A01F
10V
T = 25°C
10
7V
T = 150°C
5V
4.5V
ID Drain Current (A)
ID Drain Current (A)
TYPICAL CHARACTERISTICS
4V
3.5V
1
3V
VGS
0.1
2.5V
0.1
1
5V
1
4V
3.5V
3V
2.5V
VGS
0.1
2V
10
0.1
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
1.6
VDS = 10V
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
7V
4.5V
VDS Drain-Source Voltage (V)
T = 150°C
1
T = 25°C
0.1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
3.5V
4V
1
VGS
5V
7V
0.1
10V
T = 25°C
1
ID Drain Current (A)
VGS = VDS
ID = 250uA
0.6
0.4
-50
0
50
100
150
Normalised Curves v Temperature
4.5V
0.1
VGS(th)
0.8
Tj Junction Temperature (°C)
ISD Reverse Drain Current (A)
) W
(
3V
RDS(on)
1.2
Typical Transfer Characteristics
2.5V
VGS = 10V
ID = 2.5A
1.4
VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance
10V
10
10
10
T = 150°C
1
T = 25°C
0.1
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
ISSUE 2 - JULY 2002
5
ZXMN3A01F
TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
250
VGS Gate-Source Voltage (V)
C Capacitance (pF)
300
200
CISS
150
COSS
CRSS
100
50
0
0.1
1
10
ID = 2.5A
8
6
VDS = 15V
4
2
0
0
1
2
3
4
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
ISSUE 2 - JULY 2002
6
ZXMN3A01F
PACKAGE OUTLINE
PAD LAYOUT
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MIN
MAX
MIN
MAX
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
MILLIMETRES
DIM
INCHES
MIN
MAX
MIN
MAX
H
0.33
0.51
0.013
0.020
K
0.01
0.10
0.0004
0.004
C
ᎏ
1.10
ᎏ
0.043
L
2.10
2.50
0.083
0.0985
D
0.37
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
F
0.085
0.15
0.0034
0.0059
N
0.95 NOM
0.0375 NOM
␸
10⬚ TYP
10⬚ TYP
G
1.90 NOM
0.075 NOM
© Zetex plc 2002
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
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ISSUE 2 - JULY 2002
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