DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate Ultra Low Profile Package Qualified to AEC-Q101 Standards for High Reliability Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.001 grams • • • • • • Drain DFN1006H4-3 Body Diode S Gate D G Gate Protection Diode ESD protected Source TOP VIEW BOTTOM VIEW Pin Out Configuration EQUIVALENT CIRCUIT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current per element (Note 1) Thermal Characteristics Continuous Pulsed (Note 3) Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range 1. 2. 3. 4. Value Unit VDSS 20 V VGSS ±10 200 250 V ID mA @TA = 25°C unless otherwise specified Total Power Dissipation (Note 1) Notes: Symbol Symbol Value Unit PD 200 mW RθJA 625 °C/W TJ, TSTG -65 to +150 °C Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN2005LP4K Document number: DS30799 Rev. 4 - 2 1 of 4 www.diodes.com March 2009 © Diodes Incorporated DMN2005LP4K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (per element) (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (per element) (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 ±5 V μA μA VGS = 0V, ID = 100μA VDS = 17V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.53 ⎯ 0.9 V 0.9 0.85 1.2 2.4 2.5 1.5 1.7 1.7 3.5 3.5 Ω ⏐Yfs⏐ ⎯ ⎯ ⎯ ⎯ ⎯ 40 ⎯ ⎯ mS VDS = VGS, ID = 100μA VGS = 4V, ID = 10mA VGS = 2.7V, ID = 200mA VGS = 2.5V, ID = 10mA VGS = 1.8V, ID = 200mA VGS = 1.5V, ID = 1mA VDS = 3V, ID = 10mA Ciss Coss Crss ⎯ ⎯ ⎯ 41 13 4.5 ⎯ ⎯ ⎯ pF pF pF VDS = 3V, VGS = 0V f = 1.0MHz Turn-on Time ton ⎯ 14.2 ⎯ Turn-off Time ⎯ 45.7 ⎯ nS toff VDD = 3V, ID = 10 mA, VGS = 0-2.5V Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Time Notes: Test Condition 5. Short duration pulse test used to minimize self-heating effect. 1 2 VGS = 2.0V 1.8 o T A = 25 C ID, DRAIN CURRENT (A) 1.6 VGS =1.8V 1.4 0.1 1.2 1 VGS = 1.6V 0.8 0.01 VGS = 1.4V 0.6 0.4 VGS = 1.2V 0.2 VGS = 1.0V 0 2 1 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 4 0.001 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature DMN2005LP4K Document number: DS30799 Rev. 4 - 2 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current 2 of 4 www.diodes.com March 2009 © Diodes Incorporated DMN2005LP4K 5 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.8 0.6 0.4 0.2 0.1 0.001 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 4 3 2 1 0 0 2 3 4 6 1 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.8 0.6 0.4 0.2 0 |YfS|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage f = 1MHz CT, CAPACITANCE (pF) Ciss Coss Crss ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current DMN2005LP4K Document number: DS30799 Rev. 4 - 2 3 of 4 www.diodes.com March 2009 © Diodes Incorporated DMN2005LP4K Ordering Information (Note 6) Part Number DMN2005LP4K-7 Notes: Case DFN1006H4-3 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DN DN = Product Type Marking Code Dot Denotes Drain Side Package Outline Dimensions A A1 D b1 E e b2 L2 L3 DFN1006H4-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Y Z IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2005LP4K Document number: DS30799 Rev. 4 - 2 4 of 4 www.diodes.com March 2009 © Diodes Incorporated