DNLS160V LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DPLS160V) Surface Mount Package Suited for Automated Assembly Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 1) "Green Device" (Note 2) Qualified to AEC-Q 101 Standards for High Reliability SOT-563 Mechanical Data • • • • • • • 6 Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.003 grams (approximate) Maximum Ratings 5 4 1, 2, 5, 6 3 1 2 4 3 @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current (DC) Symbol VCBO VCEO VEBO IC ICM IB Value 80 60 5 1 2 300 Unit V V V A A mA Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS31248 Rev. 3 - 2 1 of 4 www.diodes.com DNLS160V © Diodes Incorporated Electrical Characteristics Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 80 60 5 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) ICES IEBO ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 100 V V V nA μA nA nA DC Current Gain hFE 250 200 100 320 280 165 ⎯ ⎯ ⎯ V 80 80 140 110 140 250 mV 140 0.91 0.81 250 1.1 0.9 mΩ V V VCE = 5V, IC = 1mA VCE = 5V, IC = 500mA VCE = 5V, IC = 1A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1A, IB = 50mA VCE = 5V, IC = 1A VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz Collector-Emitter Saturation Voltage VCE(SAT) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time RCE(SAT) VBE(SAT) VBE(ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Cobo fT ⎯ 150 7 270 10 ⎯ pF MHz ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 90 17 73 300 220 80 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ns ns ns ns ns Notes: Test Condition IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 100μA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C VCE = 60V, VBE = 0 VEB = 5V, IC = 0 VCC = 10V IC = 0.5A, IB1 = IB2 = 25mA 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 300 PD, POWER DISSIPATION (mW) NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage @TA = 25°C unless otherwise specified 250 200 150 100 50 0 0 DS31248 Rev. 3 - 2 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Maximum Power Dissipation vs. Ambient Temperature 150 Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 2 of 4 www.diodes.com DNLS160V © Diodes Incorporated NEW PRODUCT Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.001 Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.01 0.1 1 10 Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 120 100 80 60 40 VCE =10V f = 100MHz 20 0 Fig. 7 Typical Capacitance Characteristics DS31248 Rev. 3 - 2 Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 3 of 4 www.diodes.com DNLS160V © Diodes Incorporated Ordering Information (Note 5) Device DNLS160V-7 NEW PRODUCT Notes: 5. Packaging SOT-563 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NK1 Date Code Key Year Code 2008 V Month Code Jan 1 2009 W Feb 2 Mar 3 YM NK1 = Product Type Marking Code YM = Date Code Marking Y = Year ex: V = 2008 M = Month ex: 9 = September 2010 X Apr 4 2011 Y May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C D G M K H SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L Suggested Pad Layout (in mm) 0.5 2.2 1.2 0.5 1.7 0.5 0.375 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31248 Rev. 3 - 2 4 of 4 www.diodes.com DNLS160V © Diodes Incorporated