MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Complementary PNP Types Available (MMBTA55 / MMBTA56) Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G G 1.78 2.05 H H 2.65 3.05 J 0.013 0.15 A C TOP VIEW B C Mechanical Data · · · · · · E B Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram MMBTA05 Marking: K1G, K1H, R1H MMBTA06 Marking: K1G, R1G Weight: 0.008 grams (approx.) D E M K J L K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol MMBTA05 MMBTA06 Unit Collector-Base Voltage Characteristic VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 4.0 V Collector Current - Continuous (Note 1) IC 500 mA Power Dissipation (Note 1) Pd 350 mW RqJA 357 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage MMBTA05 MMBTA06 V(BR)CBO 60 80 ¾ V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage MMBTA05 MMBTA06 V(BR)CEO 60 80 ¾ V IC = 1.0mA, IB = 0 V(BR)EBO 4.0 ¾ V IE = 100mA, IC = 0 ICBO ¾ 100 nA ICES ¾ 100 nA hFE 100 ¾ ¾ IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.25 V IC = 100mA, IB = 10mA Base- Emitter Saturation Voltage VBE(SAT) ¾ 1.2 V IC = 100mA, VCE = 1.0V fT 100 ¾ MHz VCE = 2.0V, IC = 10mA, f = 100MHz Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current MMBTA05 MMBTA06 MMBTA05 MMBTA06 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30037 Rev. C-2 1 of 2 MMBTA05 / MMBTA06 1000 TA = +125ºC VCE = 1V hFE, PULSED CURRENT GAIN PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 TA = -40ºC 100 TA = +25ºC 10 50 1 0 0 25 50 75 100 125 175 150 200 10 1 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Typical Pulsed Current Gain vs. Collector Current VCE, COLLECTOR EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 IC = 30mA 1.2 1.0 IC = 10mA 0.8 0.6 IC = 100mA 0.4 IC = 1mA 0.2 0 0.001 0.01 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region ICBO, COLLECTOR-BASE CURRENT (nA) 10 VCB = 80V 1 0.1 0.01 25 50 75 100 125 TA, AMBIENT TEMPERATURE (ºC) Fig. 4 Typical Collector-Cutoff Current vs. Ambient Temperature DS30037 Rev. C-2 2 of 2 MMBTA05 / MMBTA06