DIODES ZXMN3A04DN8

ZXMN3A04DN8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 30V; RDS(ON)= 0.02
; ID= 8.5A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
SO8
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A04DN8TA
7’‘
12mm
500 units
ZXMN3A04DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
ZXMN
3A04D
Top view
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ZXMN3A04DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
LIMIT
UNIT
30
V
V GS
⫾20
V
Continuous Drain Current (V GS =10V; T A =25°C)(b)(d)
(V GS =10V; T A =70°C)(b)(d)
(V GS =10V; T A =25°C)(a)(d)
ID
8.5
6.8
6.5
A
Pulsed Drain Current (c)
I DM
39
A
Continuous Source Current (Body Diode) (b)
IS
3.6
A
Pulsed Source Current (Body Diode)(c)
I SM
39
A
Power Dissipation at T A =25°C (a)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at T A =25°C (a)(e)
Linear Derating Factor
PD
1.81
14.5
W
mW/°C
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
PD
2.15
17.2
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R θJA
100
°C/W
Junction to Ambient (b)(e)
R θJA
69
°C/W
Junction to Ambient (b)(d)
R θJA
58
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
Thermal Impedance Graph.
(d) For a dual device with one active die.
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ZXMN3A04DN8
CHARACTERISTICS
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ZXMN3A04DN8
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
V (BR)DSS
30
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance
(1)
R DS(on)
Forward Transconductance (3)
g fs
Input Capacitance
V
I D =250µA, V GS =0V
0.5
µA
V DS =30V, V GS =0V
100
nA
V GS =±20V, V DS =0V
V
I =250µA, V DS = V GS
Ω
Ω
V GS =10V, I D =12.6A
V GS =4.5V, I D =10.6A
22.1
S
V DS =15V,I D =12.6A
C iss
1890
pF
Output Capacitance
C oss
349
pF
Reverse Transfer Capacitance
C rss
218
pF
1.0
0.02
0.03
D
DYNAMIC (3)
V DS =15V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
5.2
ns
Rise Time
tr
6.1
ns
Turn-Off Delay Time
t d(off)
38.1
ns
Fall Time
tf
20.2
ns
Gate Charge
Qg
19.9
nC
Total Gate Charge
Qg
36.8
nC
Gate-Source Charge
Q gs
5.8
nC
Gate-Drain Charge
Q gd
7.1
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD =15V, I D =1A
R G =6.0Ω, V GS =10V
V DS =15V,V GS =5V,
I D =6.5A
V DS =15V,V GS =10V,
I D =6.5A
SOURCE-DRAIN DIODE
V
T J =25°C, I S =6.8A,
V GS =0V
18.4
ns
T J =25°C, I F =2.3A,
di/dt= 100A/µs
11
nC
0.95
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXMN3A04DN8
TYPICAL CHARACTERISTICS
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ZXMN3A04DN8
TYPICAL CHARACTERISTICS
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ZXMN3A04DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
MILLIMETRES
DIM
MIN
MAX
MIN
MAX
A
0.053
0.069
1.35
1.75
A1
0.004
0.010
0.10
0.25
D
0.189
0.197
4.80
5.00
H
0.228
0.244
5.80
6.20
E
0.150
0.157
3.80
4.00
L
0.016
0.050
0.40
1.27
e
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
0.050 BSC
1.27 BSC
b
0.013
0.020
0.33
0.51
c
0.008
0.010
0.19
0.25
⍜
0⬚
8⬚
0⬚
8⬚
h
0.010
0.020
0.25
0.50
© Zetex plc 2002
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ISSUE 2 - OCTOBER 2002
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