ONSEMI PZT2907AT1

Order this document
by PZT2907AT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
This PNP Silicon Epitaxial transistor is designed for use in linear and
switching applications. The device is housed in the SOT-223 package which is
designed for medium power surface mount applications.
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
• NPN Complement is PZT2222AT1
• The SOT-223 package can be soldered using wave or reflow
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
• Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
COLLECTOR
2,4
4
1
BASE 1
2
3
CASE 318E-04, STYLE 1
TO-261AA
3
EMITTER
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
– 60
Vdc
Collector-Base Voltage
VCBO
– 60
Vdc
Emitter-Base Voltage
VEBO
– 5.0
Vdc
Collector Current
IC
– 600
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 65 to 150
°C
RθJA
83.3
°C/W
TL
260
10
°C
Sec
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Lead Temperature for Soldering, 0.0625″ from case
Time in Solder Bath
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = –10 µAdc, IE = 0)
V(BR)CBO
– 60
°—°
—
Vdc
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
– 60
—
—
Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
V(BR)EBO
– 5.0
°—°
—
Vdc
Collector-Base Cutoff Current (VCB = – 50 Vdc, IE = 0)
ICBO
—
°—°
–10
nAdc
Collector-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = 0.5 Vdc)
ICEX
—
—
– 50
nAdc
Base-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = – 0.5 Vdc)
IBEX
—
—
– 50
nAdc
Characteristic
OFF CHARACTERISTICS
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
Small–Signal
Motorola
Motorola, Inc.
1996
Transistors, FETs and Diodes Device Data
1
PZT2907AT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
75
100
100
100
50
—
—
—
—
—
—
—
—
300
—
—
—
—
—
– 0.4
–1.6
—
—
—
—
–1.3
– 2.6
Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = – 0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = – 500 mAdc, VCE = –10 Vdc)
hFE
Collector-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = – 50 mAdc)
VCE(sat)
Base-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = – 50 mAdc)
VBE(sat)
—
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (IC = – 50 mAdc, VCE = – 20 Vdc, f = 100 MHz)
fT
200
—
—
MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cc
—
—
8.0
pF
Input Capacitance (VEB = – 2.0 Vdc, IC = 0, f = 1.0 MHz)
Ce
—
—
30
pF
ton
—
—
45
ns
td
—
—
10
tr
—
—
40
toff
—
—
100
ts
—
—
80
tf
—
—
30
SWITCHING TIMES
Turn-On Time
(VCC = – 30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
Delay Time
Rise Time
Turn-Off Time
(VCC = – 6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
Storage Time
Fall Time
ns
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.
– 30 V
INPUT
Zo = 50 Ω
PRF = 150 Hz
RISE TIME ≤ 2.0 ns
1.0 k
50
200 ns
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
– 6.0 V
37
1.0 k
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1.0 k
0
– 30 V
50
1N916
200 ns
Figure 1. Delay and Rise
Time Test Circuit
2
INPUT
Zo = 50 Ω
PRF = 150 Hz
RISE TIME ≤ 2.0 ns
200
0
– 16 V
+15 V
Figure 2. Storage and Fall
Time Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PZT2907AT1
1000
hFE, CURRENT GAIN
TJ = 125°C
TJ = 25°C
100
TJ = – 55°C
10
– 0.1
–1.0
–10
–100
IC, COLLECTOR CURRENT (mA)
–1000
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
VCE = – 20 V
TJ = 25°C
10
–1.0
Figure 3. DC Current Gain
–10
–100
IC, COLLECTOR CURRENT (mA)
–1000
Figure 4. Current Gain Bandwidth Product
–1.0
30
TJ = 25°C
– 0.6
20
VBE(sat) @ IC/IB = 10
Ceb
CAPACITANCE (pF)
VOLTAGE (VOLTS)
– 0.8
VBE(on) @ VCE = –10 V
– 0.4
– 0.2
7.0
Ccb
5.0
3.0
VCE(sat) @ IC/IB = 10
0
– 0.1 – 0.2 – 0.5 –1.0 – 2.0 – 5.0 –10 – 20 – 50 –100 – 200
IC, COLLECTOR CURRENT (mA)
10
– 500
Figure 5. “ON” Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
– 0.1
– 0.2 – 0.3 – 0.5 – 0.7 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30
REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitances
3
PZT2907AT1
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
POWER DISSIPATION
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 1.5 watts.
The power dissipation of the SOT-223 is a function of the
pad size. These can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the SOT-223
package, PD can be calculated as follows.
PD =
PD =
150°C – 25°C
83.3°C/W
= 1.5 watts
The 83.3°C/W for the SOT-223 package assumes the
recommended collector pad area of 965 sq. mils on a glass
epoxy printed circuit board to achieve a power dissipation of
1.5 watts. If space is at a premium, a more realistic
approach is to use the device at a PD of 833 mW using the
footprint shown. Using a board material such as Thermal
Clad, a power dissipation of 1.6 watts can be achieved using
the same footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
MOUNTING PRECAUTIONS
• The soldering temperature and time should not exceed
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient should be 5°C or less.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.15
3.8
0.079
2.0
0.248
6.3
0.091
2.3
0.091
2.3
0.079
2.0
0.059
1.5
4
0.059
1.5
0.059
1.5
inches
mm
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PZT2907AT1
PACKAGE DIMENSIONS
A
F
STYLE 1:
PIN 1.
2.
3.
4.
4
S
B
1
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
BASE
COLLECTOR
EMITTER
COLLECTOR
D
L
G
J
C
0.08 (0003)
H
M
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
K
CASE 318E–04
ISSUE H
TO-261AA
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PZT2907AT1
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
6
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◊
*PZT2907AT1/D*
PZT2907AT1/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data