DIODES DN0150ALP4-7

DN0150ALP4 / DN0150BLP4
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
NEW PRODUCT
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Features
Mechanical Data
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Epitaxial Die Construction
Ultra-Small Leadless Surface Mount Package
Ultra Low Profile (0.4mm max)
Complementary PNP Type Available (DP0150ALP4 /
DP0150BLP4)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q 101 Standards for High Reliability
Case: DFN1006H4-3
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections Indicator: Collector Dot
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Ordering Information: See Page 3
Marking Information: See Page 3
Weight: 0.0008 grams (approximate)
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1
3
E
2
B
C
Bottom View
Maximum Ratings
Top View
Device Schematic
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Peak Pulse Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
60
Unit
V
50
5
100
200
30
V
V
mA
mA
mA
Symbol
PD
RθJA
TJ, TSTG
Value
450
278
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
DN0150ADJ
DN0150BDJ
SMALL SIGNAL CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
60
50
5
—
—
—
—
—
—
—
—
—
—
0.1
0.1
V
V
V
μA
μA
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 60V, IE = 0
VEB = 5V, IC = 0
VCE(SAT)
0.10
—
—
0.25
240
400
V
IC = 100mA, IB = 10mA
hFE
—
120
200
—
VCE = 6V, IC = 2mA
Transition Frequency
fT
60
—
—
MHz
Output Capactiance
Cob
—
1.3
—
pF
Notes:
1.
2.
3.
4.
Test Condition
VCE = 10V, IE = -1mA
f = 30MHz
VCB = 10V, IE = 0,
f = 1MHz
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
1 of 4
www.diodes.com
July 2009
© Diodes Incorporated
DN0150ALP4 / DN0150BLP4
0.20
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
500
400
300
200
100
0.15
IB = 1mA
IB = 2mA
IB = 3mA
0.10
IB = 4mA
IB = 5mA
0.05
RθJA = 278°C/W
0
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
0
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
TA = 85°C
T A = 25°C
TA = -55°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
vs. Collector Current (DN0150BLP4)
IC/IB = 10
1.0
0.8
TA = -55°C
0.6
T A = 25°C
TA = 85°C
T A = 150°C
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
1
IC/IB = 10
TA = 150°C
0.1
T A = 85°C
TA = 25°C
TA = -55°C
0.01
0.0001
1,000
1.2
0.2
5
VCE = 6V
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
TA = 150°C
0.4
1
2
3
4
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (DN0150BLP4)
1
1,000
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
NEW PRODUCT
600
2 of 4
www.diodes.com
1.2
VCE = 6V
1.0
0.8
T A = -55°C
0.6
0.4
TA = 25°C
TA = 85°C
T A = 150°C
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
July 2009
© Diodes Incorporated
DN0150ALP4 / DN0150BLP4
320
100
fT, GAIN-BANDWIDTH PRODUCT (MHz)
NEW PRODUCT
CAPACITANCE (pF)
f = 1MHz
10
Cibo
1
Cobo
0
0.1
200
160
120
80
40
VCE = 6V
f = 30MHz
0
2
4
6
8
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
10
(Note 5)
Device
DN0150ALP4-7
DN0150BLP4-7
5.
240
0
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
Ordering Information
Notes:
280
Packaging
DFN1006H4-3
DFN1006H4-3
Shipping
3000/Tape & Reel
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DFN1006H4-3 Taping orientation
xx
xx= Product Type Marking Code:
T3 = DN0150ALP4
T4 = DN0150BLP4
Dot Denotes Collector Side
xx
xx
Direction of feed
Package Outline Dimensions
A
A1
D
b1
E
e
b2
L2
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
L3
DFN1006H4-3
Dim Min
Max
Typ
A
0.40
⎯
⎯
A1
0
0.05 0.02
b1
0.10 0.20 0.15
b2
0.45 0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35
⎯
⎯
L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
L1
3 of 4
www.diodes.com
July 2009
© Diodes Incorporated
DN0150ALP4 / DN0150BLP4
Suggested Pad Layout
C
Dimensions
Z
G1
G2
X
X1
Y
C
NEW PRODUCT
X1
X
G2
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
G1
Y
Z
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
4 of 4
www.diodes.com
July 2009
© Diodes Incorporated