DMN5L06T Lead-free Green NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · N-Channel MOSFET Low On-Resistance TOP VIEW Very Low Gate Threshold Voltage D Low Input Capacitance Fast Switching Speed B C Low Input/Output Leakage SOT-523 Ultra-Small Surface Mount Package S G Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 Marking: Date Code and Type Code, See Page 2 N 0.45 0.65 0.50 Ordering & Date Code Information: See Page 2 All Dimensions in mm Lead Free By Design/RoHS Compliant (Note 2) A G “Green” Device (Note 3) H Mechanical Data · · · · · · · · K M N Case: SOT-523 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 J L D Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Drain Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) Gate Source EQUIVALENT CIRCUIT Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 50 V Drain-Gate Voltage RGS £ 1.0MW VDGR 50 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 1) Continuous ID 280 mA Drain Current (Note 1) Pulsed IDM 1.5 A Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30721 Rev. 2 - 2 1 of 5 www.diodes.com DMN5L06T ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 50 ¾ ¾ V VGS = 0V, ID = 10mA OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage @ TC = 25°C @ TA = 85°C @ TC = 125°C IDSS ¾ ¾ 0.1 1 500 µA VDS = 50V, VGS = 0V VDS = 20V, VGS = 0V VDS = 50V, VGS = 0V @ TA = 25°C @ TA = 85°C IGSS ¾ ¾ ±20 ±1 nA µA VGS = ±20V, VDS = 0V VGS = ±5V, VDS = 0V VGS(th) 0.49 ¾ 1.2 V VDS = VGS, ID = 250mA RDS (ON) ¾ ¾ 1.6 2.2 W VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance 3 4 On-State Drain Current ID(ON) 0.5 1.0 ¾ A Forward Transconductance ½Yfs½ 200 ¾ ¾ mS VSD 0.5 ¾ 1.4 V Input Capacitance Ciss ¾ ¾ 50 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 5.0 pF Source-Drain Diode Forward Voltage VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS 1.5 1 VGS = 10V 8V 6V 5V 4V 3V 1.2 VDS = 25V, VGS = 0V f = 1.0MHz VDS = 10V Pulsed 8V 10V 6V 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 4V 0.9 3V 0.6 0.3 TA = 150° C 0.1 TA = 125° C TA = 85° C TA = 25° C 0.01 TA = 0° C TA = -25° C TA = -55° C 0 0 1 2 3 4 5 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS30721 Rev. 2 - 2 2 of 5 www.diodes.com 0 2.5 3 1.5 2 1 0.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3.5 DMN5L06T 10 VDS = 10V VGS(th), GATE THRESHOLD VOLTAGE (V) VGS = 10V Pulsed ID = 1mA 0.7 Pulsed TA = 85° C TA = 125° C 0.6 TA = 150° C 0.5 0.4 1 0.3 TA = -55° C TA = 25° C 0.2 TA = 0° C TA = -25° C 0.1 0 -75 -50 -25 25 0 50 75 0.1 0.001 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 8 10 VGS = 5V Pulsed TA = 25° C Pulsed 7 TA = 85° C TA = 125° C 6 TA = 150° C 5 4 1 TA = -55° C TA = 25° C TA = 0° C 3 TA = -25° C 2 ID = 280mA 1 0.1 ID = 140mA 0 1 0.1 0.01 0.001 5 0 10 15 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2.5 1 VGS = 10V Pulsed 2.3 VGS = 0V Pulsed 2.1 1.9 ID = 280mA 1.7 ID = 140mA 1.5 1.3 1.1 0.9 IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT 0.8 TA = 150° C 0.1 TA = 125° C TA = 85° C 0.01 TA = 25° C TA = -25° C 0.7 TA = -55° C 0.5 -50 -25 0 25 50 75 100 0.001 125 150 Tch, CHANNEL TEMPERATURE (° C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature DS30721 Rev. 2 - 2 3 of 5 www.diodes.com 0 1 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage DMN5L06T |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) VGS = 10V 0.1 VGS = 0V 0.01 TA = 25°C Pulsed 0.001 0.5 0 1 TA = -55° C VDS = 10V Pulsed TA = -25° C TA = 0° C 0.1 TA = 25° C TA = 85° C TA = 125° C TA = 150° C 0.01 1 0.01 0.001 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 1 0.1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250 Pd, POWER DISSIPATION (mW) NEW PRODUCT 1 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 11, Derating Curve - Total Ordering Information Notes: (Note 5) Device Packaging Shipping DMN5L06T-7 SOT-523 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30721 Rev. 2 - 2 4 of 5 www.diodes.com DMN5L06T NEW PRODUCT Marking Information K5L = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September K5L YM Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30721 Rev. 2 - 2 5 of 5 www.diodes.com DMN5L06T