2DB1182Q 32V PNP SURFACE MOUNT TRANSISTOR IN TO252 Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: TO252 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin, Solderable per MIL-STD-202, Method 208 Weight: 0.34 grams (approximate) TO252 C B E Device Schematic Top View Pin Out Configuration Top view Ordering Information (Note 3) Product 2DB1182Q-13 Notes: Marking 2DB1182Q Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information YYWW 2DB1182Q 2DB1182Q Document number: DS35651 Rev. 1 - 2 2DB1182Q = Product Type Marking Code = Manufacturers’ code marking YYWW = Date Code Marking YY = Last Digit of Year, (ex: 08 = 2008) WW = Week Code (01 - 53) 1 of 5 www.diodes.com November 2011 © Diodes Incorporated 2DB1182Q Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -40 -32 -5 -2 -3 Unit V V V A A Value 10 -55 to +150 Unit W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Operating and Storage Temperature Range Symbol PD TJ, TSTG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance Symbol Min Typ Max Unit Test Condition BVCBO BVCEO BVEBO ICBO IEBO -40 -32 -5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 -1 V V V μA μA IC = -50μA, IE = 0 IC = -1mA, IB = 0 IE = -50μA, IC = 0 VCB = -20V, IE = 0 VEB = - 4V, IC = 0 VCE(sat) hFE ⎯ 120 ⎯ ⎯ -0.8 270 V ⎯ IC = -2A, IB = -0.2A VCE = -3V, IC = -0.5A fT ⎯ 110 ⎯ MHz Cobo ⎯ 26 ⎯ pF VCE = -5V, IC = -0.1A, f = 30MHz VCB = -10V, f = 1MHz 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. Notes: 1,000 400 VCE = -3V 800 600 IB = -5mA hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (mA) 350 IB = -4mA IB = -3mA 400 IB = -2mA TA = 150°C 300 TA = 125°C 250 T A = 85°C 200 TA = 25°C 150 100 200 TA = -55°C IB = -1mA 50 0 0.1 1 10 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage 2DB1182Q Document number: DS35651 Rev. 1 - 2 2 of 5 www.diodes.com 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current November 2011 © Diodes Incorporated 0.4 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.3 0.2 TA = 150°C TA = 125°C 0.1 T A = 85°C TA = 25°C T A = -55°C 0 0.001 1.2 VCE = -3V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 125°C 0.2 TA = 150°C 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 f = 1MHz IC/IB = 10 1.0 0.8 CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 2DB1182Q T A = -55°C TA = 25°C 0.6 TA = 85°C T A = 125°C 0.4 TA = 150°C Cibo 100 Cobo 0.2 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 140 120 VCE = -5V f = 30MHz 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current 2DB1182Q Document number: DS35651 Rev. 1 - 2 3 of 5 www.diodes.com November 2011 © Diodes Incorporated 2DB1182Q Package Outline Dimensions E TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 2.286 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout X2 Y2 C Y1 X1 2DB1182Q Document number: DS35651 Rev. 1 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 4 of 5 www.diodes.com November 2011 © Diodes Incorporated 2DB1182Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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