FMMT2222 FMMT2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL FMMT2222 MIN. MAX. 250 fT FMMT2222A MIN. MAX. 300 UNIT MHz Transition Frequency Output Capacitance Cobo 8 8 pF Input Capacitance Cibo 30 25 pF Delay Time Rise Time td tr 10 25 10 25 ns ns Storage Time Fall Time FMMT2222 FMMT2222A SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS 225 60 ts tf 225 60 CONDITIONS. IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0, f=140KHz VEB=0.5V, IC=0 f=140KHz VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCC=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) ns ns DELAY AND RISE TEST CIRCUIT 200Ω 619Ω Scope: Rin > 100 kΩ Cin < 12 pF Rise Time < 5 ns 0.5V STORAGE TIME AND FALL TIME TEST CIRCUIT +30V =100µs <5ns 200Ω +16.2 V 0 1KΩ Scope: R > 100 kΩ C < 12 pF Rise Time < 5 ns in 1N916 -13.8 V =500µs Duty cycle = 2% B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 5 Continuous Collector Current IC 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW -55 to +150 °C 6 V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Generator rise time <2ns Pulse width (t1)<200ns Duty cycle = 2% 0 E C Operating and Storage Temperature Range Tj:Tstg +30V 9.9V ISSUE 3 FEBRUARY 1996 FEATURES * Fast switching PARTMARKING DETAILS FMMT2222 1BZ FMMT2222A 1P FMMT2222R 2P FMMT2222AR 3P COMPLEMENTARY TYPES FMMT2222 FMMT2907 FMMT2222A FMMT2907A in -3V PARAMETER SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current V(BR)CBO FMMT2222 FMMT2222A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 60 75 V IC=10µA, IE=0 V(BR)CEO 30 40 V IC=10mA, IB=0 V(BR)EBO 5 6 V IE=10µA, IC=0 nA Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio 10 ICBO 10 10 nA µA nA VCB=50V, IE=0 VCB=60V, IE=0 VCB=50V, IE=0, Tamb=150°C VCB=60V, IE=0, Tamb=150°C VEB=3V, IC=0 µA IEBO 10 10 10 ICEX 10 10 nA VCE=60V, VEB(off)=3V VCE(sat) 0.3 1.0 2.0 2.6 0.3 1.0 1.2 2.0 V V V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb=-55°C IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* VBE(sat) 0.6 hFE 35 50 75 35 100 50 30 300 0.6 35 50 75 35 100 50 40 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device FMMT2222 FMMT2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL FMMT2222 MIN. MAX. 250 fT FMMT2222A MIN. MAX. 300 UNIT MHz Transition Frequency Output Capacitance Cobo 8 8 pF Input Capacitance Cibo 30 25 pF Delay Time Rise Time td tr 10 25 10 25 ns ns Storage Time Fall Time FMMT2222 FMMT2222A SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS 225 60 ts tf 225 60 CONDITIONS. IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0, f=140KHz VEB=0.5V, IC=0 f=140KHz VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCC=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) ns ns DELAY AND RISE TEST CIRCUIT 200Ω 619Ω Scope: Rin > 100 kΩ Cin < 12 pF Rise Time < 5 ns 0.5V STORAGE TIME AND FALL TIME TEST CIRCUIT +30V =100µs <5ns 200Ω +16.2 V 0 1KΩ Scope: R > 100 kΩ C < 12 pF Rise Time < 5 ns in 1N916 -13.8 V =500µs Duty cycle = 2% B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 5 Continuous Collector Current IC 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW -55 to +150 °C 6 V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Generator rise time <2ns Pulse width (t1)<200ns Duty cycle = 2% 0 E C Operating and Storage Temperature Range Tj:Tstg +30V 9.9V ISSUE 3 FEBRUARY 1996 FEATURES * Fast switching PARTMARKING DETAILS FMMT2222 1BZ FMMT2222A 1P FMMT2222R 2P FMMT2222AR 3P COMPLEMENTARY TYPES FMMT2222 FMMT2907 FMMT2222A FMMT2907A in -3V PARAMETER SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current V(BR)CBO FMMT2222 FMMT2222A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 60 75 V IC=10µA, IE=0 V(BR)CEO 30 40 V IC=10mA, IB=0 V(BR)EBO 5 6 V IE=10µA, IC=0 nA Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio 10 ICBO 10 10 nA µA nA VCB=50V, IE=0 VCB=60V, IE=0 VCB=50V, IE=0, Tamb=150°C VCB=60V, IE=0, Tamb=150°C VEB=3V, IC=0 µA IEBO 10 10 10 ICEX 10 10 nA VCE=60V, VEB(off)=3V VCE(sat) 0.3 1.0 2.0 2.6 0.3 1.0 1.2 2.0 V V V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb=-55°C IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* VBE(sat) 0.6 hFE 35 50 75 35 100 50 30 300 0.6 35 50 75 35 100 50 40 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device