Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I2094/A SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features 235A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version case style B-8 Maximum junction temperature 125°C Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics Parameters SD233N/R Units 235 A 60 °C 370 A @ 50Hz 5500 A @ 60Hz 5760 A @ 50Hz 151 KA2s @ 60Hz 138 KA2s 3000 to 4500 V 4.5 µs 125 °C -40 to 125 °C IF(AV) @ TC IF(RMS) IFSM I 2t V RRM range trr @ TJ TJ To Order case style B-8 PreviousSeries Datasheet SD233N/R Index Next Data Sheet ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code V RRM max. repetitive peak and off-state voltage V VRSM , maximum non- I RRM max. repetitive peak voltage V TJ = 125°C mA 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 SD233N/R 50 Forward Conduction Parameter SD233N/R Units Max. average forward current 235 A @ Case temperature 60 °C I F(RMS) Max. RMS current 370 A I FSM Max. peak, one-cycle 5500 non-repetitive forward current 5760 I F(AV) Maximum I2t for fusing Maximum I2√t for fusing @ 45°C case temperature No voltage t = 8.3ms reapplied t = 10ms 50% VRRM 4840 t = 8.3ms reapplied Sinusoidal half wave, 151 t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied 107 t = 10ms 50% VRRM 98 t = 8.3ms reapplied A 138 I 2 √t 12 180° conduction, half sine wave. t = 10ms 4630 I 2t Conditions 1510 V F(TO)1 Low level of threshold voltage 1.56 V F(TO) 2 High level of threshold voltage 1.68 r f1 Low level of forward slope resistance 1.64 r f2 High level of forward slope resistance 1.53 V FM Max. forward voltage 3.2 KA2s KA2√s V mΩ V t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. Ipk= 1000A, TJ = 125°C, tp = 400 µs square pulse 2222222222222 Recovery Characteristics Code typical t S50 Test conditions TJ = 25 oC I rr pk di/dt (*) Max. values @ TJ = 125 °C V r t rr Q rr I rr @ 25% IRRM Square Pulse @ 25% IRRM (µs) (A) (A/µs) (V) (µs) (µC) (A) 5.0 1000 100 - 50 4.5 680 240 (*) di/dt = 25A/us @ TJ = 25°C To Order Previous Datasheet Index Next SD233N/R Data SheetSeries Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-repetitive Surge Current To Order Fig. 6 - Maximum Non-repetitive Surge Current Previous Datasheet SD233N/R Series Index Fig. 7 - Forward Voltage Drop Characteristics Next Data Sheet Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 9 - Typical Forward Recovery Characteristics To Order Fig. 10 - Recovery Time Characteristics Fig. 11 - Recovery Charge Characteristics Fig. 12 - Recovery Current Characteristics Previous Datasheet Index Fig. 14 - Frequency Characteristics Fig. 13 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Next SD233N/R Data SheetSeries Fig. 16 - Frequency Characteristics To Order Fig. 18 - Frequency Characteristics Previous Datasheet Index Next Data Sheet SD233N/R Series Thermal and Mechanical Specification Parameter SD233N/R TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case 0.1 RthCS Max. thermal resistance, case to heatsink 0.04 Units °C K/W DC operation Mounting surface, smooth, flat and greased T Mounting torque ± 10% 50 Nm wt Approximate weight 454 g Case style Conditions B-8 Not lubricated threads See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.010 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 Conditions TJ = TJ max. K/W 23 Ordering Information Table Device Code SD 23 3 N 1 2 3 4 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - N = Stud Normal Polarity (Cathode to Stud) 45 S50 5 6 R = Stud Reverse Polarity (Anode to Stud) 5 - Voltage code: Code x 100 = V RRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - P = Stud base B-8 3/4" 16UNF-2A M = Stud base B-8 M24 X 1.5 8 -7 S = Isolated lead with silicone sleeve (Red = Reverse Polarity; Blue = Normal Polarity) T = Threaded Top Terminal 3/8" 24UNF-2A None = Not isolated lead 9 - C = Ceramic housing To Order P S C 7 8 9 PreviousSeries Datasheet SD233N/R Index Next Data Sheet Outlines Table CERAMIC HOUSING 26 (1.023) MAX. 5(0.20) ± 0.3(0.01) 10.5 (0.41) DIA. 12 (0.47) MIN. C.S. 70mm 2 Case Style B-8 All dimensions in millimeters (inches) 38 (1.5) DIA. MAX. 12 SW 45 3/4"-16UNF-2A * * FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX. CERAMIC HOUSING 17 (0.67) DIA. 3/8"-24UNF-2A 38 (1.5) DIA. MAX.2222222222222 Case Style B-8 with top thread terminal 3/8" All dimensions in millimeters (inches) SW 45 3/4"-16UNF-2A * To Order * FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.