Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver FEATURES PHN603S SYMBOL • Schottky diode across each MOSFET • Low on-state resistance • Fast switching • Logic level compatible • Surface mount package QUICK REFERENCE DATA D4 VDS = 25 V G6 G5 G4 ID = 5.5 A D1 D2 D3 RDS(ON) ≤ 35 mΩ (VGS = 10 V) G1 G2 G3 S1 S2 RDS(ON) ≤ 55 mΩ (VGS = 4.5 V) S3 GENERAL DESCRIPTION PINNING Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brushless d.c. motor driver. PIN DESCRIPTION 1,4 2 3 5,8 6 7 9,12 10 11 13 14-16, 18-20, 22-24 17 21 drain 1 source 1 gate 1 drain 2 source 2 gate 2 drain 3 source 3 gate 3 gate 4 drain 4 gate 5 gate 6 The PHN603S is supplied in the SOT137-1 (SO24) surface mounting package. SOT137-1 (SO24) Top view 1 24 12 13 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDS Repetitive peak drain-source voltage Continuous drain-source voltage Drain-gate voltage Gate-source voltage Drain current per device (DC) VDS VDGR VGS ID IDM Ptot Ptot Tstg, Tj Drain current per device (pulse peak value) Total power dissipation per device Total power dissipation all devices conducting Storage & operating temperature MIN. MAX. UNIT Tj = 25 ˚C to 150˚C - 25 V Tj ≤ 80 ˚C1 RGS = 20 kΩ - 25 25 ± 20 5.5 3.5 22 V V V A A A - 55 1.67 0.67 2.78 1.11 150 W W W W ˚C Ta = 25 ˚C Ta = 100 ˚C Ta = 25 ˚C Ta = 25 ˚C Ta = 100 ˚C Ta = 25 ˚C Ta = 100 ˚C 1 The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited by thermal runaway. October 1998 1 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver PHN603S THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-a Thermal resistance junction to ambient FR4 board, minimum footprint Per device All devices conducting TYP. MAX. UNIT 75 42 - K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS VGS = 0 V; ID = 1 mA VGS(TO) Drain-source breakdown voltage Gate threshold voltage MIN. VDS = VGS; ID = 1 mA Tj = 150˚C RDS(ON) IGSS IDSS Drain-source on-state resistance VGS = 10 V; ID = 5 A VGS = 4.5 V; ID = 2.5 A VGS = 10 V; ID = 5 A; Tj = 150˚C Gate source leakage current VGS = ±20 V; VDS = 0 V Zero gate voltage drain VDS = 25 V; VGS = 0 V; current Tj = 100˚C TYP. MAX. UNIT 25 - - V 1.0 0.4 - 1.8 30 50 50 10 0.2 5 35 55 60 100 1.0 10 V V mΩ mΩ mΩ nA mA mA Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 1 A; VDD = 20 V; VGS = 10 V - 17 1.7 5.2 - nC nC nC td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 20 V; ID = 1 A; VGS = 10 V; RG = 6 Ω Resistive load - 8 11 31 17 - ns ns ns ns Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 20 V; f = 1 MHz - 650 320 130 - pF pF pF SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IF Ta = 25 ˚C VF Continuous forward diode current Repetitive peak forward diode current Diode forward voltage trr Reverse recovery time IFRM October 1998 IF = 2.5 A; VGS = 0 V IF = 2.5 A; VGS = 0 V, Tj = 100 ˚C IF = 0.5 A to IR = 0.5 A 2 MIN. TYP. MAX. UNIT - - 5.5 A - - 22 A - 0.4 0.3 20 0.6 0.55 - V V ns Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver PHN603S Normalised Power Dissipation, PD (%) MOSFET Transient Thermal Impedance, Zth j-a (K/W) 100 120 D = 0.5 100 10 80 0.2 0.1 0.05 60 1 PD 0.02 40 0.1 20 tp D = tp/T Single pulse t T 0 0 25 50 75 100 125 0.01 1E-06 150 Ambient Temperature, Ta (C) Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ta) 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Fig.4. Transient thermal impedance; MOSFET. Zth j-a = f(t); parameter D = tp/T Normalised Drain Current, ID (%) Transient Thermal Impedance, Zth j-a (K/W) SCHOTTKY 100 120 100 10 80 Single pulse 60 1 PD 40 tp 0.1 20 t 0 0 25 50 75 100 125 0.01 1E-06 150 Ambient Temperature, Ta (C) Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ta); conditions: VGS ≥ 4.5 V 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Fig.5. Transient thermal impedance; Schottky Diode. Zth j-a = f(t) junctions 1 ms MOSFET 10 ms 1 100 ms 6 PAIRS SCHOTTKY MOSFET 40K/W Rth j-b 10 40K/W tp = 100 us 40K/W RDS(on) = VDS/ ID PHN603S 40K/W 100 Peak Pulsed Drain Current, IDM (A) SCHOTTKY board Rth b-a 35K/W d.c. 0.1 0.01 0.1 1 10 Drain-Source Voltage, VDS (V) 100 ambient Fig.3. Safe operating area. Ta = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp October 1998 Fig.6. Thermal model; typical values. Rth j-b and Rth b-a 3 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver Drain Current, ID (A) 5 PHN603S VDS > ID X RDS(ON) 9 4.5 V VGS = 3.4 V Tj = 25 C PHN603S Transconductance, gfs (S) 10 PHN603S Tj = 25 C 8 4 150 C 7 3.2 V 10V 6 3 5 4 3V 2 3 2.8 V 2 2.6 V 1 1 2.4 V 0 0 0 0 1 2 3 4 Drain-Source Voltage, VDS (V) 3V 2.8V 1.5 2 2.5 3 3.5 4 4.5 5 Fig.10. Typical transconductance, Tj = 25 ˚C. gfs = f(ID) PHN603S Drain-Source On Resistance, RDS(on) (Ohms) 0.45 1 Drain current, ID (A) Fig.7. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS 0.5 0.5 5 2 a SOT223 30V Trench Normalised RDS(ON) = f(Tj) VGS = 3.4 V 3.2V 0.4 1.5 0.35 Tj = 25 C 0.3 1 0.25 0.2 0.15 0.5 0.1 4.5V 10V 0.05 0 0 1 2 3 Drain Current, ID (A) 4 0 -50 5 Fig.8. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 50 Tj / C 100 150 Fig.11. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 ˚C = f(Tj) PHN603S Drain current, ID (A) 0 5 5 VGS(TO) / V PHN1013 VDS > ID X RDS(ON) 4.5 4 4 3.5 3 3 2.5 2 150 C 1.5 1 2 min. Tj = 25 C 0.5 typ. 1 0 0 0.5 1 1.5 2 2.5 3 3.5 0 -100 Gate-source voltage, VGS (V) Fig.9. Typical transfer characteristics. ID = f(VGS) October 1998 -50 0 50 Tj / C 100 150 200 Fig.12. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 4 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver 100mA PHN603S Sub-Threshold Conduction Drain current, ID (A) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 10mA min 1mA typ 100uA 10uA VDS = VGS Tj = 25 C 1uA ID = 1A Tj = 25 C VDD = 20 V 0 0 1 2 3 Gate-source voltage, VGS (V) 4 5 10 15 Gate charge, QG (nC) 5 Fig.13. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C PHN603S Gate-source voltage, VGS (V) 20 Fig.15. Typical turn-on gate-charge characteristics. VGS = f(QG) Source-Drain Diode Current, IF (A) Capacitances, Ciss, Coss, Crss (pF) 25 PHN603S 5 PHN603S 10000 VGS = 0 V 4.5 4 3.5 150 C 3 Tj = 25 C 2.5 1000 2 Ciss 1.5 1 Coss 0.5 Crss 0 100 0 0.1 1 10 Drain-Source Voltage, VDS (V) 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-Source Voltage, VSDS (V) Fig.14. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz October 1998 0.1 Fig.16. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj 5 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver PHN603S MECHANICAL DATA SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1 D E A X c HE y v M A Z 13 24 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 12 e detail X w M bp 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 mm 2.65 0.30 0.10 inches 0.10 A3 bp c D (1) E (1) 2.45 2.25 0.25 0.49 0.36 0.32 0.23 15.6 15.2 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.61 0.60 e HE 7.6 7.4 1.27 10.65 10.00 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 v w y (1) L Lp Q 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z θ o 8 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT137-1 075E05 MS-013AD EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 Fig.17. SOT137-1 (SO24) surface mounting package. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to Integrated Circuit Packages, Data Handbook IC26. 3. Epoxy meets UL94 V0 at 1/8". October 1998 6 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver PHN603S DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 7 Rev 1.000