SPICE MODEL: MMBTA05 MMBTA06 MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBTA55 / MMBTA56) Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT-23 A B • • • • 0.51 C 1.20 1.40 C 2.30 2.50 D D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0° 8° G H Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). MMBTA05 Marking (See Page 3): K1G, K1H MMBTA06 Marking (See Page 3): K1G Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings Max 0.37 B E • • • • Min A TOP VIEW Mechanical Data • • Dim K J M L 3 C B E 1 2 All Dimensions in mm @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG MMBTA05 60 60 MMBTA06 80 80 Unit V V V mA mW °C/W °C 4.0 500 300 417 -55 to +150 @TA = 25°C unless otherwise specified Symbol MMBTA05 MMBTA06 MMBTA05 MMBTA06 MMBTA05 MMBTA06 MMBTA05 MMBTA06 Min Max Unit ⎯ V IC = 100μA, IE = 0 ⎯ V IC = 1.0mA, IB = 0 V(BR)EBO 60 80 60 80 4.0 ⎯ V ICBO ⎯ 100 nA ICES ⎯ 100 nA IE = 100μA, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V hFE 100 ⎯ ⎯ VCE(SAT) VBE(SAT) ⎯ ⎯ 0.25 1.2 V V fT 100 ⎯ MHz V(BR)CBO V(BR)CEO Test Condition B ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Note: IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, IB = 10mA IC = 100mA, VCE = 1.0V B VCE = 2.0V, IC = 10mA, f = 100MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. DS30037 Rev. 10 - 2 1 of 3 www.diodes.com MMBTA05 / MMBTA06 © Diodes Incorporated 400 10 ICBO, COLLECTOR-BASE CURRENT (nA) Note 1 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 25 50 75 100 125 175 150 1 0.1 0.01 25 0 0 VCB = 80V 200 VCE, COLLECTOR EMITTER VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 2.0 75 100 125 1.8 1.6 1.4 IC = 30mA 1.2 1.0 IC = 10mA 0.8 0.6 0.4 0.2 IC = 100mA IC = 1mA 0 0.001 1 0.1 0.01 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region 10,000 VCE = 5V 0.500 IC IB = 10 0.450 0.400 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR-EMITTER VOLTAGE (V) 50 TA, AMBIENT TEMPERATURE (ºC) Fig. 2 Typical Collector-Cutoff Current vs. Ambient Temperature 0.350 0.300 TA = 25°C 0.250 TA = 150°C 0.200 0.150 0.100 0.050 TA = 150°C 1,000 100 TA = -50°C TA = 25°C 10 TA = -50°C 0 1 10 100 1000 1 1 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current DS30037 Rev. 10 - 2 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current 2 of 3 www.diodes.com MMBTA05 / MMBTA06 © Diodes Incorporated 1000 VCE = 5V 0.9 fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 VCE = 5V 100 10 1 0.1 1 0.1 10 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs Collector Current Ordering Information (Note 4) Packaging SOT-23 SOT-23 Device MMBTA05-7-F MMBTA06-7-F Notes: Shipping 3000/Tape & Reel 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K1x Date Code Key Year 1998 Code J K1x = Product Type Marking Code, e.g. K1G YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1999 2000 2001 2002 2003 2004 K L M N P R 2005 S 2006 T 2007 U Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 Aug 8 2008 V 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30037 Rev. 10 - 2 3 of 3 www.diodes.com MMBTA05 / MMBTA06 © Diodes Incorporated