DIODES ZXMN10A08DN8TC

ZXMN10A08DN8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 100V; RDS(ON) = 0.25
ID = 2.1A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN10A08DN8TA
7”
12mm
500 units
ZXMN10A08DN8TC
13”
12mm
2,500 units
DEVICE MARKING
Top View
• ZXMN
10A08D
ISSUE 4 - JANUARY 2005
1
SEMICONDUCTORS
ZXMN10A08DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-source voltage
V DSS
Gate source voltage
V GS
Continuous drain current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
ID
Pulsed drain current (c)
I DM
Continuous source current (body diode)
Pulsed source current (body diode) (c)
(b)
IS
LIMIT
UNIT
100
V
20
V
2.1
1.7
1.6
A
9
A
2.6
A
I SM
9
A
Power dissipation at T A =25°C (a)
Linear derating factor
PD
1.25
10
W
mW/°C
Power dissipation at T A =25°C (b)
Linear derating factor
PD
1.8
14.5
W
mW/°C
Operating and storage temperature range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient (a)
R θJA
100
°C/W
Junction to ambient (b)
R θJA
69
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
2
ZXMN10A08DN8
TYPICAL CHARACTERISTICS
ISSUE 4 - JANUARY 2005
3
SEMICONDUCTORS
ZXMN10A08DN8
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
100
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-source breakdown voltage
V (BR)DSS
Zero gate voltage drain current
I DSS
Gate-body leakage
I GSS
Gate-source threshold voltage
V GS(th)
Static drain-source on-state resistance (1)
R DS(on)
Forward transconductance (1)(3)
g fs
DYNAMIC
V
I D =250␮A, V GS =0V
V DS =100V, V GS =0V
0.5
␮A
100
nA
V GS =⫾20V, V DS =0V
V
I =250␮A, V DS = V GS
⍀
⍀
V GS =10V, I D =3.2A
V GS =6V, I D =2.6A
5.0
S
V DS =15V,I D =3.2A
2.0
0.25
0.30
D
(3)
Input capacitance
C iss
405
pF
Output capacitance
C oss
28.2
pF
Reverse transfer capacitance
C rss
14.2
pF
ns
SWITCHING
V DS =50 V, V GS =0V,
f=1MHz
(2) (3)
Turn-on delay time
t d(on)
3.4
Rise time
tr
2.2
ns
Turn-off delay time
t d(off)
8
ns
Fall time
tf
3.2
ns
Gate charge
Qg
4.2
nC
Total gate charge
Qg
7.7
nC
Gate-source charge
Q gs
1.8
nC
Gate-drain charge
Q gd
2.1
nC
Diode forward voltage (1)
V SD
0.87
Reverse recovery time (3)
t rr
Reverse recovery charge (3)
Q rr
V DD =30V, I D =1.2A
R G ≅6.0⍀, V GS =10V
V DS =50V,V GS =5V,
I D =1.2A
V DS =50V,V GS =10V,
I D =1.2A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =3.2A,
V GS =0V
27
ns
32
nC
T J =25°C, I F =1.2A,
di/dt= 100A/␮s
NOTES:
(1) Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
4
ZXMN10A08DN8
TYPICAL CHARACTERISTICS
ISSUE 4 - JANUARY 2005
5
SEMICONDUCTORS
ZXMN10A08DN8
TYPICAL CHARACTERISTICS
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
6
ZXMN10A08DN8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
⍜
0°
8°
0°
8°
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
-
-
-
-
-
1.27 BSC
Min
Max
0.050 BSC
© Zetex Semiconductors plc 2005
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ISSUE 4 - JANUARY 2005
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SEMICONDUCTORS