DIODES ZXMP10A18GTC

ZXMP10A18G
100V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = - 100V : RDS(on) = 0.150
; ID = - 3.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT223
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Relay and Solenoid driving
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP10A18GTA
7”
12mm
1,000 units
ZXMP10A18GTC
13”
12mm
4,000 units
PINOUT
DEVICE MARKING
• ZXMP
10A18
ISSUE 1 - MARCH 2005
1
SEMICONDUCTORS
ZXMP10A18G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Drain-Source Voltage
V DSS
-100
Gate-Source Voltage
V GS
±20
V
Continuous Drain Current @ VGS=10V; TA=25°C (b)
@V GS=10V; TA=70°C (b)
ID
-3.7
A
-3.0
A
-2.6
A
@ V GS=10V; TA=25°C (a)
(c)
I DM
-16.5
A
Continuous Source Current (Body Diode) (b)
IS
-5.3
A
Pulsed Source Current (Body Diode) (c)
I SM
-16.5
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
2
W
16
mW/°C
(b)
PD
Pulsed Drain Current
Power Dissipation at T A =25°C
Linear Derating Factor
T j , T stg
Operating and Storage Temperature Range
3.9
W
31
mW/°C
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
R ⍜JA
62.5
°C/W
Junction to Ambient (b)
R ⍜JA
32.2
°C/W
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02 pulse width = 300␮s - pulse width limited by maximum junction temperature.
ISSUE 1 - MARCH 2005
SEMICONDUCTORS
2
ZXMP10A18G
CHARACTERISTICS
ISSUE 1 - MARCH 2005
3
SEMICONDUCTORS
ZXMP10A18G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
-100
TYP.
MAX. UNIT CONDITIONS
STATIC
V
I D = -250␮A, V GS =0V
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
-1
␮A
V DS = -100V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
I D = -250␮A, V DS =V GS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
R DS(on)
-2.0
-4.0
V
0.150
⍀
0.190
⍀
V GS = -10V, I D = -2.8A
V GS = -6V, I D = -2.4A
g fs
6.0
S
V DS = -15V, I D = -2.8A
Input Capacitance
C iss
1055
pF
Output Capacitance
C oss
90
pF
C rss
76
pF
(1)
Resistance
Forward Transconductance (1)(3)
DYNAMIC (3)
Reverse Transfer Capacitance
V DS = -50V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
4.6
ns
Rise Time
tr
6.8
ns
Turn-Off Delay Time
t d(off)
33.9
ns
Fall Time
tf
17.9
ns
Total Gate Charge
Qg
26.9
nC
Gate-Source Charge
Q gs
3.9
nC
Gate-Drain Charge
Q gd
10.2
nC
Diode Forward Voltage (1)
V SD
-0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD = -50V, I D = -1A
R G = 6.0⍀, V GS = -10V
V DS = -50V, V GS = -10V
I D = -2.8A
SOURCE-DRAIN DIODE
-0.95
V
T j =25°C, I S = -3.5A,
49
ns
107
nC
T j =25°C, I S = -2.8A,
di/dt=100A/␮s
V GS =0V
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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SEMICONDUCTORS
4
ZXMP10A18G
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZXMP10A18G
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
6
ZXMP10A18G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
A
Millimetres
Inches
Millimetres
DIM
Min
Max
Min
Max
6.3
6.7
0.248
0.264
G
Min
Max
NOM 4.6
Inches
Min
Max
NOM 0.181
B
3.3
3.7
0.130
0.146
H
0.85
1.05
0.033
0.041
C
-
1.7
-
0.067
K
0.02
0.10
0.0008
0.004
6.7
7.3
0.264
0.287
D
0.6
0.8
0.024
0.031
L
E
2.9
3.1
0.114
0.122
M
F
0.24
0.32
0.009
0.13
NOM 2.3
NOM 0.0905
© Zetex Semiconductors plc 2005
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - MARCH 2005
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SEMICONDUCTORS