DIODES ZXMN3B04N8

ZXMN3B04N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B04N8TA
7”
12mm
500 units
ZXMN3B04N8TC
13”
12mm
2500 units
Top View
DEVICE MARKING
• ZXMN
3B04
ISSUE 2 - MAY 2004
1
SEMICONDUCTORS
ZXMN3B04N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V DSS
30
V
Gate source voltage
V GS
⫾12
V
ID
8.9
A
7.3
A
7.2
A
A
Continuous drain current
@ V GS =4.5V; T A =25°C (b)
@ V GS =4.5V; T A =70°C (b)
@ V GS =4.5V; T A =25°C (a)
(c)
Pulsed drain current
Continuous source current (body diode) (b)
I DM
45
IS
4.5
A
Pulsed source current (body diode) (c)
I SM
45
A
Power dissipation at T A =25°C (a)
Linear derating factor
PD
Power dissipation at T A =25°C (b)
PD
Linear derating factor
T j :T stg
Operating and storage temperature range
2
W
16
mW/°C
3
W
24
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
Junction to ambient (b)
Junction to ambient
VALUE
UNIT
R ⍜JA
62.5
°C/W
R ⍜JA
41.4
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
ISSUE 2 - MAY 2004
SEMICONDUCTORS
2
ZXMN3B04N8
CHARACTERISTICS
ISSUE 2 - MAY 2004
3
SEMICONDUCTORS
ZXMN3B04N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
30
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V (BR)DSS
V
I D =250␮A, V GS =0V
Zero gate voltage drain current
I DSS
0.5
␮A
V DS =30V, V GS =0V
Gate-body leakage
I GSS
100
nA
V GS =⫾12V, V DS =0V
Gate-source threshold voltage
V GS(th)
V
Static drain-source on-state
R DS(on)
0.7
resistance (1)
(1) (3)
0.021
0.025
⍀
I =250␮A, V DS = V GS
D
V GS =4.5V, I D =7.2A
0.028
0.040
⍀
V GS =2.5V, I D =5.7A
V DS =15V,I D =7.2A
g fs
24
S
Input capacitance
C iss
2480
pF
Output capacitance
C oss
318
pF
Reverse transfer capacitance
C rss
184
pF
Forward transconductance
DYNAMIC (3)
V DS =15V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
9
ns
11.5
ns
40
ns
Fall time
tf
16.6
ns
Total gate charge
Qg
23.1
nC
Gate-source charge
Q gs
4.9
nC
Gate-drain charge
Q gd
6.2
nC
Diode forward voltage (1)
V SD
0.85
Reverse recovery time (3)
t rr
Reverse recovery charge (3)
Q rr
V DD =15V, V GS =4.5V
I D =1A
R G ≅6.0⍀,
V DS =15V,V GS =4.5V,
I D =7.2A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =8A,
17.9
ns
T J =25°C, I F =3.2A,
10
nC
di/dt= 100A/␮s
V GS =0V
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - MAY 2004
SEMICONDUCTORS
4
ZXMN3B04N8
TYPICAL CHARACTERISTICS
ISSUE 2 - MAY 2004
5
SEMICONDUCTORS
ZXMN3B04N8
TYPICAL CHARACTERISTICS
ISSUE 2 - MAY 2004
SEMICONDUCTORS
6
ZXMN3B04N8
PACKAGE OUTLINE
⍜
L
H
E
D
P IN 1
A
C
A1
S EATING P LANE
E
B
Controlling dimensions are in inches. Approximate conversions are given in millimeters
PACKAGE DIMENSIONS
Inches
Millimeters
DIM
Inches
Millimeters
DIM
Min
Max
Min
Max
Min
Max
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
⍜
0⬚
8⬚
0⬚
8⬚
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
0.050 BSC
Min
Max
1.27 BSC
© Zetex Semiconductors plc 2004
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For the latest product information, log on to www.zetex.com
ISSUE 2 - MAY 2004
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SEMICONDUCTORS