Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-670 To Order Previous Datasheet Index Next Data Sheet Bulletin I2071/A SD263C..S50L SERIES Hockey Puk Version FAST RECOVERY DIODES Features 375A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 125°C Typical Applications Snubber diode for GTO case style DO-200AB (B-PUK) High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics Parameters SD263C..S50L Units 375 A 55 °C 408 A @ 50Hz 5500 A @ 60Hz 5760 A 3000 to 4500 V 4.5 µs 125 °C - 40 to 125 °C IF(AV) @ Ths IF(RMS) IFSM V RRM range trr @ TJ TJ D-671 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max. Code peak reverse voltage V repetitive peak rev. voltage V @ TJ = TJ max. 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 Type number SD263C..S50L mA 50 Forward Conduction Parameter I F(AV) SD263C..S50L Max. average forward current Units Conditions 375 (150) A 55 (85) °C Double side (single side) cooled I F(RMS) Max. RMS forward current 725 A @ 25°C heatsink temperature double side cooled I FSM Max. peak, one-cycle forward, 5500 t = 10ms No voltage non-repetitive surge current 5760 t = 8.3ms reapplied t = 10ms 50% VRRM @ Heatsink temperature A 4630 I2 t Maximum I2t for fusing 4850 t = 8.3ms reapplied 151 t = 10ms No voltage 138 KA2s 107 98 I 2 √t Maximum I2√t for fusing KA2√s 1510 V F(TO)1 Low level value of threshold Low level value of forward reapplied t = 0.1 to 10ms, no voltage reapplied 1.64 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. mΩ High level value of forward (I > π x IF(AV)),TJ = TJ max. 1.53 slope resistance V FM t = 8.3ms (I > π x IF(AV)),TJ = TJ max. slope resistance f2 50% VRRM 1.71 voltage r reapplied t = 10ms V V F(TO)2 High level value of threshold f1 t = 8.3ms Max. forward voltage drop 3.20 V I = 1000A, TJ = TJ max, t = 10ms sinusoidal wave pk p Recovery Characteristics Code S50 Test conditions TJ = 25 oC typical t I rr Sinusoidal half wave, Initial TJ = TJ max. (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. 1.56 voltage r 180° conduction, half sine wave pk di/dt (*) Max. values @ TJ = 125 °C V r t Q rr rr I rr @ 25% IRRM Square Pulse @ 25% IRRM (µs) (A) (A/µs) (V) (µs) (µC) (A) 5.0 1000 100 - 50 4.5 680 240 (*) di/dt = 25A/us @ TJ = 25°C D-672 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled D-675 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 9 - Forward Voltage Drop Characteristics Fig. 11 - Typical Forward Recovery Characteristics Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics D-676 To Order Fig. 14 - Recovery Current Characteristics Previous Datasheet Index Next Data Sheet SD263C..S50L Series Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Frequency Characteristics Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 20 - Frequency Characteristics D-677 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series Thermal and Mechanical Specifications Parameter SD263C..S50L TJ Max. junction operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, Units °C 0.11 DC operation single side cooled K/W junction to heatsink 0.05 F Mounting force, ± 10% 9800 N (1000) (Kg) wt Approximate weight 230 g Case style Conditions DC operation double side cooled DO-200AB (B-PUK) See outline table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Single Side Double Side 0.012 0.011 Single Side Double Side 0.008 0.008 Conduction angle 180° Units 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046 Conditions TJ = TJ max. K/W Ordering Information Table Device Code SD 26 3 C 1 2 3 4 45 S50 5 6 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 7 - t rr code L = Puk Case DO-200AB (B-PUK) D-673 To Order L 7 Previous Datasheet Index Next Data Sheet SD263C..S50L Series Outline Table BOTH ENDS 58.5 (2.3 0) D IA . M AX . 3.5(0.14) DIA. NOM. x 1.8(0.07) DEEP MIN. Conforms to JEDEC DO-200AB (B-PUK) All dimensions in millimeters (inches) TWO PLACES 25 .4 (1) 26.9 (1.06) 0.8 (0.03) BOTH ENDS 34 (1.34) DIA. MAX. 53 (2.09) DIA. MAX. Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics D-674 To Order