DIODES ZXMN3B01F

ZXMN3B01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V(BR)DSS=30V : RDS(on)=0.15 ; ID=2A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B01FTA
7”
8mm
3000 units
ZXMN3B01FTC
13”
8mm
10000 units
DEVICE MARKING
TOP VIEW
• 3B1
ISSUE 1 - DECEMBER 2005
1
ZXMN3B01F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
30
V
Gate-Source Voltage
V GS
⫾12
V
Continuous Drain Current @ V GS =4.5V; T A =25°C (b)
@ V GS =4.5V; T A =70°C (b)
@ V GS =4.5V; T A =25°C (a)
ID
2.0
A
1.6
A
1.7
A
(c)
I DM
9.4
A
Continuous Source Current (Body Diode) (b)
IS
1.3
A
Pulsed Source Current (Body Diode) (c)
I SM
9.4
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
625
mW
5
mW/°C
(b)
PD
Pulsed Drain Current
Power Dissipation at T A =25°C
Linear Derating Factor
T j , T stg
Operating and Storage Temperature Range
806
mW
6.4
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
Junction to Ambient (b)
Junction to Ambient
VALUE
UNIT
R ⍜JA
200
°C/W
R ⍜JA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
ISSUE 1 - DECEMBER 2005
SEMICONDUCTORS
2
ZXMN3B01F
TYPICAL CHARACTERISTICS
ISSUE 1 - DECEMBER 2005
3
SEMICONDUCTORS
ZXMN3B01F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
30
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
V
I D =250␮A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
1
␮A
V DS =30V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =⫾12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
V
Static Drain-Source On-State
R DS(on)
I =250␮A, V DS = V GS
D
V GS =4.5V, I D =1.7A
0.7
(1)
Resistance
Forward Transconductance (1) (3)
0.150
⍀
0.240
⍀
V GS =2.5V, I D =1.2A
S
V DS =15V,I D =1.7A
g fs
4
Input Capacitance
C iss
258
pF
Output Capacitance
C oss
50
pF
C rss
30
pF
DYNAMIC (3)
Reverse Transfer Capacitance
V DS = 15V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
2.69
ns
Rise Time
tr
3.98
ns
V DD = 15V, V GS = 4.5V
Turn-Off Delay Time
t d(off)
8
ns
I D = 1A
Fall Time
tf
5.27
ns
R G ≅ 6.0⍀
Total Gate Charge
Qg
2.93
nC
Gate-Source Charge
Q gs
0.57
nC
V DS =15V,V GS = 4.5V,
Gate-Drain Charge
Q gd
0.92
nC
I D =1.7A
V SD
0.85
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
0.95
V
T J =25°C, I S = 1.7A,
V GS =0V
Reverse Recovery Time (3)
t rr
10.85
ns
T J =25°C, I F = 1.3A,
Reverse Recovery Charge (3)
Q rr
5
NC
di/dt= 100A/␮s
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - DECEMBER 2005
SEMICONDUCTORS
4
ZXMN3B01F
CHARACTERISTICS
ISSUE 1 - DECEMBER 2005
5
SEMICONDUCTORS
ZXMN3B01F
TYPICAL CHARACTERISTICS
Current
regulator
QG
12V
VG
QGS
50k
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
Switching time test circuit
ISSUE 1 - DECEMBER 2005
SEMICONDUCTORS
6
ZXMN3B01F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETERS
DIM
INCHES
MIN
MAX
MIN
MAX
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
MILLIMETERS
DIM
INCHES
MIN
MAX
MIN
MAX
H
0.33
0.51
0.013
0.020
K
0.01
0.10
0.0004
0.004
C
ᎏ
1.10
ᎏ
0.043
L
2.10
2.50
0.083
0.0985
D
0.37
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
F
0.085
0.15
0.0034
0.0059
N
0.95 NOM
0.0375 NOM
⍜
10⬚ TYP
10⬚ TYP
G
1.90 NOM
0.075 NOM
© Zetex Semiconductors plc 2005
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - DECEMBER 2005
7
SEMICONDUCTORS